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IXFX44N60 [IXYS]

HiPerFET Power MOSFETs; HiPerFET功率MOSFET
IXFX44N60
型号： IXFX44N60
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

HiPerFET Power MOSFETs
HiPerFET功率MOSFET
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HiPerFETTM  
Power MOSFETs  
IXFX 44N60  
IXFK 44N60  
VDSS = 600 V  
ID25 = 44 A  
RDS(on) = 130 mW  
Single MOSFET Die  
trr £ 250 ns  
PLUS 24TM
Symbol  
TestConditions  
MaximumRatings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MW  
600  
600  
V
V
(TAB)  
G
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
D
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
44  
176  
44  
A
A
A
TO-264 AA (IXFK)  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
60  
3
mJ  
J
G
(TAB)  
D
S
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
5
V/ns  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
PD  
TJ  
TC = 25°C  
560  
W
-55 ... +150  
°C  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
Features  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
• Internationalstandardpackages  
• Low RDS (on) HDMOSTM process  
Md  
Mountingtorque  
TO-264  
0.4/6  
Nm/lb.in.  
• Ruggedpolysilicongatecellstructure  
• UnclampedInductiveSwitching(UIS)  
rated  
Weight  
PLUS 247  
TO-264  
6
10  
g
g
• Lowpackageinductance  
- easy to drive and to protect  
• Fastintrinsicrectifier  
Applications  
• DC-DC converters  
• Batterychargers  
• Switched-modeandresonant-mode  
powersupplies  
• DC choppers  
• ACmotorcontrol  
Symbol  
VDSS  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VGS = 0 V, ID = 3mA  
600  
V
• Temperatureandlightingcontrols  
VGS(th)  
IGSS  
VDS = VGS, ID = 8mA  
2.5  
4.5 V  
VGS = ±20 V, VDS = 0  
±100nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
100 mA  
2 mA  
• PLUS 247TM package for clip or spring  
mounting  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Note 1  
130 mW  
• Space savings  
• Highpowerdensity  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98611B(7/00)  
1 - 4  
IXFK 44N60  
IXFX 44N60  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
PLUS247TM (IXFX) Outline  
VDS = 10 V; ID = 0.5 • ID25  
Note 1  
30  
45  
S
Ciss  
Coss  
Crss  
8900  
1000  
330  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
40  
50  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1 W (External),  
100  
40  
Dim.  
Millimeter  
Min. Max. Min. Max.  
Inches  
Qg(on)  
Qgs  
330  
60  
nC  
nC  
nC  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
65  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
RthJC  
RthCK  
0.22 K/W  
K/W  
0.15  
C
D
E
0.61  
0.80  
.024 .031  
.819 .840  
.620 .635  
20.80 21.34  
15.75 16.13  
e
L
L1  
5.45 BSC  
19.81 20.32  
.215 BSC  
.780 .800  
.150 .170  
Source-DrainDiode  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 .244  
.170 .190  
Symbol  
TestConditions  
IS  
VGS = 0 V  
44  
A
A
TO-264 AA (IXFK) Outline  
ISM  
Repetitive;  
176  
pulse width limited by TJM  
VSD  
IF = IS, VGS = 0 V, Note 1  
1.3  
V
trr  
250 ns  
IF = 50A,-di/dt = 100 A/ms, VR = 100 V  
QRM  
IRM  
1.4  
8
mC  
A
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
c
D
E
e
0.53  
25.91 26.16  
19.81 19.96  
5.46 BSC  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
.215 BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 4  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXFK 44N60  
IXFX 44N60  
Figure 1. Output Characteristics at 25OC  
Figure 2. Output Characteristics at 125OC  
80  
100  
TJ = 125OC  
VGS = 10V  
TJ = 25OC  
6V  
5V  
VGS = 10V  
9V  
8V  
7V  
80  
60  
40  
20  
0
9V  
8V  
7V  
6V  
60  
40  
20  
0
5V  
0
4
8
12  
16  
20  
24  
0
4
8
12  
16  
20  
24  
VDS - Volts  
VDS - Volts  
Figure 4. RDS(on) normalized to 15A/25OC vs. TJ  
Figure 3. RDS(on) normalized to 15A/25OC vs. ID  
2.4  
2.4  
VGS = 10V  
VGS = 10V  
TJ = 125OC  
2.0  
2.0  
ID = 44A  
1.6  
1.6  
ID = 22A  
TJ = 25OC  
1.2  
1.2  
0.8  
0.8  
0
20  
40  
60  
80  
100  
25  
50  
75  
100  
125  
150  
ID - Amperes  
TJ - Degrees C  
Figure 5. Drain Current vs. Case Temperature  
Figure 6. Admittance Curves  
60  
50  
40  
30  
20  
10  
0
60  
50  
TJ = 125oC  
40  
30  
20  
10  
0
TJ = 25oC  
-50 -25  
0
25 50 75 100 125 150  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
TC - Degrees C  
VGS - Volts  
© 2000 IXYS All rights reserved  
3 - 4  
IXFK 44N60  
IXFX 44N60  
Figure 7. Gate Charge  
Figure 8. Capacitance Curves  
12  
10000  
Ciss  
VDS = 300V  
ID = 30A  
IG = 10mA  
f = 1MHz  
10  
8
Coss  
6
1000  
100  
4
Crss  
2
0
0
50 100 150 200 250 300 350 400  
0
5
10 15 20 25 30 35 40  
Gate Charge - nC  
VDS - Volts  
Figure 9. Forward Voltage Drop of the Intrinsic Diode  
100  
80  
TJ = 125OC  
60  
TJ = 25OC  
40  
20  
0
0.2  
0.4  
0.6  
VSD - Volts  
Figure 10. Transient Thermal Resistance  
0.8  
1.0  
1.2  
1.00  
0.10  
0.01  
0.00  
10-4  
10-3  
10-2  
10-1  
100  
101  
Pulse Width - Seconds  
© 2000 IXYS All rights reserved  
4 - 4  

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