SMG2310 [SECOS]
N-Channel Enhancement Mode Power Mos.FET; N沟道增强模式电源Mos.FET
| 型号： | SMG2310 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Channel Enhancement Mode Power Mos.FET |
| 文件： | 总4页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMG2310
3A, 60V,RDS(ON) 90m
Ω
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
SC-59
Min
A
Dim
A
Max
3.10
1.60
1.30
0.50
2.10
0.10
0.26
0.60
1.15
2.80
The SMG2310 utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
L
2.70
1.40
1.00
0.35
1.70
0.00
0.10
0.20
0.85
2.40
3
B
S
B
Top View
The SC-59 package is universally used for all
2
1
C
commercial-industrial applications
D
D
G
H
G
Features
J
J
C
K
* Simple drive requirement
* Small package outline
K
H
L
Drain
S
Gate
All Dimension in mm
Applications
D
Source
* Power management in Notebook Computer
* Portable equipment
* Battery powered system
G
Marking : 2310
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
VDS
Ratings
Unit
V
60
±20
3.0
2.3
10
Gate-Source Voltage
VGS
V
3
ID@TA=25oC
Continuous Drain Current, VGS@4.5V
A
3
oC
Continuous Drain Current, VGS@4.5V
ID@TA=70
A
A
Pulsed Drain Current1,2
IDM
Total Power Dissipation
PD@TA=25o
C
1.38
0.01
W
W/oC
Linear Derating Factor
oC
-55~+150
Tj, Tstg
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Symbol
Ratings
Unit
oC /W
Thermal Resistance Junction-ambient3
Rthj-a
90
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
SMG2310
Ω
3A, 60V,RDS(ON) 90m
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
Symbol
Max.
Min.
Typ.
Unit
V
Test Condition
_
_
VGS=0V, ID=250uA
60
_
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Reference to 25oC,ID=1mA
VDS=VGS, ID=250uA
V/oC
V
_
0.05
_
BVDS/ Tj
VGS(th)
1.0
_
3.0
_
_
±
100
±
VGS= 20V
nA
uA
uA
IGSS
IDSS
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25o )
C
_
VDS=60V,VGS=0
VDS=48V,VGS=0
10
25
Drain-Source Leakage Current (Tj=70o )
C
_
_
_
_
_
VGS=10V, ID=3A
90
Static Drain-Source On-Resistance2
mΩ
RDS(ON)
_
_
VGS=4.5V, ID=2.0A
120
Total Gate Charge2
Qg
6
1.6
3
10
_
ID=3A
_
_
VDS=48V
VGS=4.5V
nC
Gate-Source Charge
Qgs
_
_
Gate-Drain ("Miller") Charge
Qgd
Turn-on Delay Time2
Rise Time
_
_
Td(ON)
6
VDD=30V
ID=1A
_
_
_
5
Tr
VGS=10V
nS
_
Ω
RG=3.3
Td(Off)
Turn-off Delay Time
Fall Time
16
3
Ω
RD=30
_
_
_
_
T
f
780
_
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
490
55
40
5.0
Ciss
Coss
Crss
VGS=0V
VDS=25V
f=1.0MHz
pF
S
_
_
_
VDS=5V, ID=3A
Forward Transconductance
Gfs
Source-Drain Diode
Parameter
Symbol
Max.
Min.
Typ.
Unit
Test Condition
_
_
Forward On Voltage2
1.2
_
V
VSD
IS=1.2A, VGS=0V.
_
Reverse Recovery Time
Reverse Recovery Charge
nS
nC
Trr
25
26
Is=3A,VGS=0V
dl/dt=100A/uS
_
_
Qrr
Notes: 1.Pulse width limited by Max. junction temperature.
≦
≦
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
SMG2310
3A, 60V,RDS(ON) 90m
Ω
Elektronische Bauelemente
Characteristics Curve
N-Channel Enhancement Mode Power Mos.FET
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 3. On-Resistance v.s. Gate Voltage
Fig 6. Gate Threshold Voltage v.s.
Fig 5. Forward Characteristics of
Reverse Diode
Junction Temperature
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 3 of 4
SMG2310
Ω
3A, 60V,RDS(ON) 90m
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 4 of 4
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