功率双极晶体管
图片 型号 文档 类别 描述 品牌 供应商
2N3488 功率双极晶体管 Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin,
2N3489 功率双极晶体管 Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin,
2N3489E3 功率双极晶体管 Power Bipolar Transistor, 7.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN
2N3490 功率双极晶体管 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin,
2N3491E3 功率双极晶体管 Power Bipolar Transistor, 7.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN
2N3492E3 功率双极晶体管 Power Bipolar Transistor, 7.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN
2N3551 功率双极晶体管 12A, 60V, NPN, Si, POWER TRANSISTOR
2N3552 功率双极晶体管 12A, 80V, NPN, Si, POWER TRANSISTOR
2N3583 功率双极晶体管 Bipolar NPN Device in a Hermetically sealed TO66
在一个密封TO66双极NPN装置
2N3583 功率双极晶体管 SPRINGFIELD, NEW JERSEY 07081
SPRINGFIELD ,新泽西州07081
2N3583 功率双极晶体管 5 Amp, 250V, High Voltage NPN Silicon Power Transistors
5安培, 250V ,高压硅NPN功率晶体管
2N3583 功率双极晶体管 Power Transistors
功率晶体管
2N3584 功率双极晶体管 SPRINGFIELD, NEW JERSEY 07081
SPRINGFIELD ,新泽西州07081
2N3584 功率双极晶体管 5 Amp, 375V, High Voltage NPN Silicon Power Transistors
5安培, 375V ,高压硅NPN功率晶体管
2N3584 功率双极晶体管 Power Transistors
功率晶体管
2N3584X 功率双极晶体管 Bipolar NPN Device in a Hermetically sealed TO66
在一个密封TO66双极NPN装置
2N3585 功率双极晶体管 5 Amp, 500V, High Voltage NPN Silicon Power Transistors
5安培, 500V ,高压硅NPN功率晶体管
2N3585 功率双极晶体管 Power Transistors
功率晶体管
2N3585LEADFREE 功率双极晶体管 Power Bipolar Transistor, 2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
2N3619 功率双极晶体管 Power Bipolar Transistor, 2.5A I(C), 40V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin
2N3620 功率双极晶体管 Power Bipolar Transistor, 2.5A I(C), 40V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN
2N3620E3 功率双极晶体管 Power Bipolar Transistor, 2.5A I(C), 40V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN
2N3621 功率双极晶体管 Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN
2N3622 功率双极晶体管 Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN
2N3623 功率双极晶体管 Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin
2N3627 功率双极晶体管 Power Bipolar Transistor, 2.5A I(C), 50V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin
2N3628 功率双极晶体管 Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin,
2N3628 功率双极晶体管 Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN
2N3628E3 功率双极晶体管 Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN
2N3629 功率双极晶体管 Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin,
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什么是功率双极晶体管

    功率双极晶体管(Bipolar Junction Transistor,简称BJT),是一种基于半导体材料的电子元件。它可以被用作放大器、开关和其他电路中的信号处理部件。 功率双极晶体管中,集电区和发射区构成了一个PN结,而基区夹在这两者之间。当一个电压被施加在基区时,它能够控制PN结的电阻,从而控制电流流过晶体管。这个过程叫做“注入”(injection),并且它使得电流能够受到控制,从而使晶体管可以用作放大器或开关。