NTE221 [NTE]
MOSFET Dual Gate, N-Channel for VHF TV Receivers Applications; MOSFET双栅， N沟道的VHF电视接收器的应用
| 型号： | NTE221 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | MOSFET Dual Gate, N-Channel for VHF TV Receivers Applications |
| 文件： | 总2页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE221
MOSFET
Dual Gate, N–Channel for
VHF TV Receivers Applications
Description:
The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes
MOS construction. This device has characteristics which makes it highly desirable for use in RF–am-
plifier applications.
Features:
D Extremely Low Feedback Capacitance
D High Power Gain
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain–to–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +20V
Gate 1–to–Source Voltage, VG1S
Continuous (DC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1V to –8V
Peak AC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V to –8V
Gate 2–to–Source Voltage, VG2S
Continuous (DC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –8V to 40% of VDS
Peak AC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –8V to +20V
Drain–to–Gate Voltage, VDG1 or VDG2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
Pulsed Drain Current (Note 1), ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Transistor Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.67mW/°C
Operating Ambient Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Lead Temperature (During Soldering, 1/32” from seating surface, 10sec max), TL . . . . . . . . +265°C
Note 1. Pulse test: Pulse Width ≤ 20ms, Duty Cycle ≤ 15%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
–
Typ Max
Unit
V
Gate 1–to–Source Cutoff Voltage
Gate 2–to–Source Cutoff Voltage
Gate 1 Leakage Current
V (off) V = 15V, V
G1S
= 4V, I = 200mA
–2
–2
–
–
–
1
1
DS
G2S
G1S
D
V (off) V = 15V, V
G2S
= 0, I = 200mA
–
V
DS
D
I
I
V
= 20V, V
= 0, V = 0
–
nA
nA
G1SS
G2SS
G1S
G2S
G2S
G1S
DS
Gate 2 Leakage Current
V
= 20V, V
= 0, V = 0
–
–
DS
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Drain Current
Forward Transconductance
Symbol
Test Conditions
= 13V, V = 0, V = 4V
G2S
Min
Typ Max
Unit
mA
I
V
V
–
18
–
–
DSS
DS
G1S
g
fs
= 13V, I = 10mA, V = 4V,
G2S
–
1000
µmhos
DS
D
f = 1kHz
Performance Characteristics: (TA = +25°C, f = 200MHz, Note 2 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Small–Signal, Short Circuit Reverse
C
rss
(Drain–to–Gate 1) at f = 1MHz
–
0.02 0.03
pF
Transfer Capacitance
Output Capacitance
C
–
–
–
–
–
–
–
–
2.2
5.5
–
–
–
–
–
–
–
–
pF
pF
oss
Input Capacitance
C
iss
iss
Input Resistance
r
1.2
kΩ
Output Resistance
r
2.8
kΩ
oss
Magnitude of Forward Transconductance
Phase Angle of Forward Transadmittance
Maximum Available Power Gain
|Y |
11000
–46
20
µmhos
deg
dB
fs
MAG
Maximum Usable Power Gain
(Unneutralized)
MUG
Note 3
20
dB
u
Power Gain
Noise Figure
G
–
–
17.5
–
dB
dB
PS
NF
–
5
Note 2. VG1S is adjusted for ID = 10mA, Gate 2 at AC ground potential, VDS = 13V, VG2S = 4V.
Note 3. Limited by practical design considerations.
.220 (5.58) Dia
.185 (4.7) Dia
.190
(4.82)
.030 (.762)
.500
(12.7)
Min
.018 (0.45) Dia
Gate 2
Drain
Gate 1
45°
Source/Case
.040 (1.02)
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