IXFX38N80Q2 [IXYS]
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R; N沟道增强模式额定雪崩,高dv / dt ,低Q值低的固有ř型号: | IXFX38N80Q2 |
厂家: | IXYS CORPORATION |
描述: | N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R |
文件: | 总5页 (文件大小:606K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
Q2-Class
VDSS
ID25
= 800 V
38 A
IXFK 38N80Q2
IXFN 38N80Q2
IXFX 38N80Q2
=
RDS(on) = 220 mΩ
trr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg
PreliminaryDataSheet
Symbol
TestConditions
Maximum Ratings
PLUS247TM (IXFX)
VDSS
VDGR
T
= 25°C to 150°C
800
800
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ
VGS
VGSM
Continuous
Transient
30
40
V
V
G
D (TAB)
D
ID25
IDM
IAR
T
= 25°C
38
150
38
A
A
A
TC = 25°C, pulse width limited by TJM
TCC = 25°C
TO-264 AA (IX
EAR
EAS
T
= 25°C
75
4.0
mJ
J
TCC = 25°C
G
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
20
V/ns
D (TAB)
D
S
PD
TC = 25°C
735
W
miniBLOC,SOT-227B(IXFN)
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
E153432
S*
G
TL
1.6mm (0.063in) from case for 10s (Plus247, TO-264) 300
°C
VISOL
50/60Hz, RMS t =1 min
ISOL < 1mA t = 1s
SOT-227B
2500
3000
V~
V~
S*
I
D
Md
Mounting torque
Terminal torque
TO-264
SOT-227B
0.9/8 Nm/lb.in.
1.5/13 Nm/ib.in.
* Either Source terminal can be used as
main or Kelvin source terminal
FC
Mounting force
PLUS-247 22...130/5...30 N/lb
G = Gate
D = Drain
S = Source
TAB = Drain
Weight
PLUS247
TO-264
SOT-227B
g
10
30
g
g
Features
z
Double metal process for low gate
resistance
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
Symbol
TestConditions
Characteristic Values
z
z
(TJ = 25°C, unless otherwise specified)
min. typ. max.
z
z
z
VDSS
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 8 mA
800
2.0
V
V
VGS(th)
4.5
miniBLOC package version with
Aluminum Nitrate isolation
IGSS
IDSS
VGS = 30 VDC, VDS = 0
200 nA
VDS = V
T = 25°C
TJJ = 125°C
50 µA
VGS = 0DVSS
2
mA
Advantages
RDS(on)
V
= 10 V, ID = 0.5 • I
220 mΩ
PuGSlse test, t ≤ 300 µs,Dd2u5 ty cycle d ≤ 2 %
z
Easy to mount
Space savings
High power density
z
z
DS99150A(09/04)
© 2004 IXYS All rights reserved
IXFK 38N80Q2 IXFN 38N80Q2
IXFX 38N80Q2
Symbol
gfs
TestConditions
Characteristic Values
PLUS247TM Outline
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
25
37
S
Ciss
Coss
Crss
8340
890
pF
pF
pF
175
td(on)
tr
td(off)
tf
20
16
60
12
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Terminals: 1-Gate
RG = 1.0 Ω (External),
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
Millimeter
Inches
Qg(on)
Qgs
190
44
nC
nC
nC
Min. Max.
Min. Max.
A
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
A
A12
Qgd
88
b
1.14
1.91
2.92
1.40
2.13
3.12
b
RthJC
RthCK
0.17 K/W
K/W
b12
TO-264
0.15
C
D
E
0.61
0.80
20.80 21.34
15.75 16.13
e
5.45 BSC
.215 BSC
.780 .800
.150 .170
L
19.81 20.32
L1
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
TestConditions
min.
typ. max.
TO-264 AA Outline
VGS = 0 V
38
A
A
ISM
VSD
trr
Repetitive; pulse width limited by TJM
150
1.5
IF = IS, VGS = 0 V,
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
250
ns
IF = 25A, -di/dt = 100 A/µs, VR = 100 V
QRM
IRM
1
µC
10
A
SOT-227BminiBLOCOutline
Millimeter
Dim.
Inches
Min. Max.
Min.
Max.
A
4.82
2.54
2.00
5.13
2.89
2.10
.190
.202
.114
.083
A1
.100
A2
.079
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
c
D
E
e
0.53
25.91
19.81
0.83
26.16
19.96
.021
1.020
.780
.033
1.030
.786
5.46BSC
.215BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
L1
20.32
2.29
20.83
2.59
.800
.090
.820
.102
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
oneormoreofthefollowingU.S.patents:
IXFK 38N80Q2 IXFN 38N80Q2
IXFX 38N80Q2
Fig. 1. Output Characteristics
@ 25
Fig. 2. Extended Output Characteristics
º
C
@ 25 C
º
40
35
30
25
20
15
10
5
90
80
70
60
50
40
30
20
10
0
VGS = 10V
7V
V
GS
= 10V
8V
7V
6V
6V
5.5V
5.5V
5V
5V
7
0
0
1
2
3
4
5
6
8
9
10
0
3
6
9
12 15 18 21 24 27 30
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
@ 125
Fig. 4. RDS(on Normalized to 0.5 ID25
Value vs. Junction Temperature
)
ºC
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1
40
35
30
25
20
15
10
5
VGS = 10V
VGS = 10V
7V
6V
5.5V
5V
ID = 38A
ID = 19A
0.7
0.4
0
-50
-25
0
25
50
75
100 125 150
0
2
4
6
8
10 12 14 16 18 20
VD S - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to
0.5 ID25 Value vs. ID
Fig. 6. Drain Current vs. Case
Temperature
2.8
2.6
2.4
2.2
2
45
40
35
30
25
20
15
10
5
VGS = 10V
TJ = 125ºC
1.8
1.6
1.4
1.2
1
TJ = 25ºC
0.8
0
0
10
20
30
40
50
60
70
80
90
-50
-25
0
25
50
75
100 125 150
I D - Amperes
TC - Degrees Centigrade
© 2004 IXYS All rights reserved
IXFK 38N80Q2 IXFN 38N80Q2
IXFX 38N80Q2
Fig. 8. Transconductance
Fig. 7. Input Admittance
50
45
40
35
30
25
20
15
10
5
70
60
TJ = -40ºC
50
25ºC
125ºC
40
30
20
10
0
TJ = 125ºC
25ºC
-40ºC
0
3.5
4
4.5
5
5.5
6
0
10
20
30
40
50
60
V
G S - Volts
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
120
100
80
60
40
20
0
VDS = 400V
D = 19A
G = 10mA
I
I
TJ = 125ºC
TJ = 25ºC
0
20 40 60 80 100 120 140 160 180 200
0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3
VS D - Volts
Q G - nanoCoulombs
Fig. 12. Forward-Bias
Safe Operating Area
Fig. 11. Capacitance
10000
1000
100
1000
100
10
TJ = 150ºC
C = 25ºC
C
iss
T
25µs
100µs
RDS(on) Limit
C
C
oss
1ms
10ms
DC
rss
30
f = 1MHz
1
0
5
10
15
20
25
35
40
10
100
VD S - Volts
1000
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK 38N80Q2 IXFN 38N80Q2
IXFX 38N80Q2
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
0. 18
0. 16
0. 14
0. 12
0. 10
0. 08
0. 06
0. 04
0. 02
0. 00
1
10
10 0
1 00 0
Puls e W idth - millis ec onds
© 2004 IXYS All rights reserved
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