NTE226 [NTE]
Germanium PNP Transistor Audio Power Amp; 锗PNP晶体管音频功率放大器
| 型号： | NTE226 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Germanium PNP Transistor Audio Power Amp |
| 文件： | 总2页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE226
Germanium PNP Transistor
Audio Power Amp
Description:
The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high–
power output applications.
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Collector–Emitter Voltage (RBE = 100Ω), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +85°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +85°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
hFE
Test Conditions
VCB = 25V, IE = 0
Min Typ Max Unit
–
–
–
–
200 µA
200 µA
VEB = 6V, IC = 0
DC Current Gain
VCE = 1.5V, IC = 200mA
VCE = 1.5V, IC = 200mA
VCE = 1.5V, IC = 200mA, f = 6MHz
50 100 275
Small–Signal Current Gain Resistance
Base Spreading Resistance
fob
–
–
0.7
15
–
–
MHz
rbb
Ω
.593 (15.08)
Dia
.290 (7.36)
.031
(.792)
.295 (7.5)
.039 (1.0) Dia
.944 (24.0)
Base
.530 (13.5)
.157 (4.0)
Dia
(2 Places)
.315
(8.0)
Collector/Case
Emitter
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