功率双极晶体管
图片 型号 文档 类别 描述 品牌 供应商
2N3630 功率双极晶体管 Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin,
2N3630E3 功率双极晶体管 Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN
2N3659 功率双极晶体管 Power Bipolar Transistor, 0.5A I(C), 170V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN
2N3660 功率双极晶体管 Small Signal Transistors
小信号晶体管
2N3660LEADFREE 功率双极晶体管 Power Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, Metal, 3 Pin, TO-39, 3 PIN
2N3661 功率双极晶体管 Small Signal Transistors
小信号晶体管
2N3661 功率双极晶体管 Transistor
2N3661E3 功率双极晶体管 Power Bipolar Transistor, 1.5A I(C), 50V V(BR)CEO, PNP, Silicon, TO-5, Metal, 3 Pin,
2N3661LEADFREE 功率双极晶体管 Power Bipolar Transistor, 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, Metal, 3 Pin, TO-39, 3 PIN
2N3665 功率双极晶体管 Power Bipolar Transistor, 1A I(C), 1-Element, NPN, Silicon, TO-39, Metal, 3 Pin, TO-39, 3 PIN
2N3675E3 功率双极晶体管 Power Bipolar Transistor, 3A I(C), 55V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN
2N3676 功率双极晶体管 Bipolar NPN Device in a Hermetically sealed TO39 Metal Package
在一个密封TO39金属封装的双极NPN装置
2N3676 功率双极晶体管 Power Bipolar Transistor, 3A I(C), 90V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN
2N3676E3 功率双极晶体管 Power Bipolar Transistor, 3A I(C), 90V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN
2N3713 功率双极晶体管 Bipolar NPN Device in a Hermetically sealed TO3
在一个密封TO3双极NPN装置
2N3713 功率双极晶体管 NPN SILICON POWER TRANSISTORS
NPN硅功率晶体管
2N3713 功率双极晶体管 Power Bipolar Transistor, 10A I(C), 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
2N3713 功率双极晶体管 60V,10A,150W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
2N3713SMD 功率双极晶体管 Bipolar NPN Device in a Hermetically sealed
在密封双极NPN装置
2N3714 功率双极晶体管 Bipolar NPN Device in a Hermetically sealed TO3
在一个密封TO3双极NPN装置
2N3714 功率双极晶体管 80V,10A,150W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
2N3714LEADFREE 功率双极晶体管 Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
2N3714SMD 功率双极晶体管 Bipolar NPN Device in a Hermetically sealed
在密封双极NPN装置
2N3715 功率双极晶体管 Bipolar NPN Device in a Hermetically sealed TO3
在一个密封TO3双极NPN装置
2N3715 功率双极晶体管 10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS
10安培功率晶体管NPN硅60.80伏150瓦
2N3715 功率双极晶体管 NPN HIGH POWER SILICON TRANSISTOR
NPN大功率硅晶体管
2N3715 功率双极晶体管 Trans GP BJT NPN 60V 10A 3-Pin(2+Tab) TO-3 Sleeve
2N3716 功率双极晶体管 80V,10A,150W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
2N3716LEADFREE 功率双极晶体管 Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
2N3716SMD 功率双极晶体管 Bipolar NPN Device in a Hermetically sealed
在密封双极NPN装置
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什么是功率双极晶体管

    功率双极晶体管(Bipolar Junction Transistor,简称BJT),是一种基于半导体材料的电子元件。它可以被用作放大器、开关和其他电路中的信号处理部件。 功率双极晶体管中,集电区和发射区构成了一个PN结,而基区夹在这两者之间。当一个电压被施加在基区时,它能够控制PN结的电阻,从而控制电流流过晶体管。这个过程叫做“注入”(injection),并且它使得电流能够受到控制,从而使晶体管可以用作放大器或开关。