IXFX360N15T2 [IXYS]
GigaMOS TrenchT2 HiperFET Power MOSFET; GigaMOS TrenchT2 HiperFET功率MOSFET
| 型号： | IXFX360N15T2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GigaMOS TrenchT2 HiperFET Power MOSFET |
| 文件： | 总6页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
GigaMOSTM TrenchT2
HiperFETTM
Power MOSFET
VDSS = 150V
ID25 = 360A
RDS(on) ≤ 4.0mΩ
IXFK360N15T2
IXFX360N15T2
trr
≤ 150ns
N-Channel Enhancement Mode
Avalanche Rated
TO-264 (IXFK)
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
G
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
150
150
V
V
D
S
(TAB)
VGSS
VGSM
Continuous
Transient
± 20
± 30
V
V
PLUS247 (IXFX)
ID25
IL(RMS)
IDM
TC = 25°C (Chip Capability)
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
360
160
900
A
A
A
IA
EAS
TC = 25°C
TC = 25°C
100
TBD
A
J
(TAB)
PD
TC = 25°C
1670
20
W
G = Gate
D
= Drain
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
V/ns
S = Source
TAB = Drain
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +175
°C
°C
°C
Features
z International Standard Packages
z High Current Handling Capability
z Fast Intrinsic Diode
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
Md
FC
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
Nm/lb.in.
N/lb.
z Avalanche Rated
20..120 /4.5..27
z
Low RDS(on)
Weight
TO-264
PLUS247
10
6
g
g
Advantages
z
Easy to Mount
Space Savings
High Power Density
z
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ± 20V, VDS = 0V
VDS = VDSS, VGS= 0V
150
V
V
z
2.5
5.0
Synchronous Recification
z DC-DC Converters
z Battery Chargers
± 200 nA
50 μA
z Switched-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
IDSS
TJ = 150°C
5
mA
RDS(on)
VGS = 10V, ID = 60A, Note 1
4.0 mΩ
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100181(08/09)
IXFK360N15T2
IXFX360N15T2
Symbol
Test Conditions
Characteristic Values
TO-264 (IXFK) Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 60A, Note 1
140
230
S
Ciss
Coss
Crss
47.5
3060
665
nF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
50
170
115
265
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 1Ω (External)
Millimeter
Inches
Dim.
Min.
Max.
Min.
Max.
Qg(on)
Qgs
715
185
200
nC
nC
nC
A
A1
A2
b
b1
b2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
RthJC
RthCS
0.09 °C/W
°C/W
c
0.53
0.83
.021
1.020
.780
.033
1.030
.786
D
E
e
25.91 26.16
19.81 19.96
5.46 BSC
0.15
.215 BSC
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
K
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
Source-Drain Diode
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
PLUS 247TM (IXFX) Outline
IS
VGS = 0V
360
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 60A, VGS = 0V, Note 1
1440
1.2
trr
150
ns
μC
A
IF = 160A, -di/dt = 100A/μs
VR = 60V, VGS = 0V
QRM
IRM
0.50
9.00
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFK360N15T2
IXFX360N15T2
Fig. 1. Output Characteristics
@ TJ = 25ºC
Fig. 2. Extended Output Characteristics
@ TJ = 25ºC
350
300
250
200
150
100
50
350
300
250
200
150
100
50
VGS = 15V
VGS = 10V
10V
8V
7V
7V
6V
6V
5V
5V
4V
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics
@ TJ = 150ºC
Fig. 4. RDS(on) Normalized to ID = 180A Value vs.
Junction Temperature
350
300
250
200
150
100
50
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
VGS = 10V
VGS = 10V
8V
7V
I D = 360A
6V
5V
I D = 180A
4V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50
-25
0
25
50
75
100
125
150
175
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 180A Value vs.
Drain Current
Fig. 6. Drain Current vs. Case Temperature
180
160
140
120
100
80
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
VGS = 10V
External Lead Current Limit
TJ = 175ºC
60
40
TJ = 25ºC
20
0
0
50
100
150
200
250
300
350
-50
-25
0
25
50
75
100
125
150
175
ID - Amperes
TC - Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
IXFK360N15T2
IXFX360N15T2
Fig. 7. Input Admittance
Fig. 8. Transconductance
200
180
160
140
120
100
80
450
400
350
300
250
200
150
100
50
TJ = - 40ºC
TJ = 150ºC
25ºC
25ºC
- 40ºC
150ºC
60
40
20
0
0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0
20
40
60
80
100
120
140
160
180
200
220
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
350
300
250
200
150
100
50
VDS = 75V
I
I
D = 180A
G = 10mA
TJ = 150ºC
TJ = 25ºC
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
100
200
300
400
500
600
700
800
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
100,000
10,000
1,000
100
1,000.0
100.0
10.0
1.0
R
Limit
DS(on)
25µs
C
iss
100µs
External Lead Limit
C
oss
rss
1ms
10ms
T
= 175ºC
= 25ºC
J
C
100ms
DC
T
C
= 1 MHz
5
f
Single Pulse
0.1
1
10
100
1,000
0
10
15
20
25
30
35
40
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF:F_360N15T2(9V)8-19-09
IXFK360N15T2
IXFX360N15T2
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
340
300
260
220
180
140
100
300
260
220
180
140
100
60
RG = 1ꢀ , VGS = 10V
DS = 75V
RG = 1Ω , VGS = 10V
VDS = 75V
V
I D = 100A
TJ = 25ºC
TJ = 125ºC
I D = 200A
40
60
80
100
120
140
160
180
200
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
700
600
500
400
300
200
100
0
220
700
600
500
400
300
200
100
0
210
t f
t
d(off) - - - -
t r
t
d(on) - - - -
TJ = 125ºC, VGS = 10V
DS = 75V
200
180
160
140
120
100
80
180
150
120
90
RG = 1Ω, VGS = 10V
VDS = 75V
V
I D = 200A
I D = 200A
I D = 100A
60
I D = 100A
30
0
25
35
45
55
65
75
85
95
105
115
125
1
2
3
4
5
6
7
8
9
10
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
900
800
700
600
500
400
300
200
100
900
800
700
600
500
400
300
200
100
700
600
500
400
300
200
100
0
240
220
200
180
160
140
120
100
t f
t
d(off) - - - -
RG = 1ꢀ, VGS = 10V
DS = 75V
tf
td(off) - - - -
TJ = 125ºC, VGS = 10V
DS = 75V
V
V
I D = 200A, 100A
TJ = 125ºC
TJ = 25ºC
1
2
3
4
5
6
7
8
9
10
40
60
80
100
120
140
160
180
200
ID - Amperes
RG - Ohms
© 2009 IXYS CORPORATION, All Rights Reserved
IXFK360N15T2
IXFX360N15T2
Fig. 19. Maximium Transient Thermal Impedance
.sadgsfgsf
0.200
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF:F_360N15T2(9V)8-19-09
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