Q62702-F1052 [INFINEON]
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage); NPN硅高压晶体管(适用于视频输出级在电视机的高击穿电压低集电极 - 发射极饱和电压)型号: | Q62702-F1052 |
厂家: | Infineon |
描述: | NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage) |
文件: | 总4页 (文件大小:133K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NPN Silicon High-Voltage Transistor
BF 622
● Suitable for video output stages in TV sets
● High breakdown voltage
● Low collector-emitter saturation voltage
● Low capacitance
● Complementary type: BF 623 (PNP)
Package1)
SOT-89
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
BF 622
DA
Q62702-F1052
B
C
E
Maximum Ratings
Parameter
Symbol
Values
250
250
250
5
Unit
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage, RBE = 2.7 kΩ
Emitter-base voltage
Collector current
V
CE0
CB0
CER
EB0
V
V
V
V
IC
50
mA
Peak collector current
I
CM
100
1
Total power dissipation, T
S
= 120 ˚C
P
tot
W
Junction temperature
T
j
150
˚C
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 90
≤ 30
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
BF 622
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V
I
C
= 1 mA
= 10 µA, RBE = 2.7 kΩ
V
V
(BR)CE0
(BR)CER
250
250
–
–
–
–
IC
Collector-base breakdown voltage
= 10 µA
V(BR)CB0
250
–
–
IC
Emitter-base breakdown voltage
= 10 µA
V
(BR)EB0
5
–
–
IE
Collector cutoff current
ICB0
ICER
IEB0
VCB = 200 V
–
–
–
–
100
20
nA
µA
V
CB = 200 V, T
A
= 150 ˚C
Collector cutoff current
µA
V
V
CE = 200 V, RBE = 2.7 kΩ
CE = 200 V, RBE = 2.7 kΩ, T
–
–
–
–
1
50
A
= 150 ˚C
Emitter cutoff current
–
–
–
–
–
10
–
VEB = 5 V
DC current gain1)
= 25 mA, VCE = 20 V
h
FE
50
–
–
IC
Collector-emitter saturation voltage1)
= 10 mA, I = 1 mA
V
V
CEsat
BEsat
0.5
1
V
IC
B
Base-emitter saturation voltage1)
= 10 mA, I = 1 mA
–
IC
B
AC characteristics
Transition frequency
f
T
–
–
100
0.8
–
–
MHz
pF
IC
= 10 mA, VCE = 10 V, f = 20 MHz
Output capacitance
C
obo
VCB = 30 V, f = 1 MHz
1)
Pulse test: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
BF 622
Total power dissipation Ptot = f (T
* Package mounted on epoxy
A
*; TS
)
Output capacitance Cobo = f (VCE
f= 1 MHz
)
Permissible pulse load Ptot max/Ptot DC = f (t
p
)
Transition frequency f
CE = 10 V, f = 20 MHz
T
= f (I )
C
V
Semiconductor Group
3
BF 622
DC current gain hFE = f (I
C
)
Collector current I = f (VBE)
C
V
CE = 20 V
VCE = 20 V
Collector cutoff current ICB0 = f (T )
A
V
CB = 200 V
Semiconductor Group
4
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