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IXFX44N50F [IXYS]

HiPerRF Power MOSFETs F-Class MegaHertz Switching Single MOSFET Die; HiPerRF功率MOSFET F级兆赫切换单个MOSFET模
IXFX44N50F
型号： IXFX44N50F
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

HiPerRF Power MOSFETs F-Class MegaHertz Switching Single MOSFET Die
HiPerRF功率MOSFET F级兆赫切换单个MOSFET模
文件： 总2页 (文件大小：101K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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HiPerRFTM  
Power MOSFETs  
F-Class: MegaHertz Switching  
IXFX 44N50F VDSS = 500 V  
IXFK 44N50F ID25 = 44 A  
RDS(on) = 120 mΩ  
t ≤ 250 ns  
Single MOSFET Die  
rr  
N-ChannelEnhancementMode  
Avalanche Rated, Low Qg, Low Intrinsic Rg  
High dV/dt, Low trr  
PLUS247TM
Maximum Ratings  
Symbol  
TestConditions  
VDSS  
VDGR  
T
T
= 25°C to 150°C  
= 25°C to 150°C; R = 1 MΩ  
500  
500  
V
V
J
J
(TAB)  
G
GS  
D
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
TO-264AA(IXFK)  
ID25  
IDM  
IAR  
T
= 25°C  
44  
184  
44  
A
A
A
C
T
= 25°C, pulse width limited by T  
= 25°C  
C
JM  
T
C
G
D
(TAB)  
EAR  
EAS  
T
= 25°C  
= 25°C  
60  
2.5  
mJ  
J
S
C
T
C
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
dv/dt  
I
T
≤ I , di/dt ≤ 100 A/µs, V ≤ V  
10  
V/ns  
S
DM  
DD  
DSS  
≤ 150°C, R = 2 Ω  
J
G
PD  
TJ  
T
= 25°C  
500  
W
Features  
C
l
RF capable MOSFETs  
-55 ... +150  
°C  
l
l
l
l
Double metal process for low gate  
resistance  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
Unclamped Inductive Switching (UIS)  
rated  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
Low package inductance  
- easy to drive and to protect  
Fast intrinsic rectifier  
Md  
Mounting torque  
TO-264  
0.4/6 Nm/lb.in.  
Weight  
PLUS 247  
TO-264  
6
10  
g
g
Applications  
l
DC-DC converters  
l
Switched-mode and resonant-mode  
power supplies, >500kHz switching  
Symbol  
VDSS  
TestConditions  
Characteristic Values  
(T = 25°C, unless otherwise specified)  
J
l
DC choppers  
min. typ. max.  
l
13.5 MHz industrial applications  
VGS = 0 V, ID = 250uA  
VDS = VGS, ID = 4mA  
500  
3.0  
V
l
Pulse generation  
l
Laser drivers  
VGS(th)  
IGSS  
5.0 V  
l
RF amplifiers  
V
= ±20 V, V = 0  
±100 nA  
GS  
DS  
Advantages  
IDSS  
V
V
= V  
= 0 V  
T = 25°C  
100 µA  
2 mA  
l
DS  
DSS  
J
TM  
PLUS 247 package for clip or spring  
T = 125°C  
GS  
J
mounting  
l
l
RDS(on)  
V
= 10 V, I = 0.5 I  
120 mΩ  
GS  
D
D25  
Space savings  
High power density  
Note 1  
98731A (01/02)  
© 2002 IXYS All rights reserved  
IXFK 44N50F  
IXFX 44N50F  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(T = 25°C, unless otherwise specified)  
PLUS247TM Outline  
J
min. typ. max.  
V
= 10 V; I = 0.5 I  
D25  
Note 1  
22  
32  
S
DS  
D
Ciss  
Coss  
Crss  
5500  
990  
pF  
pF  
pF  
V
= 0 V, V = 25 V, f = 1 MHz  
GS  
DS  
330  
td(on)  
tr  
td(off)  
tf  
23  
18  
53  
8
ns  
ns  
ns  
ns  
V
= 10 V, V = 0.5 V , I = 0.5 I  
D25  
GS  
DS  
DSS  
D
R = 1 Ω (External)  
G
Terminals: 1 - Gate  
2 - Drain (Collector)  
3-Source(Emitter)  
4 - Drain (Collector)  
Qg(on)  
Qgs  
162  
56  
nC  
nC  
nC  
Dim.  
A
Millimeter  
Min. Max.  
Inches  
Min. Max.  
V
= 10 V, V = 0.5 V , I = 0.5 I  
DS DSS D D25  
GS  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
Qgd  
70  
A
1
A
2
RthJC  
RthCK  
0.26 K/W  
K/W  
b1.14  
b
1.40  
.045 .055  
1.91  
2.92  
2.13  
3.12  
.075 .084  
.115 .123  
1
0.15  
b
2
C
D
E
0.61  
0.80  
.024 .031  
.819 .840  
.620 .635  
20.80 21.34  
15.75 16.13  
e
5.45 BSC  
19.81 20.32  
.215 BSC  
.780 .800  
.150 .170  
Source-DrainDiode  
Characteristic Values  
(T = 25°C, unless otherwise specified)  
L
L1  
J
3.81  
4.32  
Symbol  
TestConditions  
= 0 V  
min. typ. max.  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IS  
V
44  
A
A
GS  
TO-264 AA Outline  
ISM  
Repetitive;  
pulse width limited by T  
164  
JM  
VSD  
I = I , V = 0 V, Note 1  
1.5  
V
F
S
GS  
trr  
250 ns  
I = 25 A,-di/dt = 100 A/µs, V = 100 V  
QRM  
IRM  
1.0  
8
µC  
F
R
A
Millimeter  
Dim.  
Inches  
Min.  
Max.  
Min.  
Max.  
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
A
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
A1  
A2  
.114  
.083  
b
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
b1  
b2  
c
0.53  
25.91  
19.81  
0.83  
26.16  
19.96  
.021  
1.020  
.780  
.033  
1.030  
.786  
D
E
e
5.46BSC  
.215BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
L1  
20.32  
2.29  
20.83  
2.59  
.800  
.090  
.820  
.102  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  

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