KI4980DY [KEXIN]
Dual N-Channel 80-V (D-S) MOSFET; 双N通道80 -V （D -S ）的MOSFET
| 型号： | KI4980DY |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Dual N-Channel 80-V (D-S) MOSFET |
| 文件： | 总2页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
IC
Dual N-Channel 80-V (D-S) MOSFET
KI4980DY
Features
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Symbol
VDS
Rating
80
Unit
V
Gate-Source Voltage
VGS
20
3.7
Continuous Drain Current (TJ = 150 )*
TA = 25
TA = 70
ID
A
2.9
Pulsed Drain Current
IDM
IS
30
Continuous Source Current (Diode Conduction) *
TA = 25
TA = 70
1.7
A
2.0
Maximum Power Dissipation *
PD
W
1.3
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient*
TJ, Tstg
RthJA
-55 to 150
62.5
/W
* Surface Mounted on FR4 Board, t
10 sec.
1
www.kexin.com.cn
SMD Type
IC
KI4980DY
Electrical Characteristics Ta = 25
Parameter
Gate Threshold Voltage
Gate-Body Leakage
Symbol
VGS(th) VDS = VGS, ID = 250 ìA
IGSS
Testconditons
Min
2
Typ
Max
Unit
V
nA
VDS = 0 V, VGS = 20 V
VDS = 80 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 55
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID =3.7 A
VGS = 6.0 V, ID = 3.2 A
VDS = 15 V, ID = 3.7 A
IS = 1.7 A, VGS = 0 V
100
1
Zero Gate Voltage Drain Current
On-State Drain Current *
IDSS
ID(on)
rDS(on)
A
A
20
20
0.062
0.071
12
0.075
0.095
Drain-Source On-State Resistance*
Forward Transconductance*
Schottky Diode Forward Voltage*
Total Gate Charge
gfs
VSD
Qg
S
1.2
30
V
15
4
nC
nC
nC
VDS = 40 V, VGS = 10V, ID = 3.7 A
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Rg
3.2
Gate Resistance
5.1
20
Turn-On Delay Time
Rise Time
td(on)
tr
10
10
30
10
75
ns
ns
ns
ns
ns
20
VDD = 40 V, RL = 40
Turn-Off Delay Time
Fall Time
td(off)
tf
ID = 1 A, VGEN = 10 V, RG = 6 Ù
60
20
Source-Drain Reverse Recovery Time
trr
110
IF = 1.7 A, di/dt = 100 A/
s
* Pulse test; pulse width
300 s, duty cycle
2 %.
2
www.kexin.com.cn
相关型号：
©2020 ICPDF网 联系我们和版权申明