Q62702-F1052 [INFINEON]

NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage); NPN硅高压晶体管(适用于视频输出级在电视机的高击穿电压低集电极 - 发射极饱和电压)
Q62702-F1052
型号: Q62702-F1052
厂家: Infineon    Infineon
描述:

NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
NPN硅高压晶体管(适用于视频输出级在电视机的高击穿电压低集电极 - 发射极饱和电压)

晶体 晶体管 电视 高压
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NPN Silicon High-Voltage Transistor  
BF 622  
Suitable for video output stages in TV sets  
High breakdown voltage  
Low collector-emitter saturation voltage  
Low capacitance  
Complementary type: BF 623 (PNP)  
Package1)  
SOT-89  
Type  
Marking  
Ordering Code  
(tape and reel)  
Pin Configuration  
1
2
3
BF 622  
DA  
Q62702-F1052  
B
C
E
Maximum Ratings  
Parameter  
Symbol  
Values  
250  
250  
250  
5
Unit  
Collector-emitter voltage  
Collector-base voltage  
Collector-emitter voltage, RBE = 2.7 k  
Emitter-base voltage  
Collector current  
V
CE0  
CB0  
CER  
EB0  
V
V
V
V
IC  
50  
mA  
Peak collector current  
I
CM  
100  
1
Total power dissipation, T  
S
= 120 ˚C  
P
tot  
W
Junction temperature  
T
j
150  
˚C  
Storage temperature range  
Tstg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient2)  
R
th JA  
th JS  
90  
30  
K/W  
Junction - soldering point  
R
1)  
For detailed information see chapter Package Outlines.  
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.  
2)  
5.91  
Semiconductor Group  
1
BF 622  
Electrical Characteristics  
at T = 25 ˚C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
DC characteristics  
Collector-emitter breakdown voltage  
V
I
C
= 1 mA  
= 10 µA, RBE = 2.7 kΩ  
V
V
(BR)CE0  
(BR)CER  
250  
250  
IC  
Collector-base breakdown voltage  
= 10 µA  
V(BR)CB0  
250  
IC  
Emitter-base breakdown voltage  
= 10 µA  
V
(BR)EB0  
5
IE  
Collector cutoff current  
ICB0  
ICER  
IEB0  
VCB = 200 V  
100  
20  
nA  
µA  
V
CB = 200 V, T  
A
= 150 ˚C  
Collector cutoff current  
µA  
V
V
CE = 200 V, RBE = 2.7 kΩ  
CE = 200 V, RBE = 2.7 k, T  
1
50  
A
= 150 ˚C  
Emitter cutoff current  
10  
VEB = 5 V  
DC current gain1)  
= 25 mA, VCE = 20 V  
h
FE  
50  
IC  
Collector-emitter saturation voltage1)  
= 10 mA, I = 1 mA  
V
V
CEsat  
BEsat  
0.5  
1
V
IC  
B
Base-emitter saturation voltage1)  
= 10 mA, I = 1 mA  
IC  
B
AC characteristics  
Transition frequency  
f
T
100  
0.8  
MHz  
pF  
IC  
= 10 mA, VCE = 10 V, f = 20 MHz  
Output capacitance  
C
obo  
VCB = 30 V, f = 1 MHz  
1)  
Pulse test: t 300 µs, D = 2 %.  
Semiconductor Group  
2
BF 622  
Total power dissipation Ptot = f (T  
* Package mounted on epoxy  
A
*; TS  
)
Output capacitance Cobo = f (VCE  
f= 1 MHz  
)
Permissible pulse load Ptot max/Ptot DC = f (t  
p
)
Transition frequency f  
CE = 10 V, f = 20 MHz  
T
= f (I )  
C
V
Semiconductor Group  
3
BF 622  
DC current gain hFE = f (I  
C
)
Collector current I = f (VBE)  
C
V
CE = 20 V  
VCE = 20 V  
Collector cutoff current ICB0 = f (T )  
A
V
CB = 200 V  
Semiconductor Group  
4

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