IXFX420N10T [IXYS]
GigaMOS Trench HiperFET Power MOSFET; GigaMOS海沟HiperFET功率MOSFET
| 型号： | IXFX420N10T |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GigaMOS Trench HiperFET Power MOSFET |
| 文件： | 总6页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
GigaMOSTM Trench
HiperFETTM
Power MOSFET
VDSS = 100V
ID25 = 420A
RDS(on) ≤ 2.6mΩ
IXFK420N10T
IXFX420N10T
trr
≤ 140ns
N-Channel Enhancement Mode
Avalanche Rated
TO-264 (IXFK)
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
G
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
100
100
V
V
TAB
D
S
VGSS
VGSM
Continuous
Transient
± 20
± 30
V
V
PLUS247 (IXFX)
ID25
IL(RMS)
IDM
TC = 25°C (Chip Capability)
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
420
160
1000
A
A
A
IA
EAS
TC = 25°C
TC = 25°C
100
5
A
J
G
TAB
D
S
PD
TC = 25°C
1670
20
W
G = Gate
D
= Drain
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
V/ns
S = Source
TAB = Drain
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +175
°C
°C
°C
Features
z International Standard Packages
z High Current Handling Capability
z Fast Intrinsic Diode
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
Md
FC
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
Nm/lb.in.
N/lb.
z Avalanche Rated
20..120 /4.5..27
z
Low RDS(on)
Weight
TO-264
PLUS247
10
6
g
g
Advantages
z
Easy to Mount
Space Savings
High Power Density
z
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ± 20V, VDS = 0V
VDS = VDSS, VGS= 0V
100
V
V
z
2.5
5.0
Synchronous Recification
z DC-DC Converters
z Battery Chargers
± 200 nA
50 μA
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
IDSS
TJ = 150°C
5
mA
RDS(on)
VGS = 10V, ID = 60A, Note 1
2.6 mΩ
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100198(09/09)
IXFK420N10T
IXFX420N10T
Symbol
Test Conditions
Characteristic Values
TO-264 (IXFK) Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 60A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate Input Resistance
110
185
S
Ciss
Coss
Crss
47
4390
530
nF
pF
pF
RGi
1.46
Ω
td(on)
tr
td(off)
tf
47
155
115
255
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 1Ω (External)
Millimeter
Inches
Dim.
Min.
Max.
Min.
Max.
A
A1
A2
b
b1
b2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
Qg(on)
Qgs
670
170
195
nC
nC
nC
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
c
0.53
0.83
.021
1.020
.780
.033
1.030
.786
D
E
e
25.91 26.16
19.81 19.96
5.46 BSC
RthJC
RthCS
0.09 °C/W
°C/W
.215 BSC
0.15
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
K
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
Source-Drain Diode
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
PLUS 247TM (IXFX) Outline
IS
VGS = 0V
420
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 60A, VGS = 0V, Note 1
1680
1.2
trr
140
ns
μC
A
IF = 150A, -di/dt = 100A/μs
QRM
IRM
0.38
7.00
VR = 60V, VGS = 0V
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFK420N10T
IXFX420N10T
Fig. 1. Output Characteristics
@ TJ = 25ºC
Fig. 2. Extended Output Characteristics
@ TJ = 25ºC
350
300
250
200
150
100
50
400
350
300
250
200
150
100
50
VGS = 15V
VGS = 15V
10V
8V
7V
10V
7V
6V
5.5V
6V
5V
4V
5V
4V
0
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.0
-50
-50
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics
@ TJ = 150ºC
Fig. 4. Normalized RDS(on) vs. Junction Temperature
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
320
280
240
200
160
120
80
VGS = 15V
10V
VGS = 10V
I
< 420A
8V
7V
D
6V
5V
4.5V
4V
40
0
-25
0
25
50
75
100
125
150
175
0.0
0.2
0.4
0.6
0.8
VDS - Volts
1.0
1.2
1.4
1.6
TJ - Degrees Centigrade
Fig. 5. Normalized RDS(on) vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
180
160
140
120
100
80
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS = 10V
External Lead Current Limit
TJ = 175ºC
60
40
TJ = 25ºC
20
0
0
50
100
150
200
250
300
350
-25
0
25
50
75
100
125
150
175
ID - Amperes
TC - Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
IXFK420N10T
IXFX420N10T
Fig. 7. Input Admittance
Fig. 8. Transconductance
180
160
140
120
100
80
350
300
250
200
150
100
50
TJ = - 40ºC
25ºC
TJ = 150ºC
150ºC
25ºC
60
- 40ºC
40
20
0
0
3.0
3.5
4.0
4.5
5.0
5.5
0
20
40
60
80
100
120
140
160
180
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
350
300
250
200
150
100
50
VDS = 50V
I
I
D = 210A
G = 10mA
TJ = 150ºC
TJ = 25ºC
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
100
200
300
400
500
600
700
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
10,000
1,000
100
10
100.0
10.0
1.0
T
T
= 175ºC
= 25ºC
J
R
Limit
DS(on)
C
C
iss
Single Pulse
25µs
100µs
External Lead Limit
C
oss
1ms
C
rss
10ms
= 1 MHz
5
f
100ms
DC
1
0.1
1
10
100
1,000
0
10
15
20
25
30
35
40
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF:F_420N10T(9V)9-22-09
IXFK420N10T
IXFX420N10T
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
340
300
260
220
180
140
100
320
280
240
200
160
120
80
RG = 1ꢀ , VGS = 10V
DS = 50V
RG = 1Ω , VGS = 10V
V
VDS = 50V
I D = 200A
TJ = 125ºC
TJ = 25ºC
I D = 100A
40
0
40
60
80
100
120
140
160
180
200
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
ID - Amperes
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
700
600
500
400
300
200
100
0
220
700
600
500
400
300
200
100
240
t f
t
d(off) - - - -
t r
t
d(on) - - - -
TJ = 125ºC, VGS = 10V
DS = 50V
200
180
160
140
120
100
80
RG = 1Ω, VGS = 10V
200
160
120
80
VDS = 50V
V
I D = 200A
I D = 200A
I D = 100A
I D = 100A
40
0
25
35
45
55
65
75
85
95
105
115
125
1
2
3
4
5
6
7
8
9
10
TJ - Degrees Centigrade
RG - Ohms
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
800
700
600
500
400
300
200
100
800
700
600
500
400
300
200
100
500
400
300
200
100
0
260
220
180
140
100
60
t f
t
d(off) - - - -
RG = 1ꢀ, VGS = 10V
DS = 50V
t f
td(off) - - - -
TJ = 125ºC, VGS = 10V
DS = 50V
V
V
I D = 200A
TJ = 125ºC
I D = 100A
TJ = 25ºC
1
2
3
4
5
6
7
8
9
10
40
60
80
100
120
ID - Amperes
140
160
180
200
RG - Ohms
© 2009 IXYS CORPORATION, All Rights Reserved
IXFK420N10T
IXFX420N10T
Fig. 19. Maximium Transient Thermal Impedance
.sadgsfgsf
0.200
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF:F_420N10T(9V)9-22-09
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