SMG2307PE_15 [SECOS]
P-Channel Elektronische Bauelemente Enhancement MOSFET;
| 型号： | SMG2307PE_15 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | P-Channel Elektronische Bauelemente Enhancement MOSFET |
| 文件： | 总4页 (文件大小：473K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMG2307PE
-5.2 A, -20 V, RDS(ON) 31 mΩ
P-Channel Enhancement MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SC-59
These miniature surface mount MOSFETs utilize a high
A
cell density trench process to provide low RDS(on) and to
ensure minimal power loss and heat dissipation. Typical
applications are DC-DC converters and power management
in portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
L
3
3
Top View
C B
1
1
2
2
K
F
E
D
FEATURES
H
J
G
ꢀ
Low RDS(on) provides higher efficiency and extends
battery life.
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
0.10 REF.
0.40 REF.
Max.
A
B
C
D
2.70
2.25
1.30
1.00
3.10
3.00
1.70
1.40
G
H
J
ꢀ
Low thermal impedance copper leadframe SC-59
saves board space.
0.10
0.45
0.20
0.55
K
ꢀ
ꢀ
Fast switching speed.
High performance trench technology.
E
F
1.70
0.35
2.30
0.50
L
0.85
1.15
PACKAGE INFORMATION
Package
MPQ
3K
Leader Size
SC-59
7’ inch
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter Symbol
Rating
-20
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
V
V
±10
TA=25°C
TA=70°C
-5.2
Continuous Drain Current 1
Pulsed Drain Current 2
ID
A
-4.3
IDM
IS
-20
A
A
Continuous Source Current (Diode Conduction) 1
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
-1.9
1.3
Power Dissipation 1
PD
W
°C
0.8
TJ, TSTG
-55 ~ 150
Thermal Resistance Data
t ≦ 10 sec
RθJA
Steady-State
100
166
Maximum Junction to Ambient 1
°C/W
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Oct-2012 Rev. A
Page 1 of 4
SMG2307PE
-5.2 A, -20 V, RDS(ON) 31 mΩ
P-Channel Enhancement MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min
Typ Max Unit
Test Conditions
Static
-0.3
-0.55
-
±10
-1
-10
-
Gate-Threshold Voltage
VGS(th)
IGSS
V
VDS = VGS, ID = -250µA
VDS = 0V, VGS= ±10V
VDS = -16V, VGS= 0V
-
-
Gate-Body Leakage
µA
-
-
Zero Gate Voltage Drain Current
On-State Drain Current 1
IDSS
µA
-
-
VDS = -16V, VGS= 0V, TJ=55°C
VDS = -5V, VGS= -4.5V
VGS= -4.5V, ID = -4.2A
VGS= -2.5V, ID = -3.5A
VGS= -1.8V, ID = -3.1A
-10
-
ID(ON)
A
-
-
-
-
-
-
-
-
31
44
56
83
-
Drain-Source On-Resistance 1
RDS(ON)
mΩ
-
-
V
GS= -1.5V, ID = -2.6A
Forward Transconductance 1
Diode Forward Voltage
gFS
S
V
VDS= -10V,,ID = -4.2A
IS= -0.95A, VGS=0
20
-0.7
-
VSD
Dynamic 2
-
-
-
-
-
-
-
-
-
-
826
-
-
-
-
-
-
-
-
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
VDS= -15V
VGS=0
f=1MHz
96
46
pF
nC
18
ID= -4.2A
VDS= -10V
VGS= -4.5V
4.8
3.1
81
Qgs
Qgd
Td(ON)
Tr
ID= -4.2A,
RL=2.4Ω
VDS= -10V
VGEN= -4.5V
RGEN= 6Ω
163
785
397
nS
Turn-Off Delay Time
Td(OFF)
Tf
Fall Time
Notes:
1.
2.
Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Oct-2012 Rev. A
Page 2 of 4
SMG2307PE
-5.2 A, -20 V, RDS(ON) 31 mΩ
P-Channel Enhancement MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Oct-2012 Rev. A
Page 3 of 4
SMG2307PE
-5.2 A, -20 V, RDS(ON) 31 mΩ
P-Channel Enhancement MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Oct-2012 Rev. A
Page 4 of 4
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