NTMFSC004N08MC [ONSEMI]
N-Channel Dual CoolTM 56 PowerTrench® MOSFET 80V, ___A, 4.0mΩ;
| 型号： | NTMFSC004N08MC |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Dual CoolTM 56 PowerTrench® MOSFET 80V, ___A, 4.0mΩ |
| 文件： | 总7页 (文件大小：387K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Power, Single
N-Channel, DUAL COOL),
DFN8
V
R
MAX
I MAX
D
SSS
SS(ON)
4.0 mW @ 10 V
8.5 mW @ 6 V
80 V
136 A
80 V, 4.0 mW, 136 A
N−Channel MOSFET
NTMFSC004N08MC
S
S
S
1
8
D
D
D
Features
2
3
7
6
• Advanced Dual−Sided Cooled Packaging
• Ultra Low R
to Minimize Conduction Losses
DS(on)
• MSL1 Robust Packaging Design
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
G
4
5
D
Typical Applications
• Orring FET/Load Switching
• Synchronous Rectifier
• DC−DC Conversion
MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
J
DFN8 5x6.15
CASE 506EG
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
20
V
MARKING DIAGRAM
Continuous Drain
Current R
I
136
A
D
q
JC
Steady
State
(Note 2)
3FAYWZ
T
= 25°C
C
Power Dissipation
P
127
80
W
A
D
R
(Note 2)
q
JC
Continuous Drain
Current R
I
D
q
JA
Steady
State
(Note 1, 2)
T = 25°C
A
3F
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
Power Dissipation
P
3.2
W
D
R
(Note 1, 2)
A
Y
W
Z
q
JA
Pulsed Drain Current
T = 25°C, t = 10 ms
A
I
DM
487
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+150
°C
J
stg
Source Current (Body Diode)
I
157
178
A
S
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I = 55 A, L = 0.1 mH)
AV
Lead Temperature Soldering Reflow for Sol-
dering Purposes (1/8″ from case for 10 s)
T
L
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface−mounted on FR4 board using 1 in pad size, 1 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
January, 2023 − Rev. 4
NTMFSC004N08MC/D
NTMFSC004N08MC
THERMAL CHARACTERISTICS
Symbol
Parameter
Max
0.98
1.49
39
Unit
Junction−to−Case – Steady State
Junction−to−Case Top – Steady State
Junction−to−Ambient – Steady State (Note 1)
°C/W
R
q
JC
R
R
q
JT
q
JA
ORDERING INFORMATION
Device
†
Device Marking
Package
Shipping
NTMFSC004N08MC
4N08MC
DFN8 5x6.15
(Pb−Free/Halogen Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain*to*Source Breakdown Voltage
V
V
= 0 V, I = 250 mA
80
V
(BR)DSS
GS
D
Drain*to*Source Breakdown Voltage
V
/ T
0.05
mV/°C
(BR)DSS
J
I
D
= 250 mA, ref to 25°C
Temperature Coefficient
Zero Gate Voltage Drain Current
I
T = 25°C
10
mA
DSS
J
V
GS
= 0 V, V = 80 V
DS
T = 125°C
J
250
100
Gate*to*Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
DS
= 0 V, V =
GS
20 V
nA
GSS
V
V
GS
= V , I = 250 mA
2.0
2.9
4.0
V
GS(TH)
DS
D
V
/ T
Negative Threshold Temperature
Coefficient
−6.5
mV/°C
GS(TH)
J
I
D
= 250 mA, ref to 25°C
R
Drain*to*Source On Resistance
V
= 10 V, I = 44 A
3.1
5.0
1.3
4.0
8.5
mW
W
DS(on)
GS
D
V
= 6 V, I = 22 A
D
GS
Gate−Resistance
R
T = 25°C
A
G
CHARGES & CAPACITANCES
Input Capacitance
C
2980
950
50
pF
ISS
C
C
Output Capacitance
V
= 0 V, f = 1 MHz, V = 40 V
DS
OSS
RSS
GS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
= 6 V, V = 40 V, I = 22 A
27.8
43.4
15
nC
ns
V
G(TOT)
G(TOT)
GS
DS
D
Q
Total Gate Charge
Q
Gate−to−Source Charge
Gate−to−Drain Charge
V
GS
= 10 V, V = 40 V, I = 22 A
DS D
GS
Q
7
GD
SWITCHING CHARACTERISTICS (Note 3)
Turn*On Delay Time
Rise Time
t
d(ON)
11.7
21.5
28.7
5.4
t
r
V
GS
= 10 V, V = 40 V,
DS
D G
t
I = 44 A, R = 2.5 W
Turn*Off Delay Time
Fall Time
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
0.83
0.69
44
1.30
T = 25°C
J
SD
J
V
GS
= 0 V, I = 44 A
S
T = 125°C
Reverse Recovery Time
t
ns
RR
V
= 0 V, dI /dt = 100 A/ms,
GS
S
I
= 44 A
Reverse Recovery Charge
Q
S
50
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTMFSC004N08MC
TYPICAL CHARACTERISTICS
300
250
200
150
100
50
300
TJ=25C
VDS=5
250
200
150
100
VG=5.00
VG=5.50
VG=6.00
50
VG=7.00
VG=8.00
TEMP=−55.00
TEMP=25.00
TEMP=150.00
VG=10.00
0
0
0
2
4
6
8
10
0
2
4
6
8
10
VDS ,Drain to Source Voltage(V)
VGS,Gate to Source Voltage(V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
80
70
60
50
40
30
20
10
35
30
25
20
15
10
5
=25C
TJ
I
TJ
D =44.7
=25C
VG =10.00
VG
=6.00
2
0
2
0
5
6
7
8
9
10
0
20
40
60
80
100 120 140 160 180
VGS,Gate to Source Voltage(V)
ID,Drain Current(A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
6
5.5
5
1e−08
=44.7
=10V
ID
VGS
VGS =0V
TJ =25C
f=1e6Hz
4.5
4
1e−09
3.5
3
1e−10
1e−11
2.5
2
ciss
coss
crss
1.5
−100
−50
0
50
100
150
0.01
0.1
1
10
100
TJ ,Junction Temperature(C)
VDS ,Drain to Source Voltage(V)
Figure 5. On−Resistance Variation with
Figure 6. Capacitance Variation
Temperature
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3
NTMFSC004N08MC
TYPICAL CHARACTERISTICS
12
10
8
1e−06
V
GS=10
=22.4
ID
VDS=64.0
ID=45
1e−07
1e−08
1e−09
6
4
VD=30.00
VD=40.00
tdon
tdoff
tr
2
V
D=50.00
tf
0
1
10
100
0
5
10
15
20
25
30
35
40
45
50
RG,Gate Resistance(Ohm)
QG,Gate Charge(nC)
Figure 7. Gate−to−Source Voltage vs. Total
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
Charge
1e+04
1000
100
1000
100
10
VGS=0
10
2
1
0.1
0.01
2
1
0.001
0.0001
pulseDuration=10u
pulseDuration=100u
pulseDuration=1m
pulseDuration=10m
pulseDuration=100m
TEMP=150.00
TEMP=25.00
1e−05
1e−06
TEMP=−55.00
0.1
0
0.2
0.4
0.6
0.8
1
1.2
0.1
1
10
100
VSD,Body Diode Forward Voltage(V)
VDS ,Drain to Source Voltage(V)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
1000
100
10
120
100
80
TJ =25C
temp=25.00
temp=100.00
temp=125.00
V
DS =5V
60
40
2
1
20
0.1
0
0
1e−06
1e−05
0.0001
0.001
5
10
15
20
25
30
35
40
45
tAV ,TIME IN AVALANCHE(s)
ID (A)
Figure 11. IPEAK vs. Time in Avalanche
Figure 12. GFS vs. ID
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4
NTMFSC004N08MC
TYPICAL CHARACTERISTICS
140
120
100
80
2
D=0 is Single Pulse
1
60
0.1
D=0.00
D=0.01
D=0.02
D=0.05
D=0.10
D=0.20
D=0.50
40
20
0
0.01
20
40
60
80
100
120
140
160
1e−06 1e−05 0.0001 0.001
0.01
0.1
1
10
TC,Case Temperature(C)
t,Rectangular Pulse Duration(sec)
Figure 13. Maximum Current vs. Case
Temperature
Figure 14. Thermal Response
DUAL COOL is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN8 5x6.15, 1.27P, DUAL COOL
CASE 506EG
ISSUE D
DATE 25 AUG 2020
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXX
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Location
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84257G
DFN8 5x6.15, 1.27P, DUAL COOL
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2018
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