SUB70N03-09BP-E3 [VISHAY]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | SUB70N03-09BP-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总5页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
_C/W
SUP/SUB70N03-09BP
New Product
Vishay Siliconix
N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)
a
0.009 @ V = 10 V
70
GS
30
0.013 @ V = 4.5 V
GS
60
D
TO-220AB
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D S
S
N-Channel MOSFET
SUB70N03-09BP
Top View
SUP70N03-09BP
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
V
V
GS
"20
b
T
C
= 25_C
70
Continuous Drain Current (T = 175_C)
I
D
J
T
C
= 100_C
50
200
30
A
Pulsed Drain Current
Avalanche Current
I
DM
I
AR
a
Repetitive Avalanche Energy
L = 0.1 mH
E
61
mJ
W
AR
b
Power Dissipation
T
C
= 25_C
P
93
D
Operating Junction and Storage Temperature Range
T , T
–55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
c
PCB Mount (TO-263)
40
62.5
1.6
Junction-to-Ambient
Junction-to-Case
R
thJA
thJC
Free Air (TO-220AB)
R
Notes:
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 71229
S-01237—Rev. A, 12-Jun-00
www.vishay.com S FaxBack 408-970-5600
1
SUP/SUB70N03-09BP
New Product
Vishay Siliconix
MOSFET SPECIFICATIONS (T=2_5C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
V
= 0 V, I = 250 mA
30
0.8
(BR)DSS
GS D
V
V
DS
= V , I = 250 mA
Gate Threshold Voltage
Gate-Body Leakage
V
GS DS
GS(th)
V
DS
= 0 V, V = "20 V
I
"100
1
nA
GS
GSS
V
DS
= 24 V, V = 0 V
GS
Zero Gate Voltage Drain Current
I
V
V
= 24 V, V = 0 V, T = 125_C
50
mA
DSS
DS
GS
J
= 24 V, V = 0 V, T = 175_C
150
DS
GS
J
a
On-State Drain Current
I
V = 5 V, V = 10 V
DS GS
70
A
D(on)
V
= 10 V, I = 30 A
D
0.007
0.009
0.0135
0.017
0.013
GS
V
V
= 10 V, I = 30 A, T = 125_C
GS
D
J
a
Drain-Source On-State Resistance
r
W
DS(on)
= 10 V, I = 30 A, T = 175_C
GS
D
J
V
GS
= 4.5 V, I = 20 A
0.010
45
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 30 A
20
S
DS
D
Dynamicb
Input Capacitance
C
1500
530
240
15.5
5
iss
Output Capacitance
C
oss
V
= 0 V, V = 25 V, f = 1 MHz
pF
nC
GS
DS
Reversen Transfer Capacitance
C
rss
c
Total Gate Charge
Q
19
g
c
Gate-Source Charge
Q
Q
V
= 15 V, V = 5 V, I = 70 A
DS GS D
gs
gd
c
Gate-Drain Charge
6
c
Turn-On Delay Time
t
10
8
18
15
45
16
d(on)
c
Rise Time
t
r
V
= 15 V, R = 0.21 W
L
DD
ns
c
I
D
] 70 A, V
= 10 V, R = 2.5 W
GEN G
Turn-Off Delay Time
t
25
9
d(off)
c
Fall Time
t
f
Gate Resistance
R
g
2
W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
70
200
1.5
60
S
A
Pulsed Current
I
SM
a
Forward Voltage
V
SD
I
F
= 70 A, V = 0 V
1.1
30
V
GS
Reverse Recovery Time
t
rr
I
F
= 70 A, di/dt = 100 A/ms
ns
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Document Number: 71229
S-01237—Rev. A, 12-Jun-00
www.vishay.com S FaxBack 408-970-5600
2
SUP/SUB70N03-09BP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
200
160
120
80
200
V
GS
= 10 thru 6 V
T
C
= –55_C
5 V
150
100
50
25_C
4 V
125_C
3 V
40
1, 2 V
0
0
0
2
4
6
8
10
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
100
80
60
40
20
0
0.025
0.020
0.015
0.010
0.005
0
T
C
= –55_C
25_C
125_C
V
GS
= 4.5 V
V
GS
= 10 V
0
20
40
60
80
100
120
0
20
40
60
80
100
120
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
Gate Charge
2400
2000
1600
1200
800
400
0
10
8
V
= 15 V
= 70 A
DS
I
D
C
iss
6
4
C
oss
C
rss
2
0
0
6
12
18
24
30
0
6
12
Q – Total Gate Charge (nC)
g
18
24
30
V
– Drain-to-Source Voltage (V)
DS
Document Number: 71229
S-01237—Rev. A, 12-Jun-00
www.vishay.com S FaxBack 408-970-5600
3
SUP/SUB70N03-09BP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
1.6
1.2
0.8
0.4
0
100
V
= 10 V
= 30 A
GS
I
D
T = 150_C
J
T = 25_C
J
10
1
–50 –25
0
25
50
75 100 125 150 175
0
0.3
V
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
– Source-to-Drain Voltage (V)
SD
Drain-Source Voltage Breakdown
vs. Junction Temperature
45
I
D
= 250 mA
40
35
30
25
–50 –25
0
25
50
75 100 125 150 175
T
J
– Junction Temperature (_C)
Document Number: 71229
S-01237—Rev. A, 12-Jun-00
www.vishay.com S FaxBack 408-970-5600
4
SUP/SUB70N03-09BP
New Product
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature
Safe Operating Area
1000
80
60
40
20
0
Limited
by r
DS(on)
10 ms
100
10
1
100 ms
1 ms
10 ms
100 ms
dc
T
= 25_C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
C
– Case Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
Document Number: 71229
S-01237—Rev. A, 12-Jun-00
www.vishay.com S FaxBack 408-970-5600
5
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