IXFX360N10T [IXYS]
GigaMOS Trench HiperFET Power MOSFET; GigaMOS海沟HiperFET功率MOSFET
| 型号： | IXFX360N10T |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GigaMOS Trench HiperFET Power MOSFET |
| 文件： | 总6页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
GigaMOSTM Trench
HiperFETTM
Power MOSFET
VDSS = 100V
ID25 = 360A
RDS(on) ≤ 2.9mΩ
IXFK360N10T
IXFX360N10T
trr
≤ 130ns
N-Channel Enhancement Mode
Avalanche Rated
TO-264 (IXFK)
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
G
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
100
100
V
V
Tab
D
S
VGSS
VGSM
Continuous
Transient
± 20
± 30
V
V
PLUS247 (IXFX)
ID25
IL(RMS)
IDM
TC = 25°C (Chip Capability)
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
360
160
900
A
A
A
IA
EAS
TC = 25°C
TC = 25°C
100
3
A
J
G
Tab
D
S
PD
TC = 25°C
1250
20
W
G = Gate
D
= Drain
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
V/ns
S = Source
Tab = Drain
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +175
°C
°C
°C
Features
z International Standard Packages
z High Current Handling Capability
z Fast Intrinsic Diode
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
Md
FC
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
Nm/lb.in.
N/lb.
z Avalanche Rated
20..120 /4.5..27
z
Low RDS(on)
Weight
TO-264
PLUS247
10
6
g
g
Advantages
z
Easy to Mount
Space Savings
High Power Density
z
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 3mA
VGS = ± 20V, VDS = 0V
VDS = VDSS, VGS = 0V
100
V
V
z
2.5
4.5
Synchronous Recification
z DC-DC Converters
z Battery Chargers
± 200 nA
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
IDSS
25 μA
2.5 mA
TJ = 150°C
RDS(on)
VGS = 10V, ID = 100A, Notes 1 & 2
2.9 mΩ
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
© 2011 IXYS CORPORATION, All Rights Reserved
DS100210A(02/11)
IXFK360N10T
IXFX360N10T
Symbol
Test Conditions
Characteristic Values
TO-264 Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 60A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
110
180
S
Ciss
Coss
Crss
33
3160
400
nF
pF
pF
RGi
td(on)
tr
Gate Input Resistance
1.20
47
Ω
ns
ns
ns
ns
Terminals:
1 - Gate
Resistive Switching Times
2 - Drain
3 - Source
4 - Drain
100
80
V
GS = 10V, VDS = 0.5 • VDSS, ID = 100A
td(off)
tf
Millimeter
Inches
RG = 1Ω (External)
Dim.
Min.
Max.
Min.
Max.
160
A
A1
A2
b
b1
b2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.044
.094
.114
.202
.114
.083
.056
.106
.122
Qg(on)
Qgs
525
145
165
nC
nC
nC
1.12
2.39
2.90
1.42
2.69
3.09
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
c
0.53
0.83
.021
1.020
.780
.033
1.030
.786
D
E
e
25.91 26.16
19.81 19.96
5.46 BSC
RthJC
RthCS
0.12 °C/W
°C/W
.215 BSC
0.05
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
K
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
Source-Drain Diode
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
PLUS 247TM Outline
IS
VGS = 0V
360
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 100A, VGS = 0V, Note 1
1440
1.2
trr
IRM
130 ns
A
IF = 100A, VGS = 0V
6.60
0.33
-di/dt = 100A/μs
VR = 50V
QRM
μC
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Notes 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Includes lead resistance.
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFK360N10T
IXFX360N10T
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
360
300
240
180
120
60
400
350
300
250
200
150
100
50
VGS = 15V
VGS = 15V
10V
8V
7V
10V
7V
8V
6V
6V
5.5V
5V
5.5V
5V
4V
4V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 180A Value
vs. Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
360
300
240
180
120
60
2.6
2.2
1.8
1.4
1.0
0.6
0.2
VGS = 15V
VGS = 10V
10V
8V
7V
I D = 360A
I D = 180A
6V
5V
4V
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50
-25
0
25
50
75
100
125
150
175
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. Normalized RDS(on) vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
180
160
140
120
100
80
3.0
2.6
2.2
1.8
1.4
1.0
0.6
VGS = 10V
External Lead Current Limit
TJ = 175ºC
60
TJ = 25ºC
40
20
0
0
40
80
120
160
200
240
280
320
360
-50
-25
0
25
50
75
100
125
150
175
ID - Amperes
TC - Degrees Centigrade
© 2011 IXYS CORPORATION, All Rights Reserved
IXFK360N10T
IXFX360N10T
Fig. 7. Input Admittance
Fig. 8. Transconductance
200
180
160
140
120
100
80
350
300
250
200
150
100
50
TJ = - 40ºC
25ºC
TJ = 150ºC
150ºC
25ºC
60
- 40ºC
40
20
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
0
1
20
40
60
80
100
120
140
160
180
200
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
320
280
240
200
160
120
80
VDS = 50V
I
I
D = 180A
G = 10mA
TJ = 150ºC
TJ = 25ºC
40
0
50
100
150
200
250
300
350
400
450
500
550
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
QG - NanoCoulombs
VSD - Volts
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1,000
100
10
100.0
10.0
1.0
R
Limit
DS(on)
25µs
100µs
C
iss
External Lead Limit
C
C
oss
1ms
T
T
= 175ºC
= 25ºC
J
10ms
C
rss
Single Pulse
100ms
= 1 MHz
5
f
DC
1
0.1
10
100
0
10
15
20
25
30
35
40
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK360N10T
IXFX360N10T
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
280
240
200
160
120
80
320
280
240
200
160
120
80
RG = 1Ω , VGS = 10V
RG = 1ꢀ , VGS = 10V
VDS = 50V
VDS = 50V
I D = 200A
TJ = 125ºC
TJ = 25ºC
I D = 100A
40
40
40
60
80
100
120
140
160
180
200
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
ID - Amperes
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
400
350
300
250
200
150
100
120
700
600
500
400
300
200
100
0
210
t f
td(off) - - - -
t r
t
d(on) - - - -
TJ = 125ºC, VGS = 10V
DS = 50V
180
150
120
90
RG = 1Ω, VGS = 10V
DS = 50V
110
100
90
V
V
I D = 200A
I D = 100A
I D = 200A
80
I D = 100A
60
70
30
60
0
25
35
45
55
65
75
85
95
105
115
125
1
2
3
4
5
6
7
8
9
10
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
700
600
500
400
300
200
100
650
550
450
350
250
150
50
400
350
300
250
200
150
100
50
140
130
120
110
100
90
tf
t
d(off) - - - -
RG = 1ꢀ, VGS = 10V
DS = 50V
t f
t
d(off) - - - -
TJ = 125ºC, VGS = 10V
V
VDS = 50V
TJ = 125ºC
TJ = 25ºC
I D = 200A
I D = 100A
80
70
0
60
1
2
3
4
5
6
7
8
9
10
40
60
80
100
120
ID - Amperes
140
160
180
200
RG - Ohms
© 2011 IXYS CORPORATION, All Rights Reserved
IXFK360N10T
IXFX360N10T
Fig. 19. Maximum Transient Thermal Impedance
.sadgsfgsf
0.200
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF:F_360N10T(8V)9-23-09
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