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FMOSAB45P03-H

更新时间：2025-06-30 11:17:29

品牌：FORMOSA

描述：Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : -30; ID(A) : -45; PD(W) : 23; EAS(mJ) : 7

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概述
数据手册

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FMOSAB45P03-H 概述

Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : -30; ID(A) : -45; PD(W) : 23; EAS(mJ) : 7

FMOSAB45P03-H 数据手册

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P-Channel SMD Power MOSFET

Formosa MS

FMOSAB45P03

List

List.................................................................................................

Package outline...............................................................................

Features..........................................................................................

Mechanical data...............................................................................

Maximum ratings .............................................................................

Electrical characteristics...................................................................

Rating and characteristic curves......................................................4~5

Pinning information..........................................................................

Marking...........................................................................................

Suggested solder pad layout.............................................................

Packing information..........................................................................

Reel packing....................................................................................

Suggested thermal profiles for soldering processes.............................

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

DS-2311H99

Issued Date

2020/03/17

Revised Date

Revision

Page

Page 1

P-Channel SMD Power MOSFET

Formosa MS

FMOSAB45P03

-45A, -30V, N-Channel MOSFET

Package outline

Features

• -V_DS=30V, -I_D=45A

T3333P8

• R_DS(ON)< 7.5mΩ @-V_GS=10V.

• R_DS(ON)< 12.6mΩ @-V_GS=4.5V.

• Advanced trech technology .

0.031(0.80)

0.028(0.70)

• Excellent R_DS(ON)and low gate charge.

• Lead-free parts meet RoHS requirements.

• Suffix "-H" dinicate Halogen-free part, ex.FMOSAB45P03-H.

10^o~14^o

0.006(0.15) Max.

Application

• PWM Applications.

• Load switch.

0.010(0.25)

0.004(0.10)

• Power management.

0.026(0.65)BSC

0.104(2.65)

0.090(2.29)

0.026(0.65)

0.011(0.28)

Mechanical data

• Epoxy:UL94-V0 rated flame retardant

• Case : Molded plastic, T3333P8

• Mounting Position : Any

0.076(1.94)

0.060(1.54)

0.134(3.40)

0.126(3.20)

0.012(0.30)

0.030(0.77)

0.004(0.10)

0.015(0.37)

0.002(0.05)

0.000(0.00)

• Weight : Approximated 0.02 gram

0.035(0.89)

0.023(0.59)

0.020(0.50)

0.012(0.30)

0.016(0.40)

0.008(0.20)

Dimensions in inches and (millimeters)

Maximum ratings ^{(At T}_j⁼²⁵^o^{C unless otherwise noted)}

Parameter

Drain-source voltage

Symbol

Ratings

Unit

-V_DS

V_GS

±20

Gate-source voltage

Continuous drain Current - Continuous ^(T_C⁼²⁵℃)

- Continuous ^(T_C⁼¹⁰⁰℃)

-I_D

Pulsed drain current ^{(Note 1)}

-I_DM

E_AS

P_D

180

Single pulse avalanche energy ^{(Note 2)}

75.7

Power dissipation

(T_C=25℃)

Operating Junction temperature range

Storage temperature range

T_j

+150

-55 to +150

5.4

℃

T_STG

R_θJC

℃

Thermal resistance Junction to case

℃/W

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

DS-2311H99

Issued Date

2020/03/17

Revised Date

Revision

Page

Page 2

P-Channel SMD Power MOSFET

Formosa MS

FMOSAB45P03

Electrical characteristics ^{(At T}_j⁼²⁵^o^{C unless otherwise noted)}

Parameter

Symbol

Conditions

Min. Typ. Max. Unit

Off characteristics

Drain-source breakdown voltage

Drain-source leakage current

Gate-source leakage current

On characteristics

-BV_DSS

-I_DSS

-I_D=250µA, V_GS=0V

-V_DS=30V, V_GS=0V

V_GS=±20V, V_DS=0V

1.0

µA

I_GSS

±100

Gate threshold voltage

-V_GS(TH)

R_DS(ON)

V_GS=V_DS, -I_D=250µA

-V_GS=10V, -I_D=30A

-V_GS=4.5V, -I_D=20A

1.0

1.5

5.8

2.5

7.5

Static drain-source on-resistance ^{(Note 4)}

mΩ

12.6

Dynamic parameters ^{(Note 5)}

Input capacitance

C_iss

C_oss

C_rss

4650

550

Out capacitance

V_GS=0V, -V_DS=15V, f=1.0MHz

Reverse transfer capacitance

Switching parameters

Total gate charge

486

Q_g

Q_gs

Q_gd

t_d(on)

t_r

Gate to source charge

Gate to drain charge

Turn-on delay time

Rise time

-V_GS=10V, -V_DS=15V, -I_D=20A

-V_DS=15V, -V_GS=10V, R_G=2.5Ω, -I_D=30A

Turn-off delay time

Fall time

t_d(off)

t_f

Source-drain diode ratings and characteristics

Drain-source diode forward voltage

-V_SD

-I_S

-I_S=30A, V_GS=0V

0.8

1.2

Maximum continuous drain to source current

Maximum pulse drain to source current

-I_SM

180

Note : 1. Repetitive rating : Pulse width limited by maximum junction temperature.

2. E_AScondition : T_j=25℃, -V_DD=20V, -V_G=10V, L=0.5mH, R_G=25Ω, -I_AS=17.4A.

3. Pulse test ( pulse width ≤ 300μs, duty cycle ≤ 2%).

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

DS-2311H99

Issued Date

2020/03/17

Revised Date

Revision

Page

Page 3

Rating and characteristic curves (FMOSAB45P03)

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

DS-2311H99

Issued Date

2020/03/17

Revised Date

Revision

Page

Page 4

Rating and characteristic curves (FMOSAB45P03)

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

DS-2311H99

Issued Date

2020/03/17

Revised Date

Revision

Page

Page 5

P-Channel SMD Power MOSFET

Formosa MS

FMOSAB45P03

Pinning information

Simplified outline

Symbol

Pin1 Source

Pin2 Source

Pin3 Source

Pin4 Gate

Pin5 Drain

Pin6 Drain

Pin7 Drain

Pin8 Drain

(Pin：5,6,7,8)

(Pin：4)

(Pin：1,2,3)

Marking

Type number

Marking code

FMOSAB45P03

AB45P03

Suggested solder pad layout

2.80

0.40

0.65

Note:

1.Controlling dimension:in millimeters.

2.General tolerance:±0.05mm.

3.The pad layout is for reference purposes only.

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

DS-2311H99

Issued Date

2020/03/17

Revised Date

Revision

Page

Page 6

P-Channel SMD Power MOSFET

Formosa MS

FMOSAB45P03

Packing information

P⁰

P¹

•

D²

D¹

W¹

unit:mm

Symbol

T3333P8

Item

Tolerance

Carrier width

Carrier length

Carrier depth

Sprocket hole

0.1

2.0

min

2.0

min

0.5

0.1

0.3

1.0

3.55

1.10

1.50

330.00

100.00

13" Reel outside diameter

13" Reel inner diameter

7" Reel outside diameter

7" Reel inner diameter

Feed hole diameter

Sprocket hole position

Punch hole position

Punch hole pitch

D¹

D²

13.00

1.75

5.50

8.00

4.00

2.00

0.23

12.00

17.60

Sprocket hole pitch

Embossment center

Overall tape thickness

Tape width

P⁰

P¹

W¹

Reel width

Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

DS-2311H99

Issued Date

2020/03/17

Revised Date

Revision

Page

Page 7

P-Channel SMD Power MOSFET

Formosa MS

FMOSAB45P03

Reel packing

COMPONENT

SPACING

INNER

BOX

(m/m)

REEL

DIA,

(m/m)

CARTON

SIZE

(m/m)

REEL

(pcs)

BOX

(pcs)

PACKAGE

T3333P8

CARTON

(pcs)

REEL SIZE

13"

(m/m)

5,000

8.0

10,000

355*335*38

330

350*330*360

80,000

Suggested thermal profiles for soldering processes

1.Storage environment : Temperature=5℃~40℃ Humidity=55%±25%

2.Reflow soldering of surface-mount devices

Critical Zone

T_Lto T_P

T_P

Ramp-up

T_L

T_smax

T_smin

t_S

Preheat

Ramp-down

t25℃ to Peak

3.Reflow soldering

Profile feature

Soldering Condition

Average ramp-up rate (T_LtoT_P)

<3℃/sec

Prehaeat

-Temperature Min (T_smin

-Temperature Max (T_smax

-Time (min to max) (t_S)

)

150℃

200℃

60 ~120sec

)

T_smaxto T_L

-Ramp-up rate

< 3℃/sec

Time maintained above:

-Temperature (T_L)

-Time(T_L)

217℃

60 ~ 260 sec

Peak Temperature(T_P)

255℃ -0/+5℃

10 ~ 30sec

Time within 5℃ of actual peak

Temperature(T_P)

Ramp-down rate

< 6℃/sec

< 6 minutes

Time 25℃ to peak temperature

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

DS-2311H99

Issued Date

2020/03/17

Revised Date

Revision

Page

Page 8

FMOSAB45P03-H 相关器件

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