NTE22 [NTE]
Silicon NPN Transistor AF PO, General Purpose Amp, Driver; 硅NPN晶体管AF PO，通用放大器，驱动器
| 型号： | NTE22 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon NPN Transistor AF PO, General Purpose Amp, Driver |
| 文件： | 总2页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE22
Silicon NPN Transistor
AF PO, General Purpose Amp, Driver
Features:
D High Breakdown Voltage: VCEO = 80V
D Large IC Capacity: IC = 1A DC
D Good hFE Linearity
D Low Collector Saturation Voltage
Applications:
D Medium Power Output Stages
D High–Voltage Drivers
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Pulse (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW
Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +135°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Note 1. PW = 20ms, Duty Cycle = 1/2
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Symbol
Test Conditions
I = 1mA
Min
80
100
5
Typ Max Unit
V
–
–
–
–
V
V
(BR)CEO
(BR)CBO
C
V
I = 50µA
C
V
I = 50µA
E
–
–
V
(BR)EBO
I
V
CB
V
EB
V
CE
= 80V
= 4V
–
–
1
µA
µA
CBO
Emitter Cutoff Current
I
–
–
1
EBO
DC Current Gain
h
FE
= 3V, I = 50mA
120
–
–
270
0.4
–
C
Collector Saturation Voltage
Transition Frequency
V
CE(sat)
I = 500A, I = 50mA
0.15
100
20
V
C
B
f
T
V
= 10V, I = 50mA
–
MHz
pF
CE
CB
C
Output Capacitance
C
ob
V
= 10V, f = 1MHz
–
–
.102 (2.6)
.280 (7.11)
.185 (4.7)
E
C B
.100 (2.54)
.051 (1.29)
.138 (3.5)
.022 (0.55)
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