ES6U2 [ROHM]
1.5V Drive Nch+SBD MOSFET; 1.5V驱动N沟道+ SBD MOSFET型号: | ES6U2 |
厂家: | ROHM |
描述: | 1.5V Drive Nch+SBD MOSFET |
文件: | 总6页 (文件大小:231K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1.5V Drive Nch+SBD MOSFET
ES6U2
zStructure
zDimensions (Unit : mm)
Silicon N-channel MOSFET /
Schottky barrier diode
WEMT6
(6) (5) (4)
zFeatures
1) Nch MOSFET and schottky barrier diode
are put in WEMT6 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (1.5V drive).
4) Built-in Low VF schottky barrier diode.
(1) (2) (3)
Abbriviated symbol : U02
zApplications
zInner circuit
Switching
(6)
(4)
(5)
zPackage specifications
Package
Taping
T2R
Type
Code
∗2
Basic ordering unit (pieces)
8000
(1)Gate
ES6U2
(2)Source
(3)Anode
(4)Cathode
(5)Drain
∗1
(1)
(2)
(3)
∗1 ESD protection diode
∗2 Body diode
(6)Drain
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Symbol
Limits
20
Unit
VDSS
VGSS
ID
V
10
Gate-source voltage
V
Continuous
Pulsed
1.5
3.0
0.5
3.0
A
Drain current
∗1
∗1
IDP
A
Source current
(Body diode)
Continuous
Pulsed
IS
A
ISP
A
°C
Channel temperature
Power dissipation
Tch
PD
150
0.7
∗2
W / ELEMENT
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
<Di>
Parameter
Symbol
VRM
VR
Limits
25
Unit
Repetitive peak reverse voltage
Reverse voltage
V
20
V
0.5
2.0
IF
Forward current
A
∗1
IFSM
Forward current surge peak
Junction temperature
Power dissipation
A
°C
Tj
PD
150
0.5
∗2
W / ELEMENT
∗1 60Hz 1cyc.
∗2 Mounted on ceramic board
<MOSFET and Di>
Parameter
Symbol
Limits
0.8
Unit
W / TOTAL
°C
∗
Power dissipation
PD
Range of storage temperature
∗ Mounted on a ceramic board
Tstg
−55 to +150
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2009.12 - Rev.A
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c
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ES6U2
Data Sheet
zElectrical characteristics (Ta=25°C)
<MOSFET>
Parameter
Symbol Min. Typ. Max.
Conditions
µA VGS= 10V, VDS=0V
Unit
Gate-source leakage
IGSS
−
−
−
10
−
Drain-source breakdown voltage V(BR) DSS 20
V
µA
V
ID= 1mA, VGS=0V
Zero gate voltage drain current
Gate threshold voltage
IDSS
−
0.3
−
−
−
−
−
1
VDS= 20V, VGS=0V
DS= 10V, ID= 1mA
VGS (th)
1.0
180
240
310
600
−
−
−
−
−
−
−
−
−
−
−
V
130
170
220
300
−
110
18
15
5
mΩ ID= 1.5A, VGS= 4.5V
mΩ ID= 1.5A, VGS= 2.5V
mΩ ID= 0.8A, VGS= 1.8V
mΩ ID= 0.3A, VGS= 1.5V
Static drain-source on-state
resistance
∗
RDS (on)
−
1.6
∗
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Yfs
Ciss
S
VDS= 10V, ID= 1.5A
−
−
−
−
−
−
−
−
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS= 10V
VGS=0V
f=1MHz
Coss
Crss
td (on)
∗
∗
∗
V
DD 10V
= 1A
I
D
t
r
5
V
R
R
GS= 4.5V
Turn-off delay time
Fall time
td (off)
20
3
L
10Ω
∗
∗
tf
G
= 10Ω
Total gate charge
Gate-source charge
Qg
1.8
0.3
0.3
VDD 10V, VGS= 4.5V
ID= 1.5A, RL 6.7Ω
RG= 10Ω
∗
∗
Qgs
Qgd
−
−
Gate-drain charge
∗Pulsed
<Body diode characteristics (Source-drain)>
Parameter
Symbol Min. Typ. Max.
Conditions
Unit
V
∗
Forward voltage
V
SD
−
−
1.2
IS= 1.5A, VGS=0V
∗Pulsed
<Di>
Parameter
Symbol Min. Typ. Max.
Conditions
IF= 0.1A
Unit
V
−
−
−
−
−
−
0.36
0.52
100
Forward voltage
Reverse current
VF
V
IF= 0.5A
I
R
µA
V = 20V
R
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2009.12 - Rev.A
2/5
c
○ 2009 ROHM Co., Ltd. All rights reserved.
ES6U2
Data Sheet
zElectrical characteristics curves
1.5
1
1.5
10
1
Ta=25°C
VGS= 10V
Ta=25°C
Pulsed
VDS= 10V
Pulsed
VGS= 4.5V
VGS= 1.8V
Pulsed
VGS= 4.5V
VGS= 2.5V
VGS= 1.5V
Ta= 125°C
1
Ta= 75°C
Ta= 25°C
VGS= 1.5V
VGS= 1.8V
Ta= - 25°C
0.1
VGS= 1.3V
0.5
0
0.5
0
VGS= 1.3V
VGS= 1.2V
0.8
0.01
0.001
VGS= 1.1V
0
2
4
6
8
10
0
0.5
1
1.5
2
0
0.2
0.4
0.6
1
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.1 Typical Output Characteristics(
DRAIN-SOURCE VOLTAGE : VDS[V]
GATE-SOURCE VOLTAGE : VGS[V]
Fig.3 Typical Transfer Characteristics
)
Ⅰ
Fig.2 Typical Output Characteristics(
)
Ⅱ
10000
10000
1000
100
10000
VGS= 4.5V
Pulsed
Ta= 25°C
Pulsed
VGS= 2.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
VGS= 1.5V
VGS= 1.8V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
VGS= 2.5V
1000
100
10
1000
100
10
VGS= 4.5V
10
0.01
0.1
1
10
0.01
0.1
1
10
0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(
)
Ⅰ
)
)
Ⅲ
Ⅱ
10000
1000
100
10000
1000
100
10
VGS= 1.5V
Pulsed
VGS= 1.8V
Pulsed
VDS= 10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
10
10
0.1
0.01
0.1
1
10
0.01
0.1
1
10
0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
Fig.8 Static Drain-Source On-State
DRAIN-CURRENT : ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(
Fig.9 Forward Transfer Admittance
vs. Drain Current
)
Ⅳ
Resistance vs. Drain Current(
)
Ⅴ
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2009.12 - Rev.A
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○ 2009 ROHM Co., Ltd. All rights reserved.
ES6U2
Data Sheet
600
500
400
300
200
100
0
10
1000
100
10
Ta=25°C
Pulsed
VGS=0V
Pulsed
Ta=25°C
DD= 10V
GS=4.5V
V
V
td(off)
ID= 0.8A
ID= 1.5A
RG=10Ω
tf
Pulsed
1
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
td(on)
tr
0.01
1
0
0.5
1
1.5
0
2
4
6
8
10
0.01
0.1
1
10
SOURCE-DRAIN VOLTAGE : VSD [V]
GATE-SOURCE VOLTAGE : VGS[V]
DRAIN-CURRENT : ID[A]
Fig.12 Switching Characteristics
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
5
Ta=25°C
f=1MHz
V
GS=0V
4
3
2
1
0
Ciss
100
Coss
Ta=25°C
Crss
VDD= 10V
ID= 1.5A
RG=10Ω
Pulsed
10
0.01
0.1
1
10
100
0
0.5
1
1.5
2
TOTAL GATE CHARGE : Qg [nC]
Fig.13 Dynamic Input Characteristics
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
<Di>
100000
10000
1000
100
1
pulsed
pulsed
Ta = 75
℃
0.1
Ta = 25
℃
Ta = 75
℃
10
Ta = 25
℃
Ta= - 25
℃
Ta= - 25
℃
0.01
1
0.1
0.01
0.001
0
5
10
REVERSE VOLTAGE : VR[V]
Fig.1 Reverse Current vs. Reverse Voltage
15
20
25
0
0.1
0.2
0.3
0.4
0.5
0.6
FORWARD VOLTAGE : VF[V]
Fig.2 Forward Current vs. Forward Voltage
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2009.12 - Rev.A
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○ 2009 ROHM Co., Ltd. All rights reserved.
ES6U2
Data Sheet
zMeasurement circuit
Pulse Width
90%
I
D
VDS
50%
10%
V
GS
50%
V
GS
RL
V
DS
D.U.T.
10%
90%
10%
VDD
RG
90%
tf
t
d(on)
td(off)
t
r
t
on
toff
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
VG
I
D
VDS
Q
g
V
GS
RL
V
GS
D.U.T.
I
G(Const.)
Q
gs
Qgd
VDD
RG
Charge
Fig.2-1 Gate Charge Measurement Circuit
FIg.2-2 Gate Charge Waveform
zNotice
1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and
increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding
temperature, generating heat of MOSFET and the reverse current.
2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD
protection circuit.
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2009.12 - Rev.A
5/5
c
○ 2009 ROHM Co., Ltd. All rights reserved.
Notice
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The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
nication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
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The Products are not designed or manufactured to be used with any equipment, device or
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More detail product informations and catalogs are available, please contact us.
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R0039
A
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