SMG2309 [SECOS]
P-Channel Enhancement Mode Power Mos.FET; P沟道增强模式电源Mos.FET
| 型号： | SMG2309 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | P-Channel Enhancement Mode Power Mos.FET |
| 文件： | 总4页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMG2309
-3.7A, -30V,RDS(ON) 75m
Ω
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SC-59
Min
A
Description
Dim
A
Max
3.10
1.60
1.30
0.50
2.10
0.10
0.26
0.60
1.15
2.80
L
The SMG2309 provide the designer with the best
combination of fast switching, low on-resistance
and cost-effectiveness.
2.70
1.40
1.00
0.35
1.70
0.00
0.10
0.20
0.85
2.40
3
B
S
B
Top View
2
1
C
The SMG2309 is universally preferred for all commercial
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
D
D
G
H
G
J
Features
J
C
K
K
* Simple drive requirement
* Small package outline
H
L
Drain
S
Gate
All Dimension in mm
Applications
D
Source
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
G
Marking : 2309
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
VDS
Ratings
Unit
V
-30
±20
-3.7
-3.0
-12
Gate-Source Voltage
VGS
V
Continuous Drain Current 3
Continuous Drain Current 3
Pulsed Drain Current
ID@TA=25 C
A
C
ID@TA=70
IDM
A
A
PD@TA=25
C
Total Power Dissipation
1.38
0.01
W
W/ C
Linear Derating Factor
-55~+150
Tj, Tstg
C
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-ambient3
C /W
Rthj-a
90
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
SMG2309
Ω
-3.7A, -30V,RDS(ON) 75m
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
Symbol
Max.
Min.
Typ.
Unit
Test Condition
_
_
V
VGS=0V, ID=-250uA
-30
_
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Reference to 25oC,ID=-1mA
VDS=VGS, ID=-250uA
V/o
C
_
BVDS/ Tj
-0.02
_
V
VGS(th)
-1.0
_
-3.0
_
_
±
±
VGS= 20V
100
nA
uA
uA
IGSS
IDSS
Gate-Source Leakage Current
_
Drain-Source Leakage Current (Tj=25o )
C
VDS=-30V,VGS=0
VDS=-24V,VGS=0
-1
Drain-Source Leakage Current (Tj=70o )
C
_
_
_
_
_
-25
VGS=-10V, ID=-3A
75
Static Drain-Source On-Resistance2
mΩ
RDS(ON)
_
_
VGS=-4.5V, ID=-2.6A
120
Total Gate Charge 2
8
_
Qg
5
1
3
8
5
ID=-3A
_
_
VDS=-24V
VGS=-4.5V
nC
Gate-Source Charge
Qgs
_
_
Gate-Drain ("Miller") Charge
Qgd
Turn-on Delay Time2
Rise Time
_
_
Td(ON)
VDS=-15V
ID=-1A
_
_
_
Tr
VGS=-10V
nS
_
Ω
RG=3.3
Td(Off)
Turn-off Delay Time
Fall Time
20
7
Ω
RD=15
_
_
_
_
T
f
660
_
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
412
91
62
5.0
Ciss
Coss
Crss
VGS=0V
VDS=-25V
f=1.0MHz
pF
S
_
_
_
VDS=-10V, ID=-3A
Gfs
Forward Transconductance
Source-Drain Diode
Parameter
Symbol
Max.
Min.
Typ.
Unit
Test Condition
_
_
Forward On Voltage2
-1.2
_
V
VSD
IS=-1.2A, VGS=0V.
Reverse Recovery Time2
20
15
_
nS
nC
Is=3.0A, VGS=0
dl/dt=100A/uS
Trr
_
_
Reverse Recovery Charge
Qrr
Notes: 1.Pulse width limited by Max. junction temperature.
≦
≦
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
SMG2309
-3.7A, -30V,RDS(ON) 75mΩ
Elektronische Bauelemente
Characteristics Curve
P-Channel Enhancement Mode Power Mos.FET
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 3 of 4
SMG2309
Ω
-3.7A, -30V,RDS(ON) 75m
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 4 of 4
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