NTE224 [NTE]
Silicon NPN Transistor Final RF Power Output for CB PO = 4W, 50MHz; 硅NPN晶体管最终RF输出功率为CB PO = 4W , 50MHz的型号: | NTE224 |
厂家: | NTE ELECTRONICS |
描述: | Silicon NPN Transistor Final RF Power Output for CB PO = 4W, 50MHz |
文件: | 总2页 (文件大小:55K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NTE224
Silicon NPN Transistor
Final RF Power Output for CB
PO = 4W, 50MHz
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector−Emitter Voltage (RBE = 10Ω), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Emitter Current, IE
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −2A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −4A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +175°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
DC Current Gain
Symbol
ICBO
Test Conditions
VCB = 30V, IE = 0
VCE = 5V, IC = 500mA
Min Typ Max Unit
−
10
−
−
30
−
10
140
1.0
1.2
−
µA
hFE
Collector−Emitter Saturation Voltage
Base−Emitter Voltage
Transition Frequency
VCE(sat) IC = 500mA, IB = 100mA
V
V
VBE
fT
CE = 5V, IC = 500mA
−
−
VCE = 10V, IE = −200mA
VBE = 10V, IE = 0, f = 1MHz
150 300
MHz
pF
W
Collector Output Capacitance
Output Power
Cob
PO
−
25
5
50
−
VCC = 12V, f = 50MHz,
Pin = 0.4W, η = 60%
4
.370 (9.39) Dia Max
.315
(8.0)
.065 (1.68)
.143 (3.65) Min
.019 (0.48) Dia
Collector/Case
Base
Emitter
.500
(12.7)
.190 (4.82)
.630 (16.0)
1.000 (25.4)
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