SMG2314N [SECOS]
N-Channel Enhancement Mode MOSFET; N沟道增强型MOSFET
| 型号： | SMG2314N |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总4页 (文件大小：650K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMG2314N
4A , 20V, RDS(ON) 32 m
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
SC-59
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell
A
Density process. Low RDS(on) assures minimal power loss and
conserves energy, making this device ideal for use in power
management circuitry. Typical applications are power switch,
power management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and
cordless telephones.
L
3
3
Top View
C B
1
1
2
2
K
F
E
D
FEATURES
H
J
G
Low RDS(on) provides higher efficiency and extends
battery life.
Low gate charge
Fast switch
Miniature SC-59 surface mount package saves
board space.
Millimeter
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
REF.
REF.
Min.
Max.
3.10
3.00
1.70
1.40
A
B
C
D
2.70
2.25
1.30
1.00
G
H
J
0.10
0.20
K
0.45
0.85
0.55
1.15
E
F
1.70
0.35
2.30
0.50
L
PACKAGE INFORMATION
Package
MPQ
3K
LeaderSize
SC-59
7’ inch
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
20
±12
V
V
ID @ TA=25°C
ID @ TA=70°C
4.0
A
Continuous Drain Current 1
ID
3.1
A
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
IDM
IS
±20
A
1.6
A
PD @ TA=25°C
PD @ TA=70°C
1.3
W
W
°C
PD
0.8
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ 150
Thermal Resistance Ratings
t ≦ 5 sec
100
166
Maximum Junction to Ambient 1
Notes:
R
JA
°C / W
Steady State
1
2
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Jan-2011 Rev. A
Page 1 of 4
SMG2314N
4A , 20V, RDS(ON) 32 m
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Gate-Body Leakage
Symbol
VGS(th)
IGSS
Min.
Typ.
Max.
Unit
Test Conditions
0.7
-
-
±100
1
V
VDS=VGS, ID= 250uA
-
-
-
nA VDS= 0V, VGS= ±8V
-
VDS= 16V, VGS= 0V
uA
Zero Gate Voltage Drain Current
On-State Drain Current 1
IDSS
ID(on)
-
-
10
-
VDS= 16V, VGS= 0V, TJ= 55°C
10
-
-
-
A
VDS = 5V, VGS= 4.5V
VGS= 4.5V, ID= 4.6A
VGS= 2.5V, ID= 3.9A
VDS= 10V, ID= 4.0A
IS= 1.6A, VGS= 0V
32
44
-
Drain-Source On-Resistance 1
RDS(ON)
mΩ
-
-
Forward Transconductance 1
Diode Forward Voltage
gfs
-
11.3
0.75
S
V
VSD
-
-
Dynamic 2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Qg
Qgs
Qgd
Td(on)
Tr
-
-
-
-
-
-
-
13.4
0.9
2.0
8
-
-
-
-
-
-
-
VDS= 10V, VGS= 4.5V,
ID= 4.0A
nC
nS
24
VDD= 10V, VGEN= 4.5V,
RL= 15, ID= 1A
Turn-off Delay Time
Fall Time
Td(off)
Tf
35
10
Source-Ddrain Reverse
Recovery Time
Notes:
Trr
-
40
-
IF=1.6A, di/dt =100 A/uS
1
2
Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Jan-2011 Rev. A
Page 2 of 4
SMG2314N
4A , 20V, RDS(ON) 32 m
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Jan-2011 Rev. A
Page 3 of 4
SMG2314N
4A , 20V, RDS(ON) 32 m
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Jan-2011 Rev. A
Page 4 of 4
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