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其他晶体管
射频双极晶体管
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小信号双极晶体管
功率场效应晶体管
功率双极晶体管
小信号场效应晶体管
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单结晶体管
射频小信号场效应晶体管
射频场效应晶体管
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图片 | 型号 | 文档 | 类别 | 描述 | 品牌 | 供应商 | |
2N7280H | ![]() |
功率场效应晶体管 | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,3A I(D),TO-204AA | ![]() |
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2N7280H3 | ![]() |
功率场效应晶体管 | 3A, 500V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7280H4 | ![]() |
功率场效应晶体管 | 3A, 500V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7280R | ![]() |
功率场效应晶体管 | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,3A I(D),TO-204AA | ![]() |
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2N7280R3 | ![]() |
功率场效应晶体管 | Power Field-Effect Transistor, 3A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | ![]() |
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2N7280R4 | ![]() |
功率场效应晶体管 | 3A, 500V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7281D | ![]() |
功率场效应晶体管 | 2A, 500V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | ![]() |
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2N7281D3 | ![]() |
功率场效应晶体管 | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,2A I(D),TO-205AF | ![]() |
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2N7281H1 | ![]() |
功率场效应晶体管 | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,2A I(D),TO-205AF | ![]() |
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2N7281H3 | ![]() |
功率场效应晶体管 | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,2A I(D),TO-205AF | ![]() |
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2N7281R1 | ![]() |
功率场效应晶体管 | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,2A I(D),TO-205AF | ![]() |
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2N7281R4 | ![]() |
功率场效应晶体管 | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,2A I(D),TO-205AF | ![]() |
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2N7282 | ![]() |
功率场效应晶体管 | 3A, 500V, 2.52ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA | ![]() |
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2N7282H | ![]() |
功率场效应晶体管 | 3A, 500V, 2.52ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA | ![]() |
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2N7282R | ![]() |
功率场效应晶体管 | 3A, 500V, 2.52ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA | ![]() |
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2N7283 | ![]() |
功率场效应晶体管 | 23A, 100V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7283D | ![]() |
功率场效应晶体管 | 23A, 100V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7283D1 | ![]() |
功率场效应晶体管 | 23A, 100V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7283D3 | ![]() |
功率场效应晶体管 | 23A, 100V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7283D4 | ![]() |
功率场效应晶体管 | 23A, 100V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7283H1 | ![]() |
功率场效应晶体管 | 23A, 100V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7283H3 | ![]() |
功率场效应晶体管 | 23A, 100V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7283R1 | ![]() |
功率场效应晶体管 | 23A, 100V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7283R3 | ![]() |
功率场效应晶体管 | 23A, 100V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7283R4 | ![]() |
功率场效应晶体管 | 23A, 100V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7284 | ![]() |
功率场效应晶体管 | 17A, 100V, 0.145ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA | ![]() |
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2N7284H1 | ![]() |
功率场效应晶体管 | Power Field-Effect Transistor, 17A I(D), 100V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | ![]() |
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2N7284H3 | ![]() |
功率场效应晶体管 | 17A, 100V, 0.145ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA | ![]() |
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2N7284R3 | ![]() |
功率场效应晶体管 | Power Field-Effect Transistor, 17A I(D), 100V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | ![]() |
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2N7285 | ![]() |
功率场效应晶体管 | 16A, 200V, 0.24ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
功率场效应晶体管 热门型号
- FDPF7N50U_G
- FDS8813NZ-G
- FDP3682_NL
- FDS6990S_NL
- FDD6696_NL
- FDB2552_NL
- FDD10AN06A0_NL
- FDP2532_NL
- FDP047AN08A0_NL
- FDD6612A_NL
- FDD6035AL_NL
- FDD6680A_NL
- FDD3690_NL
- FDD850N10LD
- FDD6680S_NL
- FDD6670A-OLDDIE
- FDD8880_NL
- FDD6644S
- FDD6680_NL
- FDD6030BL_NL
- FDD2572_NL
- FCPF11N60NTYDTU
- FDC796N_NL
- FDC2512-G
- FDMC7672S
- FDJ1028N_NL
- FDA62N28_NL
- FDB6030BL_NL
- FA38SA50LCPBF
- EFC4615R-TR
- ECH8659-M-TL-H
- CTLDM8120-M621HTR
- CTLDM7002A-M621HTRLEADFREE
- CTLDM7181-M832DTIN/LEAD
- CTLDM7120-M832DBKLEADFREE
- CTLDM7120-M563TR
- CTLDM7002A-M621HBKLEADFREE
- CSD19531Q5AT
- CSD16340Q3T
- CMPDM203NHTR
- CMLM0574TRPBFREE
- CMLDM7120GBKLEADFREE
- CMLDM7003GBKLEADFREE
- CMPDM303NHTRPBFREE
- CMPDM7120GBK
- CMLM0574TRLEADFREE
- CMLDM7003JETRPBFREE
- CMLM0305TTRLEADFREE
- CMLDM7003JEBKTIN/LEAD
- CMLDM7003GBKPBFREE
- CMLDM7120TGTRLEADFREE
- CMNDM7001TRLEADFREE
- CMLM0574BK
- CMLDM7003GTRPBFREE
- CEDM7004BKLEADFREE
- BUZ30ASMDG
- BUK9880-55ATRL
- BUK9880-55AT/R
- BUK581-100A-T
- BUK9Y40-55BT/R
- BUK566-60H-T
- BUK565-60HT/R
- BUK9628-55-T
- BUK98150-55-T
- BUK98150-55A/CU
- BUK565-100A-T
- BTS112ASMD
- BSZ123N08NS3GXT
- BSZ900N15NS3GXT
- BSP206TRL
- BSZ520N15NS3GXT
- BSZ100N06LS3GXT
- BSS131H6327XT
- BSZ440N10NS3GXT
- BSC105N10LSFGXT
- BSC077N12NS3GXT
- BSP205-T
- BSP255T/R
- BSP126-T
- BSO207PHXT
- BSO201SPG
- BSP108-T
- BSC057N03LSGXT
- BSC060N10NS3GXT
- BSC025N03MSGXT
- BSP206-T
- BSP120-T
- BSC034N03LSGXT
- BSM191(C)
- BSC042N03SGXT
- BSC240N12NS3GXT
- BSC032N03SGXT
- BSC018NE2LSI
- BSC059N04LSGXT
- BB506CFS-TR
- BB502CBS-UL-E
- AUIRFZ48ZSTRL
- AUIRFS4010TRL
- AUIRFR3504
- AUIRFR2905ZSTRR
什么是功率场效应晶体管
- 功率场效应晶体管(Power MOSFET)是一种广泛应用于功率放大和开关控制的半导体器件。它由金属氧化物半导体场效应晶体管(MOSFET)演变而来,具有高速度、低驱动电压、低输入电阻、低失真度等特点,因此在现代电子技术中得到了广泛的应用。
功率场效应晶体管的主要部分是由P型衬底、N型漂移层、P型沟道以及N型源和漏极组成。沟道区域上方有一层氧化物作为栅极绝缘层。当栅极施加正向电压时,在沟道区域形成一个近似恒定的P型沟道,使漏极和源极之间形成导通通道,从而控制功率场效应晶体管的导通和截止。功率场效应晶体管主要依靠栅源电压的变化来共同控制漏-源电路上的电流。