IXGA20N120A3 [IXYS]
GenX3 1200V IGBTs; GenX3 1200V的IGBT
| 型号： | IXGA20N120A3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GenX3 1200V IGBTs |
| 文件： | 总6页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GenX3TM 1200V IGBTs
VCES = 1200V
IC110 = 20A
VCE(sat) ≤ 2.5V
IXGA20N120A3
IXGP20N120A3
IXGH20N120A3
Ultra-Low Vsat PT IGBTs for
up to 3 kHz Switching
TO-263 AA (IXGA)
G
E
C (Tab)
Symbol
Test Conditions
Maximum Ratings
TO-220AB (IXGP)
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
1200
1200
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
C (Tab)
E
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
40
20
A
A
A
TO-247 (IXGH)
120
SSOA
(RBSOA)
VGE= 15V, TJ = 125°C, RG = 10Ω
Clamped Inductive Load
ICM = 40
A
V
@VCE ≤ 960
PC
TC = 25°C
180
W
G
C
E
TJ
TJM
Tstg
-55 ... +150
150
°C
°C
°C
C (Tab)
-55 ... +150
G = Gate
C
= Collector
E = Emitter
Tab = Collector
Md
FC
Mounting Torque (TO-247 & TO-220)
Mounting Force (TO-263)
1.13/10
10..65 / 2.2..14.6
Nm/lb.in.
N/lb.
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
300
260
°C
°C
Features
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
g
g
g
z Optimized for Low Conduction Losses
z International Standard Packages
Advantages
z High Power Density
z Low Gate Drive Requirement
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
1200
2.5
Typ.
Max.
Applications
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
VCE = VCES, VGE = 0V
V
z Power Inverters
z UPS
5.0
V
25 μA
z Motor Drives
z SMPS
TJ = 125°C
TJ = 125°C
1
±100
2.5
mA
nA
z PFC Circuits
IGES
VCE = 0V, VGE = ±20V
z Battery Chargers
z Welding Machines
z Lamp Ballasts
z Inrush Current Protection Circuits
VCE(sat)
IC = 20A, VGE = 15V, Note 1
2.3
2.5
V
V
DS100046A(11/09)
© 2009 IXYS CORPORATION, All Rights Reserved
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
Symbol
Test Conditions
Characteristic Values
TO-247 (IXGH) AD Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = 20A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
7
12
S
Cies
Coes
Cres
1075
80
pF
pF
pF
27
Qg
50
7.3
23
nC
nC
nC
Qge
Qgc
IC = 20A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
16
44
ns
ns
mJ
ns
ns
Inductive Load, TJ = 25°C
IC = 20A, VGE = 15V
2.85
290
715
1 = Gate
VCE = 960V, RG = 10Ω
Note 2
2 = Collector
3 = Emitter
Tab = Collector
Eoff
6.47
mJ
td(on)
tri
16
50
ns
ns
Inductive Load, TJ = 125°C
IC = 20A, VGE = 15V
Eon
td(off)
tfi
5.53
310
mJ
ns
VCE = 960V, RG = 10Ω
Note 2
1220
10.10
ns
Eoff
mJ
RthJC
RthCK
0.69 °C/W
TO-220
TO-247
0.50
0.21
°C/W
°C/W
TO-220 (IXGP) Outline
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
TO-263 (IXGA) Outline
Pins: 1 - Gate
3 - Emitter
2 - Collector
4 - Collector
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
40
35
30
25
20
15
10
5
140
120
100
80
VGE = 15V
VGE = 15V
13V
11V
13V
9V
11V
60
7V
5V
9V
40
20
7V
0
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
15
0
4
8
12
16
20
24
28
32
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
40
35
30
25
20
15
10
5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGE = 15V
VGE = 15V
13V
11V
I C = 40A
9V
7V
I C = 20A
I C = 10A
5V
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
-50
-25
0
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
45
40
35
30
25
20
15
10
5
7.5
6.5
5.5
4.5
3.5
2.5
1.5
TJ = 25ºC
TJ = - 40ºC
25ºC
125ºC
I C = 40A
20A
10A
0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
5
6
7
8
9
10
11
12
13
14
VGE - Volts
VGE - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
Fig. 8. Gate Charge
Fig. 7. Transconductance
16
14
12
10
8
16
14
12
10
8
TJ = - 40ºC
VCE = 600V
I C = 20A
I
G = 10 mA
25ºC
125ºC
6
6
4
4
2
2
0
0
0
5
10
15
20
25
30
35
40
45
0
5
10
15
20
25
30
35
40
45
50
QG - NanoCoulombs
IC - Amperes
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
45
40
35
30
25
20
15
10
5
10,000
1,000
100
= 1MHz
f
C
ies
C
oes
TJ = 125ºC
G = 10Ω
dv / dt < 10V / ns
R
C
res
0
10
200
300
400
500
600
700
800
900
1000 1100 1200
0
5
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
Fig. 12. Inductive Switching Energy Loss
vs. Gate Resistance
Fig. 13. Inductive Switching Energy Loss
vs. Collector Current
24
22
20
18
16
14
12
10
8
12
26
24
22
20
18
16
14
12
10
8
20
18
16
14
12
10
8
11
E
E
on - - - -
E
E
on - - - -
off
RG = 10
off
VGE = 15V
Ω ,
VCE = 960V
TJ = 125ºC , VGE = 15V
VCE = 960V
10
9
8
I C = 40A
TJ = 125ºC
7
6
TJ = 25ºC
5
I C = 20A
6
4
4
6
3
4
2
2
20
22
24
26
28
30
32
34
36
38
40
10
15
20
25
30
35
40
45
50
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss
vs. Junction Temperature
Fig. 15. Inductive Turn-off Switching Times
vs. Gate Resistance
22
20
18
16
14
12
10
8
11
10
9
1700
1600
1500
1400
1300
1200
1100
1000
900
700
650
600
550
500
450
400
350
300
250
200
150
E
E
on - - - -
off
t f i
td(off)
- - - -
V
GE = 15V
RG = 10Ω VGE = 15V
,
TJ = 125ºC,
VCE = 960V
CE = 960V
V
8
I C = 20A
7
I C = 40A
6
5
4
I C = 40A
I C = 20A
6
3
800
4
2
700
600
2
1
10
15
20
25
30
35
40
45
50
25
35
45
55
65
75
85
95
105
115
125
RG - Ohms
TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off Switching Times
vs. Collector Current
Fig. 17. Inductive Turn-off Switching Times
vs. Junction Temperature
1400
1300
1200
1100
1000
900
350
340
330
320
310
300
290
280
270
1400
1300
1200
1100
1000
900
360
t f i
td(off) - - - -
t f i
td(off)
- - - -
350
340
330
320
310
300
290
280
RG = 10Ω , VGE = 15V
RG = 10Ω , VGE = 15V
VCE = 960V
VCE = 960V
TJ = 125ºC
I
= 40A
C
I C = 20A
TJ = 25ºC
800
800
700
700
600
600
25
35
45
55
65
75
85
95
105
115
125
20
22
24
26
28
30
32
34
36
38
40
TJ - Degrees Centigrade
IC - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
Fig. 19. Inductive Turn-on Switching Times
Fig. 18. Inductive Turn-on Switching Times
vs. Gate Resistance
vs. Collector Current
200
180
160
140
120
100
80
55
50
45
40
35
30
25
20
15
10
5
160
140
120
100
80
23
tr i
td(on) - - - -
tr i
td(on)
- - - -
22
21
20
19
18
17
16
15
RG = 10Ω , VGE = 15V
TJ = 125ºC, VGE = 15V
VCE = 960V
VCE = 960V
I C = 40A
TJ = 125ºC
TJ = 25ºC
60
I C = 20A
60
40
40
20
20
0
0
10
15
20
25
30
35
40
45
50
20
22
24
26
28
30
32
34
36
38
40
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times
vs. Junction Temperature
160
140
120
100
80
28
26
24
22
20
18
16
14
t r i
td(on)
- - - -
RG = 10Ω , VGE = 15V
VCE = 960V
I C = 40A
60
40
I C = 20A
20
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_20N120A3(4L)10-01-08
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