IXFX35N50 [IXYS]
Power Field-Effect Transistor,;
| 型号： | IXFX35N50 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总2页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
VDSS
ID25
RDS(on)
IXFK33N50
IXFX35N50
33A 160m
35A 150m
500V
N-Channel Enhancement Mode
Avalanche Rated
High dv/dt, Low trr
TO-264 (IXFK)
G
D
S
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
500
500
V
V
Tab
VGSS
VGSM
Continuous
Transient
20
30
V
V
PLUS247 (IXFX)
ID25
IDM
TC = 25C
33N50
35N50
33
35
132
140
A
A
A
A
TC = 25C, Pulse Width Limited by TJM
33N50
35N50
G
D
S
Tab
IA
EAS
TC = 25C
TC = 25C
33
2.5
A
J
G = Gate
D
= Drain
dv/dt
PD
IS IDM, VDD VDSS, TJ 150C
TC = 25C
5
V/ns
W
S = Source
Tab = Drain
416
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
C
C
C
Features
International Standard Packages
Avalanche Rated
Low Intrinsic Gate Resistance
Low Package Inductance
Fast Intrinsic Rectifier
Molding epoxies meet UL 94 V-0
flammability classification
Low RDS (on) HDMOSTM process
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Md
FC
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
Nm/lb.in
N/lb
20..120 /4.5..27
Weight
TO-264
PLUS247
10
6
g
g
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(TJ = 25C Unless Otherwise Specified)
Min.
Typ.
0.102
-0.206
Max.
BVDSS
VGS = 0V, ID = 1mA
500
V
Applications
VDSS Temperature Coefficient
%/K
VGS(th)
VDS = VGS, ID = 4mA
2.0
4.5
V
DC-DC Converters
Battery Chargers
Synchronous rectification
Switch-Mode and Resonant-Mode
VGS(th) Temperature Coefficient
%/K
IGSS
IDSS
VGS = 20V, VDS = 0V
200 nA
200 A
Power Supplies
DC Choppers
Temperature and Lighting Controls
VDS = 0.8 • VDSS, VGS = 0V
TJ = 125C
2
mA
RDS(on)
VGS = 10V, ID = 0.5 • IDSS, Note 1
33N50
35N50
160 m
150 m
DS97517E(9/13)
© 2013 IXYS CORPORATION, All Rights Reserved
IXFK33N50
IXFX35N50
Symbol
Test Conditions
Characteristic Values
TO-264 Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 0.5 • IDSS, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
18
28
S
Ciss
Coss
Crss
5200
640
5700 nF
750 pF
310 pF
240
td(on)
tr
td(off)
tf
35
42
110
23
45 ns
50 ns
140 ns
35 ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
RG = 1 (External)
PINS:
- Gate
2,4 - Drain
- Source
1
Qg(on)
Qgs
227
29
nC
nC
nC
3
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
Qgd
110
RthJC
RthCS
0.30C/W
C/W
0.15
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min. Typ.
Max.
IS
VGS = 0V
33
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
IF = IS, VGS = 0V
132
1.5
PLUS247TM Outline
trr
IRM
250 ns
A
7
-di/dt = 100A/s
VR = 100V
QRM
750
nC
PINS:
1
- Gate
2,4 - Drain
Note
1. Pulse test, t 300s, duty cycle, d 2%.
3
- Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
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