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SUB65P06-20-E3 [VISHAY]

Transistor;
SUB65P06-20-E3
型号： SUB65P06-20-E3
厂家： VISHAY    VISHAY
描述：

Transistor
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SUP/SUB65P06-20  
Vishay Siliconix  
P-Channel 60-V (D-S), 175_C MOSFET  
PRODUCT SUMMARY  
V(BR)DSS (V)  
rDS(on)  
(ꢀ )  
ID (A)  
a
–60  
0.020  
–65  
TO-220AB  
S
TO-263  
G
DRAIN connected to TAB  
G
D S  
G D S  
Top View  
Top View  
D
SUB65P06-20  
SUP65P06-20  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
Unit  
Gate-Source Voltage  
V
GS  
"20  
V
a
T
= 25_C  
= 125_C  
–65  
C
Continuous Drain Current  
(T = 175_C)  
J
I
D
T
–39  
–200  
–60  
C
A
Pulsed Drain Current  
I
DM  
Avalanche Current  
I
AR  
b
Repetitive Avalanche Energy  
L = 0.1 mH  
E
AR  
180  
mJ  
d
T
= 25_C (TO-220AB and TO-263)  
250  
C
Power Dissipation  
P
D
W
c
T
= 125_C (TO-263)  
3.7  
A
Operating Junction and Storage Temperature Range  
T , T  
–55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
c
PCB Mount (TO-263)  
R
thJA  
R
thJA  
R
thJC  
40  
62.5  
0.6  
Junction-to-Ambient  
Junction-to-Case  
Free Air (TO-220AB)  
_C/W  
Notes:  
a. Package limited.  
b. Duty cycle v 1%.  
c. When mounted on 1” square PCB (FR-4 material).  
d. See SOA curve for voltage derating.  
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm  
Document Number: 70289  
S-05111—Rev. C, 10-Dec-01  
www.vishay.com  
2-1  
SUP/SUB65P06-20  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= 0 V, I = –250 ꢁ A  
–60  
(BR)DSS  
GS  
D
V
V
DS  
= V , I = –250 ꢁ A  
GS D  
V
–2.0  
–3.0  
–4.0  
GS(th)  
V
DS  
= 0 V, V = "20 V  
GS  
I
"100  
–1  
nA  
GSS  
V
= –60 V, V = 0 V  
GS  
DS  
V
V
= –60 V, V = 0 V, T = 125_C  
–50  
Zero Gate Voltage Drain Current  
I
ꢁ
ꢂ
DS  
GS  
J
DSS  
= –60 V, V = 0 V, T = 175_C  
–150  
DS  
GS  
J
a
On-State Drain Current  
I
V
DS  
= –5 V, V = –10 V  
–120  
A
D(on)  
GS  
V
= –10 V, I = –30 A  
0.017  
0.020  
0.033  
0.042  
GS  
D
a
V
GS  
= –10 V, I = –30 A, T = 125_C  
Drain-Source On-State Resistance  
r
ꢀ
D
J
DS(on)  
V
GS  
= –10 V, I = –30 A, T = 175_C  
D
J
a
Forward Transconductance  
g
fs  
V
= –15 V, I = –30 A  
25  
S
DS  
D
Dynamicb  
Input Capacitance  
C
4500  
870  
350  
85  
iss  
Output Capacitance  
C
oss  
V
GS  
= 0 V, V = –25 V, f = 1 MHz  
pF  
nC  
DS  
Reversen Transfer Capacitance  
C
rss  
c
Total Gate Charge  
Q
120  
g
c
Gate-Source Charge  
Q
Q
24  
V
DS  
= –30 V, V = –10 V, I = –65 A  
GS D  
gs  
gd  
c
Gate-Drain Charge  
22  
c
Turn-On Delay Time  
t
15  
40  
80  
d(on)  
c
Rise Time  
t
r
40  
V
DD  
= –30 V, R = 0.47  
ꢀ
L
ns  
c
Turn-Off Delay Time  
t
65  
120  
60  
I
D
] –65 A, V  
= –10 V, R = 2.5  
ꢀ
d(off)  
GEN  
G
c
Fall Time  
t
f
30  
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b  
Continuous Current  
I
–65  
–200  
–1.4  
120  
9
s
A
Pulsed Current  
I
SM  
a
Forward Voltage  
V
SD  
I
F
= –65 A, V = 0 V  
–1.1  
70  
V
ns  
A
GS  
Reverse Recovery Time  
t
rr  
RM(REC)  
Peak Reverse Recovery Current  
Reverse Recovery Charge  
I
7
I
F
= –65 A, di/dt = 100 A/ꢁ s  
Q
0.245  
0.54  
ꢁ C  
rr  
Notes:  
a. Pulse test; pulse width v 300 ꢁ s, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing  
d. Independent of operating temperature.  
Document Number: 70289  
S-05111—Rev. C, 10-Dec-01  
www.vishay.com S FaxBack 408-970-5600  
2-2  
SUP/SUB65P06-20  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
200  
200  
160  
120  
80  
V
GS  
= 10, 9, 8 V  
7 V  
6 V  
T
= –55_C  
C
160  
120  
80  
40  
0
25_C  
125_C  
5 V  
4 V  
40  
0
0
2
4
6
8
10  
0
2
4
6
8
10  
V
DS  
– Drain-to-Source Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
Transconductance  
On-Resistance vs. Drain Current  
100  
80  
60  
40  
20  
0
0.030  
0.025  
0.020  
0.015  
0.010  
0.005  
0.000  
T
= –55_C  
C
V
V
= 10 V  
= 20 V  
25_C  
GS  
125_C  
GS  
0
20  
40  
60  
80  
100  
0
20  
40  
60  
80  
100  
V
GS  
– Gate-to-Source Voltage (V)  
I
D
– Drain Current (A)  
Capacitance  
Gate Charge  
6000  
5000  
4000  
3000  
2000  
1000  
0
20  
16  
12  
8
V
= 30 V  
= 65 A  
C
iss  
DS  
I
D
C
oss  
4
C
rss  
0
0
10  
20  
30  
40  
50  
60  
0
25  
50  
Q – Total Gate Charge (nC)  
g
75  
100  
125  
150  
175  
V
– Drain-to-Source Voltage (V)  
DS  
Document Number: 70289  
www.vishay.com  
S-05111—Rev. C, 10-Dec-01  
2-3  
SUP/SUB65P06-20  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistancevs. Junction Temperature  
Source-Drain Diode Forward Voltage  
2.5  
100  
V
= 10 V  
= 30 A  
GS  
I
D
2.0  
1.5  
1.0  
0.5  
0.0  
T
= 150_C  
J
T
= 25_C  
J
10  
1
–50 –25  
0
25  
50  
75 100 125 150 175  
0.3  
0.3  
0.6  
0.9  
1.2  
1.5  
T
– Junction Temperature (_C)  
V
SD  
– Source-to-Drain Voltage (V)  
J
THERMAL RATINGS  
Maximum Avalanche and Drain Current  
vs. Case Temperature  
Safe Operating Area  
500  
100  
80  
60  
40  
20  
0
10 ꢁs  
Limited by r  
DS(on)  
100 ꢁ s  
1 ms  
10  
1
10 ms  
100 ms  
dc  
T
= 25_C  
C
Single Pulse  
0.1  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1
10  
100  
T
– Case Temperature (_C)  
V
DS  
– Drain-to-Source Voltage (V)  
C
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
10  
–5  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
1
3
Square Wave Pulse Duration (sec)  
Document Number: 70289  
S-05111—Rev. C, 10-Dec-01  
www.vishay.com S FaxBack 408-970-5600  
2-4  
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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