SUB70N03-09 [VISHAY]
TRANSISTOR 70 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 2 PIN, FET General Purpose Power;
| 型号： | SUB70N03-09 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 70 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 2 PIN, FET General Purpose Power 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUP/SUB70N03-09P
Vishay Siliconix
N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)
a
0.009 @ V = 10 V
"70
GS
30
0.015 @ V = 4.5 V
GS
"55
D
TO-220AB
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D S
Top View
S
SUB70N03-09
N-Channel MOSFET
SUP70N03-09
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
"30
"20
DS
V
V
GS
a
T
C
= 25_C
"70
Continuous Drain Current (T = 175_C)
I
D
J
T
= 100_C
"50
"180
"45
101
C
A
Pulsed Drain Current
Avalanche Current
I
DM
I
AR
b
Repetitive Avalanche Energy
L = 0.1 mH
E
AR
mJ
W
c
Power Dissipation
T
C
= 25_C
P
D
93
Operating Junction and Storage Temperature Range
T , T
–55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
d
PCB Mount (TO-263)
40
62.5
1.6
Junction-to-Ambient
Junction-to-Case
R
thJA
thJC
C/W
Free Air (TO-220AB)
R
Notes:
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 70821
S-59917—Rev. A, 28-Sep-98
www.vishay.com S FaxBack 408-970-5600
2-1
SUP/SUB70N03-09P
Vishay Siliconix
MOSFET SPECIFICATIONS (T=2_5C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
V
= 0 V, I = 250 mA
30
1
(BR)DSS
GS D
V
V
DS
= V , I = 250 mA
Gate Threshold Voltage
Gate-Body Leakage
V
2
GS DS
GS(th)
V
DS
= 0 V, V = "20 V
I
"100
1
nA
GS
GSS
V
DS
= 24 V, V = 0 V
GS
Zero Gate Voltage Drain Current
I
V
V
= 24 V, V = 0 V, T = 125_C
50
mA
DSS
DS
GS
J
= 24 V, V = 0 V, T = 175_C
150
DS
GS
J
a
On-State Drain Current
I
V = 5 V, V = 10 V
DS GS
70
A
D(on)
V
= 10 V, I = 30 A
D
0.007
0.009
0.0135
0.017
0.015
GS
V
V
= 10 V, I = 30 A, T = 125_C
GS
D
J
a
Drain-Source On-State Resistance
r
W
DS(on)
= 10 V, I = 30 A, T = 175_C
GS
D
J
V
GS
= 4.5 V, I = 20 A
0.011
60
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 30 A
30
S
DS
D
Dynamicb
Input Capacitance
C
2700
680
360
45
iss
Output Capacitance
C
oss
V
GS
= 0 V, V = 25 V, f = 1 MHz
pF
nC
DS
Reversen Transfer Capacitance
C
rss
c
Total Gate Charge
Q
70
g
c
Gate-Source Charge
Q
gs
Q
gd
V
DS
= 15 V, V = 10 V, I = 70 A
8.5
11
GS
D
c
Gate-Drain Charge
c
Turn-On Delay Time
t
13
20
15
60
20
d(on)
c
Rise Time
t
r
7
V
= 15 V, R = 0.21 W
L
DD
ns
c
I
D
] 70 A, V
= 10 V, R = 2.5 W
GEN G
Turn-Off Delay Time
t
35
d(off)
c
Fall Time
t
f
12
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
70
180
1.5
70
S
A
Pulsed Current
I
SM
a
Forward Voltage
V
SD
I
F
= 70 A, V = 0 V
1.2
35
V
GS
Reverse Recovery Time
t
rr
I
F
= 70 A, di/dt = 100 A/ms
ns
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Document Number: 70821
S-59917—Rev. A, 28-Sep-98
www.vishay.com S FaxBack 408-970-5600
2-2
SUP/SUB70N03-09P
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
180
100
V
GS
= 10 thru 7 V
150
6 V
80
60
40
20
0
120
90
5 V
T
= 125_C
60
C
4 V
30
25_C
3 V
–55_C
0
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
100
80
60
40
20
0.030
0.025
0.020
0.015
0.010
0.005
0
T
= –55_C
C
25_C
125_C
V
GS
= 4.5 V
V
GS
= 10 V
0
0
10
20
30
40
50
60
70
0
20
40
60
80
100
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
Gate Charge
4000
3000
2000
1000
10
8
V
= 15 V
= 70 A
DS
C
iss
I
D
6
4
C
oss
2
C
rss
0
0
0
6
12
18
24
30
0
10
20
Q – Total Gate Charge (nC)
g
30
40
50
V
– Drain-to-Source Voltage (V)
DS
Document Number: 70821
S-59917—Rev. A, 28-Sep-98
www.vishay.com S FaxBack 408-970-5600
2-3
SUP/SUB70N03-09P
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.4
2.0
1.6
1.2
0.8
0.4
0
100
V
= 10 V
= 30 A
GS
I
D
T = 150_C
J
T = 25_C
J
10
1
–50 –25
0
25
50
75 100 125 150 175
0
0.3
V
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
– Source-to-Drain Voltage (V)
SD
THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature
Safe Operating Area
500
100
80
60
40
20
0
10 ms
Limited
by r
DS(on)
100 ms
10
1 ms
T
= 25_C
C
10 ms
Single Pulse
100 ms
dc
1
0.1
0
25
50
75
100
125
150
175
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
C
– Case Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–5
–4
–3
–2
–1
10
10
10
10
Square Wave Pulse Duration (sec)
10
1
3
Document Number: 70821
S-59917—Rev. A, 28-Sep-98
www.vishay.com S FaxBack 408-970-5600
2-4
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
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therein, which apply to these products.
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document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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