NTE222 [NTE]
Field Effect Transistor Dual Gate N-Channel MOSFET; 场效应晶体管双栅N沟道MOSFET
| 型号： | NTE222 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Field Effect Transistor Dual Gate N-Channel MOSFET |
| 文件： | 总2页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE222
Field Effect Transistor
Dual Gate N–Channel MOSFET
Absolute Maximum Ratings:
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Reverse Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10mA
Forward Gate Current, IGF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Lead Temperature (During Soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max
Unit
OFF Characteristics
Drain–Source Breakdown Voltage
Gate 1–Source Breakdown Voltage
Gate 2–Source Breakdown Voltage
Gate 1 Leakage Current
V
I = 10µA, V = V = –5V
25
±6
–
–
–
–
–
–
–
–
V
V
(BR)DSX
D
G1
G2
V
V
I
= ±10mA, Note 1
= ±10mA, Note 1
±30
±30
±10
±10
–4.0
–4.0
(BR)G1SO G1
I
±6
V
(BR)G2SO G2
I
V
V
V
V
= ±5V, V
= ±5V, V
= V = 0
–
nA
nA
V
G1SS
G1S
G2S
G2S
G1S
DS
Gate 2 Leakage Current
I
= V = 0
–
G2SS
DS
Gate 1 to Source Cutoff Voltage
Gate 2 to Source Cutoff Voltage
ON Characteristics (Note 2)
Zero–Gate–Voltage Drain Current
Small–Signal Characteristics
Forward Transfer Admittance
V
= 15V, V
= 4V, I = 20µA
–0.5
–0.2
G1S(off)
G2S(off)
DS
DS
G2S
G1S
D
V
= 15V, V
= 0V, I = 20µA
V
D
I
V
= 15V, V
= 15V, V
= 4V, V
= 0V
= 0V,
6
–
–
30
22
mA
DSS
DS
G2S
G1S
G1S
|Y |
fs
V
DS
= 4V, V
10
mmhos
G2S
f = 1kHz, Note 3
Note 1. All gated breakdown voltages are measured while the device is conducting rated gate cur-
rent. This insures that the gate voltage limiting network is functioning properly.
Note 2. Pulse Test: Pulse Width = 30µs, Duty Cycle ≤ 2%.
Note 3. This parameter must be measured with bias voltages applied for less than five (5) seconds
to avoid overheating.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max
Unit
Small–Signal Characteristics (Cont’d)
Input Capacitance
C
V
= 15V, V
= 4V, I = I ,
DSS
–
3.3
–
–
0.03
–
pF
pF
pF
iss
rss
oss
DS
G2S
G2S
G2S
D
f = 1MHz
Reverse Transfer Capacitance
Output Capacitance
C
V
DS
= 15V, V
= 4V, I = 10mA, 0.005
D
f = 1MHz
C
V
DS
= 15V, V
= 4V, I = I ,
DSS
–
1.4
D
f = 1MHz
Functional Characteristics
Noise Figure
NF
V
V
= 18V, V
= 15V, V
= 7V, f = 200MHz
–
–
–
–
3.5
5.0
dB
dB
DD
GG
= 4V, I = 10mA,
DD
G2S
D
f = 200MHz
Common Source Power Gain
Bandwidth
G
V
V
= 18V, V
= 15V, V
= 7V, f = 200MHz
20
14
–
–
28
dB
dB
ps
DD
GG
= 4V, I = 10mA,
–
DD
G2S
D
f = 200MHz
BW
V
V
= 18V, V
= 7V, f = 200MHz
7
4
–
–
12
7
MHz
MHz
DD
GG
= 18V, f = 245MHz,
DD
LO
f
= 200MHz, Note 5
RF
Gain Contol Gate–Supply Voltage
V
V
= 18V, ∆G = 300dB,
0
–
–2.0
V
GG(GC)
DD
ps
f = 200MHz, Note 4
Note 4. ∆Gps is defined as the change in Gps from the value at VGG = 7V.
Note 5. Amplitude at input from local oscillator is 3V RMS.
.220 (5.58) Dia
.185 (4.7) Dia
.190
(4.82)
.030 (.762)
.500
(12.7)
Min
.018 (0.45) Dia
Gate 2
Drain
Gate 1
45°
Source/Case
.040 (1.02)
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