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IXFX400N15X3 [LITTELFUSE]

Power Field-Effect Transistor,;
IXFX400N15X3
型号： IXFX400N15X3
厂家： LITTELFUSE    LITTELFUSE
描述：

Power Field-Effect Transistor,
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中文：  中文翻译
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Advance Technical Information  
X3-Class HiPerFETTM  
Power MOSFET  
VDSS = 150V  
ID25 = 400A  
RDS(on) 3m  
IXFK400N15X3  
IXFX400N15X3  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXFK)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
150  
150  
V
V
G
D
VDGR  
TJ = 25C to 150C, RGS = 1M  
Tab  
S
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
PLUS247 (IXFX)  
ID25  
IL(RMS)  
TC = 25C  
External Lead Current Limit  
400  
160  
A
A
IDM  
TC = 25C, Pulse Width Limited by TJM  
900  
A
G
D
IA  
TC = 25C  
TC = 25C  
200  
3.5  
A
J
Tab  
S
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
20  
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
1250  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in  
N/lb  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Low Package Inductance  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
High Power Density  
Easy to Mount  
Space Savings  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
150  
V
2.5  
4.5  
V
Applications  
200 nA  
IDSS  
25 A  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
TJ = 125C  
1.5 mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
3 m  
Robotics and Servo Controls  
DS100850B(10/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXFK400N15X3  
IXFX400N15X3  
TO-264 Outline  
Symbol  
Test Conditions  
Characteristic Values  
A
E
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
Q
S
gfs  
VDS = 10V, ID = 60A, Note 1  
Gate Input Resistance  
85  
145  
S
R
D
Q1  
RGi  
2.15  
R1  
1
2
3
L1  
Ciss  
Coss  
Crss  
23.7  
3730  
140  
nF  
PF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
L
c
b
A1  
b1  
b2  
Effective Output Capacitance  
e
x2  
Co(er)  
Co(tr)  
2200  
5330  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
DS = 0.8 • VDSS  
0P  
4
V
Terminals:  
1
= Gate  
2,4 Drain  
= Source  
=
3
td(on)  
tr  
td(off)  
tf  
36  
30  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
210  
19  
RG = 1(External)  
Qg(on)  
Qgs  
365  
103  
87  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.10 C/W  
C/W  
0.15  
Source-Drain Diode  
PLUS 247TM Outline  
A
E1  
E
Q
A2  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
D2  
R
D
D1  
IS  
VGS = 0V  
400  
A
A
4
1
2
3
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
1600  
1.4  
L1  
V
L
trr  
QRM  
IRM  
132  
580  
8.8  
ns  
IF = 150A, -di/dt = 100A/μs  
b
A1  
e
nC  
3 PLCS  
C
2 PLCS  
b2 2 PLCS  
VR = 100V  
b4  
A
Terminals: 1 - Gate  
2,4 - Drain  
3 - Source  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFK400N15X3  
IXFX400N15X3  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
400  
350  
300  
250  
200  
150  
100  
50  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
V
= 10V  
GS  
V
= 10V  
9V  
GS  
9V  
8V  
7V  
8V  
7V  
6V  
6V  
5V  
5V  
0
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
0
2
4
6
8
10  
12  
14  
16  
18  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 200A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
400  
350  
300  
250  
200  
150  
100  
50  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 10V  
9V  
GS  
8V  
7V  
V
= 10V  
GS  
I
= 400A  
D
I
= 200A  
D
6V  
5V  
4V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.4  
0.8  
1.2  
1.6  
2
2.4  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 200A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
V
= 10V  
GS  
BV  
DSS  
o
T = 125 C  
J
V
GS(th)  
o
T = 25 C  
J
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
100  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
TJ - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXFK400N15X3  
IXFX400N15X3  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
400  
350  
300  
250  
200  
150  
100  
50  
180  
160  
140  
120  
100  
80  
External Lead Current Limit  
o
T
J
= 125 C  
o
60  
o
25 C  
- 40 C  
40  
20  
0
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
450  
400  
3.0  
0.2  
1
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
450  
400  
350  
300  
250  
200  
150  
100  
50  
800  
700  
600  
500  
400  
300  
200  
100  
0
o
T
= - 40 C  
J
o
25 C  
o
125 C  
o
T = 125 C  
J
o
T = 25 C  
J
0
0
50  
100  
150  
200  
250  
300  
350  
400  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
ID - Amperes  
VSD - Volts  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
100,000  
10,000  
1,000  
100  
10  
9
8
7
6
5
4
3
2
1
0
V
= 75V  
DS  
I
I
= 200A  
= 10mA  
D
G
C
iss  
C
C
oss  
rss  
= 1 MHz  
f
0
50  
100  
150  
200  
250  
300  
350  
10  
100  
1,000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFK400N15X3  
IXFX400N15X3  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
1000  
100  
10  
24  
20  
16  
12  
8
R
Limit  
)
DS(  
on  
25μs  
100μs  
External Lead  
Current Limit  
1ms  
10ms  
100ms  
1
o
T = 150 C  
J
DC  
o
4
T
C
= 25 C  
Single Pulse  
0
0.1  
0
20  
40  
60  
80  
100  
120  
140  
1
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaaa  
0.2  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_400N15X3 (29-S151) 7-13-17  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  

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