70-W212NMA600M7-LC09F71

datasheet

VINcoMNPC X4

1200 V / 600 A

Topology features

VINco X4 12 mm housing

● Common Emitter configuration

● Desaturation Pins

● Mixed Voltage Neutral Point Clamped Topology (T-Type)

● On-board Capacitors

● Temperature sensor

Component features

● Easy paralleling

● Low turn-off losses

● Low collector emitter saturation voltage

● Positive temperature coefficient

● Short tail current

● Switching optimized for EMC

Housing features

● Base isolation: Al₂O₃

● Optimized for three-level topologies

● Enables high switching frequencies

● Low inductive package

Schematic

● Easy paralleling

● Optimal current sharing

● Thermo-mechanical push-and-pull force relief

● M6 High Power Screw Contact

● M4 Low Inductive Interface

● Press-fit connection to driver PCB

Target applications

● Solar Inverters

● UPS

Types

● 70-W212NMA600M7-LC09F71

Copyright Vincotech

1

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Buck Switch

V_CES

Collector-emitter voltage

1200

475

1200

819

±20

9,5

V

A

I_C

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

I_CRM

t_plimited by T_jmax

T_j= T_jmax

A

P_tot

W

V

V_GES

Gate-emitter voltage

t_SC

Short circuit ratings

V_GE= 15 V, V_CC= 800 V

µs

°C

T_jmax

Maximum junction temperature

175

Buck Diode

V_RRM

Peak repetitive reverse voltage

650

352

1200

475

175

V

A

I_F

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

A

P_tot

W

°C

T_jmax

Maximum junction temperature

Buck Sw. Protection Diode

V_RRM

Peak repetitive reverse voltage

1200

35

V

A

I_F

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

40

A

P_tot

77

W

°C

T_jmax

Maximum junction temperature

175

Copyright Vincotech

2

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Boost Switch

≤ 50%

> 50%

650

500

Relative moisture level

V_CES

Collector-emitter voltage

V

A

I_C

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

468

1200

625

±20

9

I_CRM

t_plimited by T_jmax

T_j= T_jmax

A

P_tot

W

V

V_GES

Gate-emitter voltage

t_SC

Short circuit ratings

V_GE= 15 V, V_CC= 400 V

µs

°C

T_jmax

Maximum junction temperature

175

Boost Diode

V_RRM

Peak repetitive reverse voltage

1200

338

511

175

V

A

I_F

Forward current (DC current)

Total power dissipation

T_j= T_jmax

T_s= 80 °C

P_tot

W

°C

T_jmax

Maximum junction temperature

Boost Sw. Protection Diode

V_RRM

Peak repetitive reverse voltage

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

650

48

V

A

I_F

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

80

A

P_tot

84

W

°C

T_jmax

Maximum junction temperature

175

Capacitor (DC)

V_MAX

Maximum DC voltage

630

V

T_op

Operation Temperature

-40 ... 105

°C

Copyright Vincotech

3

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Module Properties

Thermal Properties

T_stg

Storage temperature

-40…+125

-40…+(T_jmax- 25)

125

°C

Operation temperature under switching

condition

T_jop

Maximum allowed PCB temperature

T_PCB

Isolation Properties

Isolation voltage

Creepage distance

Clearance

V_isol

DC Test Voltage*

AC Voltage

t_p= 2 s

4000

2500

V

t_p= 1 min

V

>12,7

≥ 200

mm

Comparative Tracking Index

*100 % tested in production

CTI

Copyright Vincotech

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15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Buck Switch

Static

V_GE(th)

Gate-emitter threshold voltage

10

0,06

600

25

5,4

6

6,6

V

25

1,58

1,8

1,85⁽¹⁾

V_CEsat

Collector-emitter saturation voltage

15

125

150

1,86

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

0

1200

0

25

400

µA

nA

Ω

20

2000

0,75

120000

3520

C_ies

C_oes

C_res

Q_g

pF

nC

Output capacitance

Reverse transfer capacitance

Gate charge

0

10

25

1280

V_CC= 600 V

0/15

600

4000

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

0,12

K/W

25

458

472

t_d(on)

Turn-on delay time

Rise time

ns

125

25

76

t_r

125

25

89

R_gon= 1 Ω

R_goff= 1 Ω

360

t_d(off)

Turn-off delay time

Fall time

ns

125

25

386

±15

350

600

62,1

84,31

28,01

38,42

24,43

31,55

t_f

ns

125

25

Q_rFWD=45,44 µC

Q_rFWD=83,52 µC

E_on

E_off

Turn-on energy (per pulse)

Turn-off energy (per pulse)

mWs

125

25

125

Copyright Vincotech

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15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Buck Diode

Static

25

1,62

1,63

1,64

1,85⁽¹⁾

200

V_F

I_R

Forward voltage

600

125

150

V

Reverse leakage current

Thermal

V_r= 650 V

25

µA

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

0,2

K/W

25

321,31

348,23

353,62

631,4

45,44

83,52

10,47

20,26

3597

I_RM

Peak recovery current

Reverse recovery time

Recovered charge

A

125

25

t_rr

ns

125

25

di/dt=10600 A/µs

di/dt=4275 A/µs

Q_r

±15

350

600

μC

125

25

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

mWs

A/µs

125

25

(di_rf/dt)_max

125

2787

Copyright Vincotech

6

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

Buck Sw. Protection Diode

Static

25

1,61

1,69

1,7

1,9⁽¹⁾

V_F

I_R

Forward voltage

20

125

150

V

Reverse leakage current

Thermal

V_r= 1200 V

25

50

µA

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

1,23

K/W

Copyright Vincotech

7

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Boost Switch

Static

V_GE(th)

Gate-emitter threshold voltage

10

0,06

600

25

5,4

6

6,6

V

25

1,37

1,43

1,45

1,6⁽¹⁾

V_CEsat

Collector-emitter saturation voltage

15

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

0

650

0

25

200

800

µA

nA

Ω

20

1

C_ies

C_oes

C_res

Q_g

76000

3280

1400

2480

pF

nC

Output capacitance

Reverse transfer capacitance

Gate charge

0

10

25

V_CC= 300 V

15

600

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

0,15

K/W

25

324

333

t_d(on)

Turn-on delay time

Rise time

ns

125

25

65

t_r

125

25

82

R_gon= 1 Ω

R_goff= 1 Ω

284

t_d(off)

Turn-off delay time

Fall time

ns

125

25

309

±15

350

600

69,98

82,78

18,5

27,76

22,3

29,76

t_f

ns

125

25

Q_rFWD=56,27 µC

Q_rFWD=73,47 µC

E_on

E_off

Turn-on energy (per pulse)

Turn-off energy (per pulse)

mWs

125

25

125

Copyright Vincotech

8

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Boost Diode

Static

25

1,8

1,9

2,1⁽¹⁾

160

V_F

I_R

Forward voltage

600

125

150

V

Reverse leakage current

Thermal

V_r= 1200 V

25

µA

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

0,19

K/W

25

408,32

397,79

334,88

476,52

56,27

73,47

13,77

17,42

4382

I_RM

Peak recovery current

Reverse recovery time

Recovered charge

A

125

25

t_rr

ns

125

25

di/dt=11600 A/µs

di/dt=5938 A/µs

Q_r

±15

350

600

μC

125

25

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

mWs

A/µs

125

25

(di_rf/dt)_max

125

2758

Copyright Vincotech

9

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

Boost Sw. Protection Diode

Static

25

1,23

1,74

1,65

1,61

1,87⁽¹⁾

0,48

V_F

I_R

Forward voltage

40

125

150

V

Reverse leakage current

Thermal

V_r= 650 V

25

µA

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

1,14

K/W

Capacitor (DC)

Static

DC bias voltage =

0 V

C

Capacitance

25

1360

nF

%

Tolerance

-10

10

Dissipation factor

Climatic category

0,04

40/105/56

Thermistor

Static

R

Δ_R/R

P

Rated resistance

Deviation of R₁₀₀

Power dissipation

Power dissipation constant

B-value

25

22

kΩ

%

R₁₀₀= 1484 Ω

100

25

-5

5

130

1,5

mW

mW/K

K

d

25

B_(25/50)

Tol. ±1 %

3962

4000

B_(25/100)

B-value

K

Vincotech Thermistor Reference

I

(1)

Value at chip level

(2)

Only valid with pre-applied Vincotech thermal interface material.

Copyright Vincotech

10

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Buck Switch Characteristics

figure 1.

IGBT

figure 2.

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

1750

V_GE

:

7 V

8 V

9 V

1500

1250

1000

750

500

250

0

1500

1250

1000

750

500

250

0

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

0

1

2

3

4

5

0

1

2

3

4

5

V

_CE(V)

V_CE(V)

t_p

=

t_p

=

250

15

μs

V

250

150

μs

°C

25 °C

125 °C

150 °C

V_GE

T_j=

T_j:

V_GEfrom 7 V to 17 V in steps of 1 V

figure 3.

IGBT

figure 4.

IGBT

Typical transfer characteristics

Transient thermal impedance as a function of pulse width

I_C= f(V_GE

)

Z_th(j-s)= f(t_p)

0

600

10

500

400

300

200

100

0

-1

10

-2

10

0,5

0,2

0,1

0,05

0,02

0,01

0,005

0

-3

10

-4

10

-5

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

0,0

2,5

5,0

7,5

10,0

12,5

10

t_p(s)

V

_GE(V)

t_p

=

250

10

μs

V

D =

t_p/ T

0,116

25 °C

125 °C

150 °C

V_CE

=

R_th(j-s)=

T_j:

K/W

IGBT thermal model values

R (K/W)

τ (s)

1,98E-02

3,00E-02

3,39E-02

2,73E-02

4,89E-03

4,58E+00

1,08E+00

1,49E-01

2,18E-02

5,44E-04

Copyright Vincotech

11

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Buck Switch Characteristics

figure 5.

IGBT

figure 6.

IGBT

Safe operating area

Gate voltage vs gate charge

I_C= f(V_CE

)

V_GE= f(Q_g)

10000

1000

100

10

17,5

15,0

12,5

10,0

7,5

10µs

100µs

1ms

10ms

100ms

DC

1

5,0

0,1

2,5

0,01

0,0

1

10

100

1000

10000

0

500 1000 1500 2000 2500 3000 3500 4000 4500

V

_CE(V)

Q_g(μC)

D =

I_C

=

single pulse

150

25

A

T_s=

T_j=

80

15

°C

V

°C

V_GE

=

T_j=

T_jmax

Copyright Vincotech

12

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Buck Diode Characteristics

figure 7.

FWD

figure 8.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

0

1750

1500

1250

1000

750

500

250

0

10

-1

10

-2

10

0,5

0,2

0,1

0,05

0,02

0,01

0,005

0

-3

10

-4

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

0,2

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

1,88E-02

4,51E-02

7,10E-02

4,92E-02

1,59E-02

3,84E+00

6,36E-01

9,33E-02

1,96E-02

1,53E-03

Copyright Vincotech

13

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Buck Sw. Protection Diode Characteristics

figure 9.

FWD

figure 10.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

1

60

50

40

30

20

10

0

10

0

10

-1

10

0,5

0,2

0,1

0,05

0,02

0,01

0,005

0

-2

10

-3

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,0

0,5

1,0

1,5

2,0

2,5

3,0

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

1,234

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

6,37E-02

2,23E-01

5,35E-01

2,37E-01

1,75E-01

2,41E+00

9,36E-02

2,00E-02

2,21E-03

2,82E-04

Copyright Vincotech

14

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Boost Switch Characteristics

figure 11.

IGBT

figure 12.

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

1750

V_GE

:

7 V

8 V

9 V

1500

1250

1000

750

500

250

0

1500

1250

1000

750

500

250

0

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

V

_CE(V)

V_CE(V)

t_p

=

t_p

=

250

15

μs

250

150

μs

°C

25 °C

125 °C

150 °C

V_GE

T_j=

V

T_j:

V_GEfrom 7 V to 17 V in steps of 1 V

figure 13.

IGBT

figure 14.

IGBT

Typical transfer characteristics

Transient thermal impedance as a function of pulse width

I_C= f(V_GE

)

Z_th(j-s)= f(t_p)

0

600

10

500

400

300

200

100

0

-1

10

-2

10

0,5

0,2

0,1

0,05

0,02

0,01

0,005

0

-3

10

-4

10

-5

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

0,0

2,5

5,0

7,5

10,0

12,5

10

t_p(s)

V

_GE(V)

t_p

=

250

10

μs

V

D =

t_p/ T

0,152

25 °C

125 °C

150 °C

V_CE

=

R_th(j-s)=

T_j:

K/W

IGBT thermal model values

R (K/W)

τ (s)

9,58E-03

4,22E-02

5,54E-02

3,88E-02

6,10E-03

8,37E+00

1,07E+00

1,25E-01

2,00E-02

6,89E-04

Copyright Vincotech

15

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Boost Switch Characteristics

figure 15.

IGBT

figure 16.

IGBT

Safe operating area

Gate voltage vs gate charge

I_C= f(V_CE

)

V_GE= f(Q_g)

10000

1000

100

10

22,5

20,0

17,5

15,0

12,5

10,0

7,5

100µs

1ms

10ms

100ms

DC

1

5,0

0,1

2,5

0,01

0,0

1

10

100

1000

10000

0

500

25

1000

1500

2000

2500

3000

3500

V

_CE(V)

Q_g(μC)

D =

I_C

=

single pulse

A

T_s=

T_j=

80

15

°C

V

°C

V_GE

=

T_j=

T_jmax

Copyright Vincotech

16

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Boost Diode Characteristics

figure 17.

FWD

figure 18.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

0

1750

1500

1250

1000

750

500

250

0

10

-1

10

-2

10

-3

10

0,5

0,2

0,1

0,05

0,02

0,01

0,005

0

-4

10

-5

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,0

0,5

1,0

μs

1,5

2,0

2,5

3,0

3,5

4,0

10

t_p(s)

V_F(V)

t_p

=

250

D =

t_p/ T

0,186

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

2,79E-02

4,32E-02

5,97E-02

4,70E-02

8,15E-03

3,85E+00

6,60E-01

1,04E-01

2,25E-02

1,69E-03

Copyright Vincotech

17

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Boost Sw. Protection Diode Characteristics

figure 19.

FWD

figure 20.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

1

100

75

50

25

0

10

0

10

-1

10

0,5

0,2

0,1

0,05

0,02

0,01

0,005

0

-2

10

-3

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,0

0,5

1,0

1,5

2,0

2,5

3,0

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

1,135

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

5,28E-02

2,30E-01

5,00E-01

1,99E-01

1,53E-01

2,41E+00

9,67E-02

1,70E-02

2,18E-03

2,04E-04

Copyright Vincotech

18

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Thermistor Characteristics

figure 21.

Thermistor

Typical NTC characteristic as function of temperature

R_T= f(T)

25000

20000

15000

10000

5000

0

20

40

60

80

100

120

140

T(°C)

Copyright Vincotech

19

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Buck Switching Characteristics

figure 22.

IGBT

figure 23.

IGBT

Typical switching energy losses as a function of collector current

Typical switching energy losses as a function of IGBT turn on gate resistor

E = f(I_C)

E = f(R_g)

120

100

80

60

40

20

0

150

125

100

75

E_on

E_off

50

E_off

25

0

200

400

600

800

1000

1200

0

1

2

3

4

5

6

7

8

9

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

125 °C

25 °C

125 °C

T_j:

V_CE

=

V_CE

V_GE

I_C

=

350

±15

1

V

Ω

350

±15

600

V

A

V_GE

R_gon

R_goff

1

figure 24.

FWD

figure 25.

FWD

Typical reverse recovered energy loss as a function of collector current

Typical reverse recovered energy loss as a function of IGBT turn on gate resistor

E_rec= f(I_C)

E_rec= f(R_g)

30

25

20

15

10

5

30

25

20

15

10

5

E_rec

0

200

400

600

800

1000

1200

0

1

2

3

4

5

6

7

8

9

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

125 °C

25 °C

125 °C

T_j:

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

1

V

Ω

350

±15

600

V

A

Copyright Vincotech

20

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Buck Switching Characteristics

figure 26.

IGBT

figure 27.

IGBT

Typical switching times as a function of collector current

Typical switching times as a function of IGBT turn on gate resistor

t = f(I_C)

t = f(R_g)

0

10

1

10

t_d(on)

t_d(off)

t_d(on)

t_d(off)

0

10

t_r

t_f

t_r

-1

10

-1

10

t_f

-2

10

-2

10

0

200

400

600

800

1000

1200

0

1

2

3

4

5

6

7

8

9

I_C(A)

R_g(Ω)

With an inductive load at

T_j=

125

350

±15

1

°C

V

125

350

±15

600

°C

V

V_CE

=

V_CE

=

V_GE

R_gon

R_goff

V_GE

I_C

V

Ω

A

1

figure 28.

FWD

figure 29.

FWD

Typical reverse recovery time as a function of collector current

Typical reverse recovery time as a function of IGBT turn on gate resistor

t_rr= f(I_C)

t_rr= f(R_gon)

1,2

1,0

0,8

0,6

0,4

0,2

0,0

1,50

1,25

1,00

0,75

0,50

0,25

0,00

t_rr

0

200

400

600

800

1000

1200

0

1

2

3

4

5

6

7

8

9

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

125 °C

25 °C

125 °C

T_j:

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

1

V

Ω

350

±15

600

V

A

Copyright Vincotech

21

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Buck Switching Characteristics

figure 30.

FWD

figure 31.

FWD

Typical recovered charge as a function of collector current

Typical recovered charge as a function of IGBT turn on gate resistor

Q_r= f(I_C)

Q_r= f(R_gon)

150

125

100

75

120

100

80

60

40

20

0

Q_r

50

Q_r

25

0

200

400

600

800

1000

1200

0

1

2

3

4

5

6

7

8

9

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

125 °C

25 °C

125 °C

T_j:

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

1

V

Ω

350

±15

600

V

A

figure 32.

FWD

figure 33.

FWD

Typical peak reverse recovery current as a function of collector current

Typical peak reverse recovery current as a function of IGBT turn on gate resistor

I_RM= f(I_C)

I_RM= f(R_gon)

400

350

300

250

200

150

100

50

500

400

300

200

100

0

I_RM

0

200

400

600

800

1000

1200

0

1

2

3

4

5

6

7

8

9

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

125 °C

25 °C

125 °C

T_j:

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

1

V

Ω

350

±15

600

V

A

Copyright Vincotech

22

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Buck Switching Characteristics

figure 34.

FWD

figure 35.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor

di_F/dt, di_rr/dt = f(I_C)

di_F/dt, di_rr/dt = f(R_gon)

12000

15000

12500

10000

7500

5000

2500

0

di_F/dt ‒ ‒ ‒ ‒ ‒

di_rr/dt ──────

10000

8000

6000

4000

2000

0

200

400

600

800

1000

1200

I_C(A)

0

1

2

3

4

5

6

7

8

9

R_gon(Ω)

With an inductive load at

25 °C

125 °C

25 °C

125 °C

T_j:

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

1

V

Ω

350

±15

600

V

A

figure 36.

IGBT

Reverse bias safe operating area

I_C= f(V_CE

)

1500

I_{C MAX}

1250

1000

750

500

250

0

250

500

750

1000

1250

1500

V

_CE(V)

T_j=

At

125

°C

Ω

R_gon

R_goff

=

1

Ω

Copyright Vincotech

23

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Boost Switching Characteristics

figure 37.

IGBT

figure 38.

IGBT

Typical switching energy losses as a function of collector current

Typical switching energy losses as a function of IGBT turn on gate resistor

E = f(I_C)

E = f(R_g)

60

50

40

30

20

10

0

125

100

75

50

25

0

E_on

E_off

E_on

E_off

0

200

400

600

800

1000

1200

0

1

2

3

4

5

6

7

8

9

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

125 °C

25 °C

125 °C

T_j:

V_CE

=

V_CE

V_GE

I_C

=

350

±15

1

V

Ω

350

±15

600

V

A

V_GE

R_gon

R_goff

1

figure 39.

FWD

figure 40.

FWD

Typical reverse recovered energy loss as a function of collector current

Typical reverse recovered energy loss as a function of IGBT turn on gate resistor

E_rec= f(I_C)

E_rec= f(R_g)

20,0

17,5

15,0

12,5

10,0

7,5

25

20

15

10

5

E_rec

5,0

2,5

0,0

0

250

500

750

1000

1250

0

1

2

3

4

5

6

7

8

9

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

125 °C

25 °C

125 °C

T_j:

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

1

V

Ω

350

±15

600

V

A

Copyright Vincotech

24

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Boost Switching Characteristics

figure 41.

IGBT

figure 42.

IGBT

Typical switching times as a function of collector current

Typical switching times as a function of IGBT turn on gate resistor

t = f(I_C)

t = f(R_g)

0

10

1

10

t_d(on)

t_d(off)

t_d(on)

t_d(off)

0

10

t_r

t_f

-1

10

t_r

-1

10

t_f

-2

10

-2

10

0

250

500

750

1000

1250

0

1

2

3

4

5

6

7

8

9

I_C(A)

R_g(Ω)

With an inductive load at

T_j=

125

350

±15

1

°C

V

125

350

±15

600

°C

V

V_CE

=

V_CE

=

V_GE

R_gon

R_goff

V_GE

I_C

V

Ω

A

1

figure 43.

FWD

figure 44.

FWD

Typical reverse recovery time as a function of collector current

Typical reverse recovery time as a function of IGBT turn on gate resistor

t_rr= f(I_C)

t_rr= f(R_gon)

0,7

0,6

0,5

0,4

0,3

0,2

0,1

0,0

0,9

0,8

0,7

0,6

0,5

0,4

0,3

0,2

0,1

0,0

t_rr

0

250

500

750

1000

1250

0

1

2

3

4

5

6

7

8

9

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

125 °C

25 °C

125 °C

T_j:

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

1

V

Ω

350

±15

600

V

A

Copyright Vincotech

25

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Boost Switching Characteristics

figure 45.

FWD

figure 46.

FWD

Typical recovered charge as a function of collector current

Typical recovered charge as a function of IGBT turn on gate resistor

Q_r= f(I_C)

Q_r= f(R_gon)

120

100

80

60

40

20

0

90

80

70

60

50

40

30

20

10

0

Q_r

0

250

500

750

1000

1250

0

1

2

3

4

5

6

7

8

9

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

125 °C

25 °C

125 °C

T_j:

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

1

V

Ω

350

±15

600

V

A

figure 47.

FWD

figure 48.

FWD

Typical peak reverse recovery current as a function of collector current

Typical peak reverse recovery current as a function of IGBT turn on gate resistor

I_RM= f(I_C)

I_RM= f(R_gon)

500

400

300

200

100

0

600

500

400

300

200

100

0

I_RM

0

250

500

750

1000

1250

0

1

2

3

4

5

6

7

8

9

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

125 °C

25 °C

125 °C

T_j:

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

1

V

Ω

350

±15

600

V

A

Copyright Vincotech

26

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Boost Switching Characteristics

figure 49.

FWD

figure 50.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor

di_F/dt, di_rr/dt = f(I_C)

di_F/dt, di_rr/dt = f(R_gon)

12000

17500

15000

12500

10000

7500

5000

2500

0

di_F/dt ‒ ‒ ‒ ‒ ‒

di_rr/dt ──────

10000

8000

6000

4000

2000

0

250

500

750

1000

1250

I_C(A)

0

1

2

3

4

5

6

7

8

9

R_gon(Ω)

With an inductive load at

25 °C

125 °C

25 °C

125 °C

T_j:

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

1

V

Ω

350

±15

600

V

A

figure 51.

IGBT

Reverse bias safe operating area

I_C= f(V_CE

)

1500

I_{C MAX}

1250

1000

750

500

250

0

100

200

300

400

500

600

700

800

V

_CE(V)

T_j=

At

125

1

°C

Ω

R_gon

R_goff

=

1

Ω

Copyright Vincotech

27

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Switching Definitions

figure 52.

IGBT

figure 53.

IGBT

Turn-off Switching Waveforms & definition of t_doff, t_Eoff(t_tEoff= integrating time for E_off

)

Turn-on Switching Waveforms & definition of t_don, t_Eon(t_Eon= integrating time for E_on)

t_doff

%

V_{GE 90%}

V_{CE 90%}

I_C

V_GE

V_CE

t_don

t_Eoff

I_{C 1%}

V_{CE 3%}

V_CE

I_{C 10%}

V_{GE 10%}

t_Eon

t (µs)

figure 54.

IGBT

figure 55.

IGBT

Turn-off Switching Waveforms & definition of t_f

Turn-on Switching Waveforms & definition of t_r

fitted

%

I_C

I_{C 90%}

I_{C 60%}

V_CE

I_{C 90%}

I_{C 40%}

t_r

I_C10%

V_CE

C 10%

t_f

t (µs)

Copyright Vincotech

28

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Switching Definitions

figure 56.

FWD

figure 57.

FWD

Turn-off Switching Waveforms & definition of t_rr

Turn-on Switching Waveforms & definition of t_Qr(t_Qr= integrating time for Q_r)

%

Q_r

t_rr

t_Qr

I_F

fitted

RRM 10%

V_F

RRM 90%

RRM 100%

t (µs)

Copyright Vincotech

29

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Ordering Code

Marking

Version

Ordering Code

Without thermal paste

With thermal paste (3,4 W/mK, PSX-P7)

70-W212NMA600M7-LC09F71

70-W212NMA600M7-LC09F71-/3/

Name

Date code

UL & VIN

Lot

Serial

Text

NN-NNNNNNNNNNNNNN-

TTTTTTVV

WWYY

UL VIN

LLLLL

SSSS

Type&Ver

Lot number

Serial

Date code

Datamatrix

TTTTTTTVV

LLLLL

SSSS

WWYY

Outline

Driver pins

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

X1

4,5

Y1

Function

G11-1

78,65

81,55

78,65

81,55

30,15

68,4

44,65

46

4,5

S11-1

39,5

19,45

24,55

1,95

4,85

39,15

G11-2

S11-2

DC+desat

S14-1

G14-1

G14-2

1.10 42,05

1.11 19,45

1.12 24,55

1.13

1.14

1.15

1.16

1.17

1.18

1.19 50,75

1.20 50,75

1.21 67,65

1.22 67,65

S14-2

GND_desat

G13-1

-2,2

46,2

-6,75

48,9

46

S13-1

G13-2

48,9

29,2

32,1

29,2

32,1

86,7

89,8

S13-2

S12-1

G12-1

S12-2

G12-2

Therm2

Therm1

Power interconnections

M6 screw

2.1

X2

0

Y2

0

Function

Phase

DC+

2.2

22

44

0

2.3

2.4

0

110,4

2.5

2.6

22

44

GND

DC-

Low current connections

M4 screw

3.1

3.2

3.3

3.4

3.5

3.6

3.7

3.8

X3

Y3

Function

DC+

EH

-37,4

81,4

-37,4

81,4

-37,4

81,4

-37,4

81,4

89,8

65,2

45,2

20,6

EH

Phase

DC-

Copyright Vincotech

30

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Pinout

DC+

n = 1-2

DC+desat

T11-n

D13

D41

C10

G11-n

S11-n

G14-n

S14-n

T14-n

D11

D43

Phase

i

D44

D12

Ph

i

GND

EH

T13-n

G13-n

GND_desat

S13-n

DC+

GND

D14

D42

T12-n

C20

EH

G12-n

S12-n

Phase

DC-

Rt

Low current connections

DC-

Therm1

Therm2

NOTE: Driver pins for parallel devices are not connected inside the module!

Identification

Component

Voltage

Current

Function

Comment

ID

T11, T12

D11, D12

D41, D42

T13, T14

D13, D14

D43, D44

C10, C20

Rt

IGBT

FWD

IGBT

FWD

Capacitor

NTC

1200 V

650 V

1200 V

650 V

1200 V

650 V

630 V

600 A

20 A

600 A

40 A

Buck Switch

Buck Diode

Buck Sw. Protection Diode

Boost Switch

Boost Diode

Boost Sw. Protection Diode

Capacitor (DC)

Thermistor

Copyright Vincotech

31

15 Jul. 2022 / Revision 3

70-W212NMA600M7-LC09F71

datasheet

Packaging instruction

Handling instruction

Standard packaging quantity (SPQ) 8

>SPQ

Standard

<SPQ

Sample

Handling instructions for VINco X4 packages see vincotech.com website.

Package data

Package data for VINco X4 packages see vincotech.com website.

Vincotech thermistor reference

See Vincotech thermistor reference table at vincotech.com website.

UL recognition and file number

This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.

Document No.:

Date:

Modification:

Pages

New Datasheet format, module is unchanged

Correct tau values of thermal characteristic

70-W212NMA600M7-LC09F71-D3-14

15 Jul. 2022

DISCLAIMER

The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to

reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations

that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,

function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said

information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons

or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine

the suitability of the information and the product for reader’s intended use.

LIFE SUPPORT POLICY

Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval

of Vincotech.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or

sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be

reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or effectiveness.

Copyright Vincotech

32

15 Jul. 2022 / Revision 3


型号：	70-W212NMA600M7-LC09F71
厂家：	VINCOTECH
描述：	Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
文件：	总32页 (文件大小：9356K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

70-W212NMA600M7-LC09F71 [VINCOTECH]

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