功率场效应晶体管
图片 型号 文档 类别 描述 品牌 供应商
2N7300 功率场效应晶体管 41A, 100V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
2N7301 功率场效应晶体管 46A, 200V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
2N7301H 功率场效应晶体管 46A, 200V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
2N7301R 功率场效应晶体管 46A, 200V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
2N7302 功率场效应晶体管 31A, 200V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
2N7303 功率场效应晶体管 34A, 250V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
2N7303R 功率场效应晶体管 34A, 250V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
2N7305 功率场效应晶体管 17A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
2N7305H 功率场效应晶体管 TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,17A I(D),TO-204AE
2N7305R 功率场效应晶体管 TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,17A I(D),TO-204AE
2N7306 功率场效应晶体管 12A, 500V, 0.41ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
2N7307 功率场效应晶体管 6A, 100V, 0.55ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
2N7308 功率场效应晶体管 5A, 100V, 0.55ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N7311 功率场效应晶体管 3A, 200V, 1.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N7312 功率场效应晶体管 4A, 200V, 1.32ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
2N7316 功率场效应晶体管 11A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
2N7317 功率场效应晶体管 Power Field-Effect Transistor, 11A I(D), 100V, 0.315ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
2N7318 功率场效应晶体管 7A, 200V, 0.72ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
2N7319 功率场效应晶体管 7A, 200V, 0.735ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
2N7323 功率场效应晶体管 23A, 100V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
2N7324 功率场效应晶体管 16A, 200V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
2N7325 功率场效应晶体管 14A, 200V, 0.315ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
2N7328 功率场效应晶体管 40A, 100V, 0.085ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE
2N7329 功率场效应晶体管 30A, 100V, 0.095ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA
2N7330 功率场效应晶体管 26A, 200V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE
2N7331 功率场效应晶体管 19A, 200V, 0.21ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA
2N7334 功率场效应晶体管 14 LEAD DUAL IN LINE QUAD
14 LEAD双列直插式QUAD
2N7336 功率场效应晶体管 14 LEAD DUAL IN LINE QUAD
14 LEAD双列直插式QUAD
2N7336PBF 功率场效应晶体管 Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB
2N7380 功率场效应晶体管 Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN
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总600条记录,每页显示30条记录分20页显示。

什么是功率场效应晶体管

    功率场效应晶体管(Power MOSFET)是一种广泛应用于功率放大和开关控制的半导体器件。它由金属氧化物半导体场效应晶体管(MOSFET)演变而来,具有高速度、低驱动电压、低输入电阻、低失真度等特点,因此在现代电子技术中得到了广泛的应用。 功率场效应晶体管的主要部分是由P型衬底、N型漂移层、P型沟道以及N型源和漏极组成。沟道区域上方有一层氧化物作为栅极绝缘层。当栅极施加正向电压时,在沟道区域形成一个近似恒定的P型沟道,使漏极和源极之间形成导通通道,从而控制功率场效应晶体管的导通和截止。功率场效应晶体管主要依靠栅源电压的变化来共同控制漏-源电路上的电流。