70-W212NMA400M7-LC08F71 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 70-W212NMA400M7-LC08F71 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总31页 (文件大小：3452K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
70-W212NMA400M7-LC08F71
datasheet
VINcoMNPC X4
1200 V / 400 A
Features
VINco X4 housing
● IGBT M7 technology with low VCEsat and improved EMC behavior
● Low inductive package
● High efficiency
● Integrated snubber capacitors
Schematic
Target applications
● Solar Inverters
● UPS
Types
● 70-W212NMA400M7-LC08F71
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Switch
VCES
IC
Collector-emitter voltage
1200
370
800
646
±20
9,5
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
Short circuit ratings
VGE = 15 V
Vcc = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
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27 Nov. 2019 / Revision 2
70-W212NMA400M7-LC08F71
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
267
800
361
175
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Buck Sw. Protection Diode
VRRM
IF
Ptot
Tjmax
Peak repetitive reverse voltage
1200
22
V
A
Continuous (direct) forward current
Total power dissipation
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
39
W
°C
Maximum junction temperature
175
Boost Switch
Collector-emitter voltage
≤ 50%
> 50%
650
500
VCES
IC
Relative moisture level
Tj = Tjmax
V
A
Collector current
Ts = 80 °C
342
800
495
±20
9
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
Ts = 80 °C
W
V
Short circuit ratings
VGE = 15 V
Vcc = 400 V Tj = 150 °C
µs
°C
Tjmax
Maximum junction temperature
175
Boost Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
236
800
361
175
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Copyright Vincotech
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70-W212NMA400M7-LC08F71
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
650
49
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
Ptot
80
A
Tj = Tjmax
84
W
°C
Tjmax
Maximum junction temperature
175
Capacitor (DC)
VMAX
Top
Maximum DC voltage
630
V
Operation Temperature
-40…+105
°C
Module Properties
Thermal Properties
Tstg
Storage temperature
-40…+125
°C
Tjop
Operation temperature under switching condition
Maximum allowed PCB temperature
Isolation Properties
-40…(Tjmax - 25)
°C
°C
TPCB
125
DC Test Voltage*
AC Voltage
tp = 2 s
4000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
Clearance
min. 12,7
min. 12,7
> 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,04
400
25
5,4
6
6,6
V
V
25
1,53
1,70
1,75
1,85
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
400
µA
nA
Ω
20
2000
none
84000
2800
1120
2800
Cies
Coes
Cres
Qg
Output capacitance
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
15
600
400
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,147
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
25
614
604
132
150
373
399
55
75
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Rgon = 2 Ω
Rgoff = 2 Ω
ns
Turn-off delay time
Fall time
±15
350
400
34,61
44,42
15,44
Qr
Qr
= 32,9 μC
= 66,9 μC
FWD
Eon
Turn-on energy (per pulse)
FWD
mWs
Eoff
Turn-off energy (per pulse)
125
20,24
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Diode
Static
25
125
150
1,57
1,60
1,60
1,85
200
VF
IR
Forward voltage
400
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,263
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
143
172
561
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
trr
Qr
ns
960
di/dt = 2993 A/μs
di/dt = 2752 A/μs
32,94
66,92
6,60
15,31
912
±15
350
400
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
602
Buck Sw. Protection Diode
Static
25
125
150
1,61
1,69
1,69
2,1
50
VF
IR
Forward voltage
20
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
2,444
K/W
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,04
400
25
5,4
6
6,6
1,6
V
V
25
1,41
1,51
1,54
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
200
µA
nA
Ω
20
2000
none
48000
2280
960
Cies
Coes
Cres
Qg
Output capacitance
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
15
300
400
1640
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,192
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
25
351
343
105
110
252
275
61
73
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Rgon = 2 Ω
Rgoff = 2 Ω
ns
Turn-off delay time
Fall time
±15
350
400
22,55
26,83
13,64
Qr
Qr
= 30,4 μC
= 48,1 μC
FWD
Eon
Turn-on energy (per pulse)
FWD
mWs
Eoff
Turn-off energy (per pulse)
125
19,16
Copyright Vincotech
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Diode
Static
25
125
150
1,82
1,96
1,97
2,1
VF
IR
Forward voltage
400
V
Reverse leakage current
1200
25
160
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,26
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
184
204
397
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
trr
Qr
ns
541
di/dt = 4200 A/μs
di/dt = 3250 A/μs
30,43
48,07
5,82
10,13
750
±15
350
400
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
639
Boost Sw. Protection Diode
Static
25
125
150
1,74
1,66
1,61
1,87
0,48
VF
IR
Forward voltage
40
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,13
K/W
Capacitor (DC)
Capacitance
C
1360
nF
%
%
Tolerance
-10
+10
0,04
Dissipation factor
Climatic category
f = 1 kHz
20
40/105/56
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Thermistor
R
ΔR/R
P
Rated resistance
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
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70-W212NMA400M7-LC08F71
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
1200
1200
VGE
:
7
V
V
V
I
I
8
9
10
11
12
13
14
15
16
17
V
V
V
V
V
V
V
V
900
900
600
300
0
600
300
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
V
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
400
I
Z
10-1
300
10-2
10-3
10-4
200
100
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
0
0
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
2
4
6
8
10
12
VG E (V)
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
0,147
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,21E-02
2,13E-02
3,11E-02
5,30E-02
1,72E-02
5,27E-03
7,06E-03
2,29E+00
4,14E-01
7,62E-02
1,97E-02
5,97E-03
1,21E-03
1,51E-04
Copyright Vincotech
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70-W212NMA400M7-LC08F71
datasheet
Buck Switch Characteristics
figure 6.
IGBT
Safe operating area
I C = f(VCE
)
1ms
10µs
1000
10ms
100µs
100ms
DC
I
100
10
1
0,1
0,01
1
10
100
1000
10000
VC E (V)
D =
single pulse
80
Ts
=
ºC
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
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70-W212NMA400M7-LC08F71
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
1200
Z
900
600
300
0
10-1
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
0,263
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ (s)
2,16E-02
3,81E-02
5,56E-02
9,48E-02
3,07E-02
9,42E-03
1,26E-02
4,10E+00
7,41E-01
1,36E-01
3,53E-02
1,07E-02
2,17E-03
2,69E-04
Copyright Vincotech
11
27 Nov. 2019 / Revision 2
70-W212NMA400M7-LC08F71
datasheet
Buck Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
60
Z
45
30
15
0
10-1
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
0,5
1
1,5
2
2,5
3
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
2,444
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ (s)
1,91E-01
3,28E-01
5,94E-01
9,46E-01
2,58E-01
1,27E-01
1,38E+01
2,37E+00
4,22E-01
1,13E-01
1,90E-02
2,09E-03
Copyright Vincotech
12
27 Nov. 2019 / Revision 2
70-W212NMA400M7-LC08F71
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
1200
1200
VGE
:
7 V
I
I
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
900
900
600
300
600
300
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
V
Tj:
Tj =
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
400
I
Z
300
10-1
200
100
0,5
10-2
0,2
0,1
0,05
0,02
0,01
0,005
0
10-3
10-5
0
0
10-4
10-3
10-2
10-1
100
101
tp(s)
102
2
4
6
8
10
12
14
VG E (V)
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
0,192
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,58E-02
2,78E-02
4,06E-02
6,92E-02
2,24E-02
6,88E-03
9,22E-03
3,00E+00
5,41E-01
9,95E-02
2,58E-02
7,80E-03
1,58E-03
1,97E-04
Copyright Vincotech
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70-W212NMA400M7-LC08F71
datasheet
Boost Switch Characteristics
figure 6.
IGBT
Safe operating area
I C = f(VCE
)
1ms
100µs
10µs
1000
10ms
100ms
DC
I
100
10
1
0,1
0,01
1
10
100
1000
VC E (V)
D =
single pulse
80
Ts
=
ºC
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
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27 Nov. 2019 / Revision 2
70-W212NMA400M7-LC08F71
datasheet
Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
1200
10-1
Z
900
600
300
0
10-2
10-3
10-4
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-5
=
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
Tj:
R th(j-s)
0,26
K/W
FWD thermal model values
R (K/W)
τ (s)
2,16E-02
3,81E-02
5,56E-02
9,48E-02
3,07E-02
9,42E-03
1,26E-02
4,10E+00
7,41E-01
1,36E-01
3,53E-02
1,07E-02
2,17E-03
2,69E-04
Copyright Vincotech
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27 Nov. 2019 / Revision 2
70-W212NMA400M7-LC08F71
datasheet
Boost Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
120
Z
90
60
30
0
100
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
1,13
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ (s)
7,96E-02
1,66E-01
2,55E-01
3,92E-01
1,41E-01
3,48E-02
6,52E-02
1,68E+01
3,48E+00
7,36E-01
1,27E-01
3,52E-02
5,62E-03
1,24E-03
Thermistor Characteristics
figure 1.
Thermistor
Typical Thermistor resistance values
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
NTC-typical temperature characteristic
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
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datasheet
Buck Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
140
100
E
E
Eon
Eon
Eon
105
75
Eon
70
35
0
50
25
0
Eoff
Eoff
Eoff
Eoff
0
200
400
600
800
0
2
4
6
8
10
Rg (Ω)
IC (A)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
350
±15
2
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
400
V
V
A
Tj:
125 °C
R gon
R goff
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
20
30
E
E
16
24
Erec
Erec
12
8
18
12
6
Erec
Erec
4
0
0
0
2
4
6
8
10
0
200
400
600
800
IC (A)
Rg (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
350
±15
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
400
V
V
A
Tj:
125 °C
125 °C
R gon
Copyright Vincotech
17
27 Nov. 2019 / Revision 2
70-W212NMA400M7-LC08F71
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
10
10
t
t
td(on)
td(off)
1
1
td(on)
td(off)
tr
tr
0,1
0,1
tf
tf
0,01
0,01
0
2
4
6
8
10
0
200
400
600
800
IC (A)
Rg (Ω)
With an inductive load at
With an inductive load at
Tj =
150
350
±15
2
°C
V
Tj =
150
350
±15
400
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon)
1,6
1,6
t
t
1,2
1,2
trr
trr
0,8
0,4
0
0,8
0,4
trr
trr
0
0
0
200
400
600
800
2
4
6
8
10
Rgon (Ω)
IC (A)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
VCE
=
=
=
350
±15
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
400
V
V
A
Tj:
125 °C
VGE
R gon
Copyright Vincotech
18
27 Nov. 2019 / Revision 2
70-W212NMA400M7-LC08F71
datasheet
Buck Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
120
100
Q
Q
Qr
90
75
Qr
Qr
60
30
0
50
25
Qr
0
0
0
200
400
600
800
2
4
6
8
10
Rgon (Ω)
IC (A)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
VCE
=
=
=
350
±15
2
V
V
Ω
Tj:
VCE=
VGE =
I C=
350
±15
400
V
V
A
Tj:
125 °C
VGE
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
300
300
I
I
225
225
IRM
IRM
150
75
150
75
IRM
IRM
0
0
0
0
2
4
6
8
10
Rgo n (Ω)
200
400
600
800
IC (A)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
VCE
=
=
=
350
±15
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
400
V
V
A
Tj:
125 °C
VGE
R gon
Copyright Vincotech
19
27 Nov. 2019 / Revision 2
70-W212NMA400M7-LC08F71
datasheet
Buck Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
5000
5000
diF/dt
dir r/dt
diF/dt
dir r/dt
t
t
i
i
4000
4000
3000
2000
1000
3000
2000
1000
0
0
0
0
2
4
6
8
10
Rgon (Ω)
200
400
600
25 °C
800
IC (A)
With an inductive load at
With an inductive load at
25 °C
VCE
=
=
=
350
±15
2
V
V
Ω
Tj:
VCE =
VGE =
I C=
350
±15
400
V
V
A
Tj:
125 °C
125 °C
VGE
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
900
IC MAX
I
800
700
600
500
400
300
200
100
0
I
I
V
0
200
400
600
800
1000
1200
1400
VC E (V)
At
Tj =
125
°C
Ω
R gon
R goff
=
=
2
2
Ω
Copyright Vincotech
20
27 Nov. 2019 / Revision 2
70-W212NMA400M7-LC08F71
datasheet
Buck Switching Definitions
General conditions
T j
=
=
=
125 °C
R gon
R goff
2 Ω
2 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t (µs)
t (µs)
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
400
399
V
350
400
604
V
A
A
tdoff
=
ns
tdon
=
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t (µs)
t (µs)
VC (100%) =
I C (100%) =
tf =
350
400
75
V
VC (100%) =
I C (100%) =
350
400
150
V
A
A
ns
tr
=
ns
Copyright Vincotech
21
27 Nov. 2019 / Revision 2
70-W212NMA400M7-LC08F71
datasheet
Buck Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t (µs)
t (µs)
VF (100%) =
I F (100%) =
I RRM (100%) =
350
400
172
960
V
I F (100%) =
Q r (100%) =
400
67
A
A
μC
A
trr
=
ns
Copyright Vincotech
22
27 Nov. 2019 / Revision 2
70-W212NMA400M7-LC08F71
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
80
60
E
E
Eon
Eon
60
45
Eon
Eon
40
20
0
30
15
0
Eoff
Eoff
Eoff
Eoff
0
200
400
600
800
0
2
4
6
8
10
Rg (Ω)
IC (A)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
350
±15
2
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
400
V
V
A
Tj:
125 °C
R gon
R goff
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
16
20
E
E
12
15
Erec
Erec
8
4
0
10
5
Erec
Erec
0
0
2
4
6
8
10
0
200
400
600
800
IC (A)
Rg (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
350
±15
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
400
V
V
A
Tj:
125 °C
125 °C
R gon
Copyright Vincotech
23
27 Nov. 2019 / Revision 2
70-W212NMA400M7-LC08F71
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
1
1
td(on)
td(off)
t
t
td(on)
td(off)
tr
tr
0,1
0,1
tf
tf
0,01
0,01
0
2
4
6
8
10
0
200
400
600
800
IC (A)
Rg (Ω)
With an inductive load at
With an inductive load at
Tj =
150
350
±15
2
°C
V
Tj =
150
350
±15
400
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon)
1
1
t
t
0,75
0,75
trr
trr
trr
0,5
0,25
0
0,5
trr
0,25
0
0
0
200
400
600
800
2
4
6
8
10
Rgon (Ω)
IC (A)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
VCE
=
=
=
350
±15
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
400
V
V
A
Tj:
125 °C
VGE
R gon
Copyright Vincotech
24
27 Nov. 2019 / Revision 2
70-W212NMA400M7-LC08F71
datasheet
Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
100
80
Q
Q
75
60
Qr
Qr
Qr
Qr
50
25
0
40
20
0
0
0
200
400
600
800
2
4
6
8
10
Rgon (Ω)
IC (A)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
VCE
=
=
=
350
±15
2
V
V
Ω
Tj:
VCE=
VGE =
I C=
350
±15
400
V
V
A
Tj:
125 °C
VGE
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
400
400
I
I
300
300
IRM
200
100
200
100
IRM
IRM
IRM
0
0
0
0
2
4
6
8
10
Rgo n (Ω)
200
400
600
800
IC (A)
With an inductive load at
25 °C
125 °C
With an inductive load at
25 °C
VCE
=
=
=
350
±15
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
400
V
V
A
Tj:
125 °C
VGE
R gon
Copyright Vincotech
25
27 Nov. 2019 / Revision 2
70-W212NMA400M7-LC08F71
datasheet
Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
6000
5000
diF/dt
dir r/dt
diF/dt
dir r/dt
t
t
i
i
4000
4500
3000
1500
3000
2000
1000
0
0
0
0
3
5
8
10
Rgon (Ω)
200
400
600
25 °C
800
IC (A)
With an inductive load at
With an inductive load at
25 °C
125 °C
VCE
=
=
=
350
±15
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
400
V
V
A
Tj:
125 °C
VGE
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
900
IC MAX
I
800
700
600
500
400
300
200
100
0
I
I
V
0
100
200
300
400
500
600
700
VC E (V)
At
Tj =
125
°C
Ω
R gon
R goff
=
=
2
2
Ω
Copyright Vincotech
26
27 Nov. 2019 / Revision 2
70-W212NMA400M7-LC08F71
datasheet
Boost Switching Definitions
General conditions
T j
=
=
=
125 °C
R gon
R goff
2 Ω
2 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t (µs)
t (µs)
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
400
275
V
350
400
343
V
A
A
tdoff
=
ns
tdon
=
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t (µs)
t (µs)
VC (100%) =
I C (100%) =
tf =
350
400
73
V
VC (100%) =
I C (100%) =
350
400
110
V
A
A
ns
tr
=
ns
Copyright Vincotech
27
27 Nov. 2019 / Revision 2
70-W212NMA400M7-LC08F71
datasheet
Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t (µs)
t (µs)
VF (100%) =
I F (100%) =
I RRM (100%) =
350
400
204
541
V
I F (100%) =
Q r (100%) =
400
48
A
A
μC
A
trr
=
ns
Copyright Vincotech
28
27 Nov. 2019 / Revision 2
70-W212NMA400M7-LC08F71
datasheet
Ordering Code & Marking
Version
Ordering Code
without thermal paste
with thermal paste
70-W212NMA400M7-LC08F71
70-W212NMA400M7-LC08F71-/3/
Name
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
YK/Date code
Lot
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Serial
Vincotech
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
UL
TTTTTTTVV
LLLLL
SSSS
Outline
Driver pins
Y1
Pin
X1
4,5
4,5
Function
G11-1
78,65
81,55
1.1
1.2
S11-1
G11-2
S11-2
1.3
1.4
39,5
39,5
78,65
81,55
1.5 19,45 30,15 DC+desat
1.6 24,55 30,15 DC+desat
1.7
1.8
1,95
4,85
68,4
68,4
68,4
68,4
S14-1
G14-1
G14-2
S14-2
1.9 39,15
1.10 42,05
1.11 19,45 44,65 GND_desat
1.12 24,55 44,65 GND_desat
1.13 -2,2
1.14 -2,2
1.15 46,2
1.16 46,2
1.17 -6,75
1.18 -6,75
1.19 50,75
1.20 50,75
1.21 67,65
1.22 67,65
46
G13-1
S13-1
G13-2
S13-2
S12-1
G12-1
S12-2
G12-2
Therm2
Therm1
48,9
46
48,9
29,2
32,1
29,2
32,1
86,7
89,8
Power interconnections
M6 screw
X2
0
Y2
0
Function
Phase
Phase
Phase
DC+
2.1
2.2
22
44
0
0
2.3
0
2.4
110,4
110,4
110,4
2.5
2.6
22
44
GND
DC-
Low current connections
M4 screw
X3
3.1 -37,4
3.2 81,4
3.3 -37,4
3.4 81,4
3.5 -37,4
3.6 81,4
3.7 -37,4
3.8 81,4
Y3
Function
DC+
DC+
EH
89,8
89,8
65,2
65,2
45,2
45,2
20,6
20,6
EH
Phase
Phase
DC-
DC-
Copyright Vincotech
29
27 Nov. 2019 / Revision 2
70-W212NMA400M7-LC08F71
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12
IGBT
1200 V
400 A
400 A
20 A
Buck Switch
Buck Diode
D11, D12
D41, D42
T13, T14
D13, D14
D43, D44
C10, C20
Rt
FWD
FWD
650 V
1200 V
650 V
1200 V
650 V
630V
Buck Sw. Protection Diode
Boost Switch
IGBT
400 A
400 A
40 A
FWD
Boost Diode
FWD
Boost Sw. Protection Diode
Capacitor (DC)
Capacitor
NTC
Thermistor
Copyright Vincotech
30
27 Nov. 2019 / Revision 2
70-W212NMA400M7-LC08F71
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 8
>SPQ
Standard
<SPQ
Sample
Handling instructions for VINco X4 packages see vincotech.com website.
Package data
Package data for VINco X4 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
70-W212NMA400M7-LC08F71-D2-14
27 Nov. 2019
SPQ, Handling instruction, Package data
31
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
31
27 Nov. 2019 / Revision 2
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