SMG2310A [SECOS]

N-Ch Enhancement Mode Power MOSFET; N沟道增强型功率MOSFET


型号：	SMG2310A
厂家：	SECOS HALBLEITERTECHNOLOGIE GMBH
描述：	N-Ch Enhancement Mode Power MOSFET N沟道增强型功率MOSFET
文件：	总3页 (文件大小：906K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SMG2310A

N-Ch Enhancement Mode Power MOSFET

5.0 A, 60 V, R_DS(ON)=115 mΩ

Elektronische Bauelemente

sRoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SC-59

DESCRIPTIONS

The SMG2310A utilized advanced processing techniques to achieve the

lowest possible on-resistance, extremely efficient and cost-effectiveness

device. The SMG2310A is universally used for all commercial-industrial

applications.

Top View

C B

FEATURES

ꢀ

Simple Drive Requirement,

ꢀ

Small Package Outline

Super High Density Cell Design for Extremely Low R_DS(ON)

Millimeter

Min. Max.

0.10 REF.

0.40 REF.

REF.

Min.

Max.

3.10

3.00

1.70

1.40

2.70

2.25

1.30

1.00

MARKING CODE

0.10

0.45

0.85

0.20

0.55

1.15

N-Channel Drain

1.70

0.35

2.30

0.50

2310A

Gate

Source

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Drain-Source Voltage

SYMBOL

V_DS

RATINGS

UNIT

±20

5.0

4.0

Gate-Source Voltage

V_GS

Continuous Drain Current³

Pulsed Drain Current^1,2

I_D@T_A=25°C

I_D@T_A=70°C

I_DM

Power Dissipation

Linear Derating Factor

Operating Junction & Storage Temperature Range

P_D@T_A=25°C

1.38

0.01

-55 ~ +150

W/°C

°C

T_J, T_STG

THERMAL DATA

R_θJA

Thermal Resistance Junction-ambient³

Max

°C /W

ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)

PARAMETER

Drain-Source Breakdown Voltage

Gate Threshold Voltage

SYMBOL MIN. TYP. MAX. UNIT

TEST CONDITIONS

BV_DSS

V_GS(th)

g_fs

µA

V_GS= 0, I_D= 250µA

V_DS= V_GS, I_D= 250µA

V_DS= 15V, I_D= 4A

V_GS= ±20V

V_DS= 60V, V_GS= 0

V_GS= 10 V, I_D= 5.0 A

V_GS= 4.5 V, I_D= 4.5 A

I_D= 4A

0.5

1.5

±100

Forward Transconductance

Gate-Source Leakage Current

Drain-Source Leakage Current(Tj=25°C)

Drain-Source Leakage Current(Tj=55°C)

I_GSS

I_DSS

115

125

Static Drain-Source On-Resistance

R_DS(ON)

mΩ

Total Gate Charge²

Gate-Source Charge

Gate-Drain (“Miller”) Charge

Turn-on Delay Time²

Rise Time

Turn-off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Q_g

Q_gs

Q_gd

T_d(on)

T_r

T_d(off)

T_f

C_iss

C_oss

C_rss

4.0

1.2

1.0

320

V_DS= 30V

V_GS= 4.5V

_DD= 30V R_G= 6Ω

I_D= 2.5A, V_GS= 10 V

R_L=12Ω

_GS= 0 V

V_DS= 30V

f = 1.0MHz

SOURCE-DRAIN DIODE

Forward On Voltage²

V_SD

1.2

I_S= 2.5 A, V_GS= 0V

Notes:

1. Pulse width limited by Max. Junction Temperature.

2. Pulse width≦300µs, duty cycle≦2%.

3. Surface mounted on 1 in²copper pad of FR4 board; 270°C/W when mounted on M in. copper pad.

24-Nov-2009 Rev. A

Page 1 of 3

SMG2310A

N-Ch Enhancement Mode Power MOSFET

5.0 A, 60 V, R_DS(ON)=115 mΩ

Elektronische Bauelemente

CHARACTERISTIC CURVE

24-Nov-2009 Rev. A

Page 2 of 3

SMG2310A

N-Ch Enhancement Mode Power MOSFET

5.0 A, 60 V, R_DS(ON)=115 mΩ

Elektronische Bauelemente

CHARACTERISTIC CURVE

24-Nov-2009 Rev. A

Page 3 of 3

相关型号：