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其他晶体管
射频双极晶体管
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小信号双极晶体管
功率场效应晶体管
功率双极晶体管
小信号场效应晶体管
射频小信号双极晶体管
单结晶体管
射频小信号场效应晶体管
射频场效应晶体管
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图片 | 型号 | 文档 | 类别 | 描述 | 品牌 | 供应商 | |
2N7271 | ![]() |
功率场效应晶体管 | 14A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7271D | ![]() |
功率场效应晶体管 | 14A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7271H | ![]() |
功率场效应晶体管 | 14A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7271R | ![]() |
功率场效应晶体管 | 14A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7272 | ![]() |
功率场效应晶体管 | 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | ![]() |
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2N7272D | ![]() |
功率场效应晶体管 | 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | ![]() |
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2N7272D1 | ![]() |
功率场效应晶体管 | 2N7272D1 | ![]() |
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2N7272H | ![]() |
功率场效应晶体管 | 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | ![]() |
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2N7272H3 | ![]() |
功率场效应晶体管 | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,8A I(D),TO-205AF | ![]() |
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2N7272R | ![]() |
功率场效应晶体管 | 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | ![]() |
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2N7272R3 | ![]() |
功率场效应晶体管 | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,8A I(D),TO-205AF | ![]() |
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2N7272R4 | ![]() |
功率场效应晶体管 | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,8A I(D),TO-205AF | ![]() |
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2N7273 | ![]() |
功率场效应晶体管 | 12A, 100V, 0.195ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA | ![]() |
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2N7273D | ![]() |
功率场效应晶体管 | 12A, 100V, 0.195ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA | ![]() |
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2N7273H | ![]() |
功率场效应晶体管 | 12A, 100V, 0.195ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA | ![]() |
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2N7273R | ![]() |
功率场效应晶体管 | 12A, 100V, 0.195ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA | ![]() |
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2N7274 | ![]() |
功率场效应晶体管 | 8A, 200V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7275 | ![]() |
功率场效应晶体管 | 5A, 200V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | ![]() |
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2N7275D | ![]() |
功率场效应晶体管 | 5A, 200V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | ![]() |
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2N7275R | ![]() |
功率场效应晶体管 | 5A, 200V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | ![]() |
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2N7276 | ![]() |
功率场效应晶体管 | 7A, 200V, 0.515ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA | ![]() |
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2N7277 | ![]() |
功率场效应晶体管 | 7A, 250V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7278D | ![]() |
功率场效应晶体管 | 4A, 250V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | ![]() |
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2N7278H1 | ![]() |
功率场效应晶体管 | TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,4A I(D),TO-205AF | ![]() |
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2N7278R1 | ![]() |
功率场效应晶体管 | TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,4A I(D),TO-205AF | ![]() |
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2N7278R3 | ![]() |
功率场效应晶体管 | TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,4A I(D),TO-205AF | ![]() |
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2N7279 | ![]() |
功率场效应晶体管 | 5A, 250V, 0.715ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA | ![]() |
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2N7280 | ![]() |
功率场效应晶体管 | 3A, 500V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
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2N7280D | ![]() |
功率场效应晶体管 | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,3A I(D),TO-204AA | ![]() |
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2N7280D1 | ![]() |
功率场效应晶体管 | 3A, 500V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | ![]() |
功率场效应晶体管 热门型号
- FQB13N06TM
- FQP10N60C_NL
- FQPF6N40CT
- FQU2N50BTU
- FQP9N25CTSTU
- FQI7N80TU
- FQI7N10TU
- FQD1N80TM_NL
- FQPF8N60CYDTU
- FQI7N20TU
- FQB7N80TM
- FQI3N90TU
- FQB65N06TM_NL
- FQI5N40TU
- FQI32N12V2TU
- FQP12P20_NL
- FQI4P40TU
- FQI6N40TU
- FQI19N10TU
- FQD7N20LTM
- FQD5N30TF
- FQD4N25TM_WS
- FQD3N60TM
- FQB9N50CTM
- FQI10N20CTU
- FQD7N10TM
- FQB90N08TM
- FQI7P20TU
- FQI2N50TU
- FQI140N03LTU
- FQD6N60CTM-WS
- FQD8P10TF
- FQI70N08TU
- FQD19N10LTF
- FQD17N08TF
- FQD11P06TF
- FQB55N06TM
- FQI34P10TU_NL
- FQD2N80TF
- FQD20N06LTM
- FQI630TU
- FQI5N50TU
- FQB19N20LTM
- FQB12N20LTM
- FQB19N20TM
- FQA65N20_NL
- FQD6N40CTM
- FQD1N60CTF_NL
- FQD16N15TM
- FQB7N10LTM
- FQD24N08TM
- FQB3N40TM
- FQD13N06LTF
- FQB20N06TM
- FQB5P20TM
- FQD20N06LETF
- FQD6N15TF
- FQD630TF_NL
- FQD630TF
- FQD20N06LETM
- FQD18N20V2TF
- FQB58N08TM
- FDP2552_NL
- FDD5N50NZFTM
- FDB7042L_NL
- FDZ208P_NL
- FDU8880_NL
- FDU6692_NL
- FDS8928A_NL
- FDD6780
- FDB8876_NL
- FDS3572_NL
- FDS9926A_NL
- FDS6894A_NL
- FDS6162N7_NL
- FDZ294N_NL
- FDS4953_NL
- FDB060AN08A0_NL
- FDPF5N50T
- FDPF5N50NZ
- FDS6892A_NL
- FDS2582_NL
- FDS4559_NL
- FDP2572_NL
- FDMC86102L
- FDD6030L_NL
- FDW2511NZ_NL
- FDU6680_NL
- FDS8958A_NL
- FDS3812_NL
- FDT434P_NL
- FDPF33N25TRDTU
- FDS6900S_NL
- FDS3682_NL
- FDS9933_NL
- FDS6892AZ_NL
- FDMS86500
- FDS4465_NL
- FDM606P_NL
- FDP8880_NL
什么是功率场效应晶体管
- 功率场效应晶体管(Power MOSFET)是一种广泛应用于功率放大和开关控制的半导体器件。它由金属氧化物半导体场效应晶体管(MOSFET)演变而来,具有高速度、低驱动电压、低输入电阻、低失真度等特点,因此在现代电子技术中得到了广泛的应用。
功率场效应晶体管的主要部分是由P型衬底、N型漂移层、P型沟道以及N型源和漏极组成。沟道区域上方有一层氧化物作为栅极绝缘层。当栅极施加正向电压时,在沟道区域形成一个近似恒定的P型沟道,使漏极和源极之间形成导通通道,从而控制功率场效应晶体管的导通和截止。功率场效应晶体管主要依靠栅源电压的变化来共同控制漏-源电路上的电流。