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其他晶体管
射频双极晶体管
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小信号双极晶体管
功率场效应晶体管
功率双极晶体管
小信号场效应晶体管
射频小信号双极晶体管
单结晶体管
射频小信号场效应晶体管
射频场效应晶体管
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图片 | 型号 | 文档 | 类别 | 描述 | 品牌 | 供应商 | |
2N7300 | ![]() |
功率场效应晶体管 | 41A, 100V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA | ![]() |
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2N7301 | ![]() |
功率场效应晶体管 | 46A, 200V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | ![]() |
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2N7301H | ![]() |
功率场效应晶体管 | 46A, 200V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | ![]() |
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2N7301R | ![]() |
功率场效应晶体管 | 46A, 200V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | ![]() |
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2N7302 | ![]() |
功率场效应晶体管 | 31A, 200V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA | ![]() |
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2N7303 | ![]() |
功率场效应晶体管 | 34A, 250V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | ![]() |
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2N7303R | ![]() |
功率场效应晶体管 | 34A, 250V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | ![]() |
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2N7305 | ![]() |
功率场效应晶体管 | 17A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | ![]() |
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2N7305H | ![]() |
功率场效应晶体管 | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,17A I(D),TO-204AE | ![]() |
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2N7305R | ![]() |
功率场效应晶体管 | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,17A I(D),TO-204AE | ![]() |
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2N7306 | ![]() |
功率场效应晶体管 | 12A, 500V, 0.41ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA | ![]() |
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2N7307 | ![]() |
功率场效应晶体管 | 6A, 100V, 0.55ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7308 | ![]() |
功率场效应晶体管 | 5A, 100V, 0.55ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | ![]() |
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2N7311 | ![]() |
功率场效应晶体管 | 3A, 200V, 1.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | ![]() |
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2N7312 | ![]() |
功率场效应晶体管 | 4A, 200V, 1.32ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA | ![]() |
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2N7316 | ![]() |
功率场效应晶体管 | 11A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7317 | ![]() |
功率场效应晶体管 | Power Field-Effect Transistor, 11A I(D), 100V, 0.315ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | ![]() |
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2N7318 | ![]() |
功率场效应晶体管 | 7A, 200V, 0.72ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7319 | ![]() |
功率场效应晶体管 | 7A, 200V, 0.735ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA | ![]() |
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2N7323 | ![]() |
功率场效应晶体管 | 23A, 100V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA | ![]() |
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2N7324 | ![]() |
功率场效应晶体管 | 16A, 200V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7325 | ![]() |
功率场效应晶体管 | 14A, 200V, 0.315ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA | ![]() |
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2N7328 | ![]() |
功率场效应晶体管 | 40A, 100V, 0.085ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE | ![]() |
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2N7329 | ![]() |
功率场效应晶体管 | 30A, 100V, 0.095ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA | ![]() |
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2N7330 | ![]() |
功率场效应晶体管 | 26A, 200V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE | ![]() |
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2N7331 | ![]() |
功率场效应晶体管 | 19A, 200V, 0.21ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA | ![]() |
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2N7334 | ![]() |
功率场效应晶体管 | 14 LEAD DUAL IN LINE QUAD 14 LEAD双列直插式QUAD |
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2N7336 | ![]() |
功率场效应晶体管 | 14 LEAD DUAL IN LINE QUAD 14 LEAD双列直插式QUAD |
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2N7336PBF | ![]() |
功率场效应晶体管 | Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB | ![]() |
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2N7380 | ![]() |
功率场效应晶体管 | Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN | ![]() |
功率场效应晶体管 热门型号
- 2SJ607-ZJ-AZ
- 2SK2476-AZ
- 2SK2329(L)
- 2SJ603-ZJ-AZ
- 2SJ452ZM-UL
- 2SK1647STR-E
- 2SJ484WY
- 2SK1764KY
- 2SK2315TYUL
- 2SK1123-A
- 2SK1764KYUR
- 2SJ409(S)TR
- 2SK1698FYUR
- 2SJ486ZU-UL
- 2SK1647(S)TL
- 2SJ479(S)TR
- 2SK1618(S)
- 2SK1540(S)TR
- 2SJ399ZF
- 2SJ399ZF
- 2SK1697EYUL
- 2SK1636S-E
- 2SK1579DYTL-E
- 2SK2247QYUR
- 2SK2059(S)
- 2SK1313(S)
- 2SK2084(S)TR
- 2SK1337RR
- 2SK1334BYUL
- 2SK1286-AZ
- 2SK1852-AZ
- 2SK1698FYTL
- 2SJ602-Z-AZ
- 2SK1541(S)TL
- 2SJ550(L)
- 2SJ550(L)
- 2SJ244JYTR
- 2SJ244JYTR
- 2SJ528(L)
- 2SJ505(S)
- 2SJ505(S)
- 2SJ186CYTL
- 2SK1698FYTR
- 2SK1624(S)TL
- 2SK1623(S)
- 2SK1618(L)
- 2SK1579DYUR
- 2SK1489(F)
- 2SK1647(S)TR
- 2SK1334BYUR
- 2SK1313(S)TR
- 2SJ606-AZ
- 2SK1299(S)
- 2SK1579DYUL
- 2SJ451ZK
- 2SJ451ZK
- 2SK1528(S)TR
- 2SK1528(S)TR
- 2SJ551S-E
- 2SJ506(S)TL
- 2SJ328-AZ
- 2SJ605-Z-AZ
- 2SJ330-AZ
- 2SK1288-AZ
- 2SK1254(S)TR
- 2SK1528S-E
- 2SK1528(S)
- 2SJ505S-E
- 2SK1152(S)TL
- 2SJ449-AZ
- 2SK1337RF
- 2SJ319(S)TL
- 2SK1313S-E
- 2SK1315L-E
- 2SK1254(S)
- 2SK1151(S)
- 2SK1151(S)
- 2SJ553S-E
- 2SJ550S-E
- 2SJ604-Z-AZ
- 2SJ245(S)TR
- 2SJ387(S)TR
- 2SJ220(S)TL
- 2SJ130(S)TR
- 2SJ399ZF-TL
- 2SJ387(S)
- 2SJ529STR-E
- 2SJ505(S)TL
- 2SJ505(S)TL
- 2SJ317NYTR
- 2SJ317NYTR
- 2SJ278MYUR
- 2SJ278MYUR
- 2SJ179-AZ
- 2SJ553STR-E
- 2SJ530(L)
- 2SJ492-S-AZ
- 2SJ551STR-E
- 2SJ492-ZJ-AZ
- 2SJ451ZK-TL
什么是功率场效应晶体管
- 功率场效应晶体管(Power MOSFET)是一种广泛应用于功率放大和开关控制的半导体器件。它由金属氧化物半导体场效应晶体管(MOSFET)演变而来,具有高速度、低驱动电压、低输入电阻、低失真度等特点,因此在现代电子技术中得到了广泛的应用。
功率场效应晶体管的主要部分是由P型衬底、N型漂移层、P型沟道以及N型源和漏极组成。沟道区域上方有一层氧化物作为栅极绝缘层。当栅极施加正向电压时,在沟道区域形成一个近似恒定的P型沟道,使漏极和源极之间形成导通通道,从而控制功率场效应晶体管的导通和截止。功率场效应晶体管主要依靠栅源电压的变化来共同控制漏-源电路上的电流。