功率双极晶体管
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其他晶体管
射频双极晶体管
IGBT
小信号双极晶体管
功率场效应晶体管
功率双极晶体管
小信号场效应晶体管
射频小信号双极晶体管
单结晶体管
射频小信号场效应晶体管
射频场效应晶体管
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| 图片 | 型号 | 文档 | 类别 | 描述 | 品牌 | 供应商 | |
| 2N3176 |  |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin, |  |
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| 2N3177 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin, | |
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| 2N3177E3 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin, |  |
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| 2N3178 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin | |
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| 2N3178E3 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin, | |
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| 2N3183 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin | |
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| 2N3183 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, | |
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| 2N3184 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin | |
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| 2N3184E3 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
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| 2N3185 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin | |
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| 2N3185 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, | |
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| 2N3185E3 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
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| 2N3186 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin | |
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| 2N3186 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, | |
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| 2N3187 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin | |
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| 2N3187 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin, | |
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| 2N3187E3 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin, | |
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| 2N3188 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin | |
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| 2N3189 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin | |
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| 2N3190 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin | |
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| 2N3190E3 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin, | |
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| 2N3195 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin | |
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| 2N3195 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, | |
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| 2N3195E3 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
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| 2N3196 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin | |
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| 2N3196 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, | |
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| 2N3197 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin | |
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| 2N3197E3 | |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
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2N3202 | |
功率双极晶体管 | Bipolar PNP Device in a Hermetically sealed TO39 Metal Package 在一个密封TO39金属封装的双极PNP设备 |
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| 2N3202 | |
功率双极晶体管 | Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, PNP, Silicon, TO-5, Metal, 3 Pin | |
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功率双极晶体管 热门型号
- 2SD2589Y
- 2SD2469AP
- 2SD2449-A
- 2SD2466AQ
- 2SD2440-BL
- 2SD526-O
- 2SD476(K)
- 2SD970K-E
- 2SD882-R-BP
- 2SD880-Y-BP-HF
- 2SD669A-B-BP-HF
- 2SD2399K
- 2SD2165-M-AZ
- 2SD2562P
- 2SD880YP
- 2SD669A-C-BP-HF
- 2SD2561Y
- 2SD2384-A
- 2SD882-BP
- 2SD2164-M-AZ
- 2SD2420AP
- 2SD2643O
- 2SD2163-AZ
- 2SD2396/H
- 2SD2395/F
- 2SD2466P
- 2SD2122(S)TR
- 2SD476KC
- 2SD2242AP
- 2SD476A(K)C
- 2SD2162-L
- 2SD2091K
- 2SD476A(K)B
- 2SD2394/F
- 2SD2467Q
- 2SD1961/RS
- 2SD1944/K
- 2SD2337C-E
- 2SD2440-V
- 2SD2166/Q
- 2SD2403-GY-AZ
- 2SD1818-K
- 2SD2101-E
- 2SD1778A/DF
- 2SD2061/F
- 2SD1771ATX
- 2SD2166/QR
- 2SD2165-AZ
- 2SD2162-AZ
- 2SD2061/E
- 2SD2562Y
- 2SD1961/S
- 2SD2023/DE
- 2SD1961/QR
- 2SD2495Y
- 2SD1750TX
- 2SD2012-BP
- 2SD2420A
- 2SD2391T100/PQ
- 2SD2400/F
- 2SD1897/DF
- 2SD2389Y
- 2SD2394/DF
- 2SD1985APQ
- 2SD2163-K
- 2SD2123(S)TR
- 2SD1832/E
- 2SD1562A/D
- 2SD1538TX
- 2SD2123(S)TL
- 2SD1975AS
- 2SD1775ATX
- 2SD1766T100/PR
- 2SD1750AH
- 2SD1744TX
- 2SD2163-J
- 2SD2165-K-AZ
- 2SD2155-R
- 2SD1694-L
- 2SD1932K
- 2SD1778D
- 2SD1741H
- 2SD1580/EF
- 2SD1506/PR
- 2SD1481-M
- 2SD1896/CD
- 2SD1412O
- 2SD1411Y
- 2SD1855/DF
- 2SD1763/DE
- 2SD1985PQ
- 2SD1766T100/PQ
- 2SD1778A/E
- 2SD1258H
- 2SD1747H
- 2SD1720D
- 2SD2023D
- 2SD1896/BC
- 2SD1481-K
- 2SD1580/F
什么是功率双极晶体管
- 功率双极晶体管（Bipolar Junction Transistor，简称BJT），是一种基于半导体材料的电子元件。它可以被用作放大器、开关和其他电路中的信号处理部件。
功率双极晶体管中，集电区和发射区构成了一个PN结，而基区夹在这两者之间。当一个电压被施加在基区时，它能够控制PN结的电阻，从而控制电流流过晶体管。这个过程叫做“注入”（injection），并且它使得电流能够受到控制，从而使晶体管可以用作放大器或开关。