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射频场效应晶体管
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图片 | 型号 | 文档 | 类别 | 描述 | 品牌 | 供应商 | |
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2N7382 | ![]() |
功率场效应晶体管 | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN | ![]() |
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2N7389 | ![]() |
功率场效应晶体管 | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, MODIFIED TO-39, 3 PIN | ![]() |
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2N7389U | ![]() |
功率场效应晶体管 | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18 | ![]() |
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2N7394 | ![]() |
功率场效应晶体管 | Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | ![]() |
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2N7394U | ![]() |
功率场效应晶体管 | Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AC, TO-267AB, SMD-1, U-PKG- | ![]() |
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2N7580T1 | ![]() |
功率场效应晶体管 | Power Field-Effect Transistor, 45A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERA | ![]() |
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2N7604U2 | ![]() |
功率场效应晶体管 | Power Field-Effect Transistor, 56A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, | ![]() |
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2N7607T3 | ![]() |
功率场效应晶体管 | Power Field-Effect Transistor, 20A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAM | ![]() |
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2N7608T2 | ![]() |
功率场效应晶体管 | Power Field-Effect Transistor, 6A I(D), 100V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFI | ![]() |
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2N7609U8 | ![]() |
功率场效应晶体管 | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0 | ![]() |
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2N7610T2 | ![]() |
功率场效应晶体管 | Power Field-Effect Transistor, 3.3A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIE | ![]() |
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2N7614M1 | ![]() |
功率场效应晶体管 | Power Field-Effect Transistor, 0.8A I(D), 250V, 1.1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED PACKAG | ![]() |
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2N7622U2 | ![]() |
功率场效应晶体管 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) 抗辐射的逻辑电平功率MOSFET表面贴装( SMD - 2 ) |
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2N7624U3 | ![]() |
功率场效应晶体管 | Power Field-Effect Transistor, 22A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0. | ![]() |
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2SA2154CT | ![]() |
功率场效应晶体管 | General-Purpose Amplifier Applications 通用运算放大器应用 |
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2SJ115-O | ![]() |
功率场效应晶体管 | TRANSISTOR 8 A, 160 V, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | ![]() |
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2SJ115-Y | ![]() |
功率场效应晶体管 | TRANSISTOR 8 A, 160 V, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | ![]() |
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2SJ1151STR-E | ![]() |
功率场效应晶体管 | Silicon N Channel MOS FET 硅N沟道MOS FET |
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2SJ116 | ![]() |
功率场效应晶体管 | SILICON P-CHANNEL MOS FET 硅P沟道MOS场效应管 |
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2SJ123 | ![]() |
功率场效应晶体管 | TRANSISTOR 10 A, 70 V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | ![]() |
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2SJ127 | ![]() |
功率场效应晶体管 | 10A, 120V, 0.25ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | ![]() |
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2SJ128-Z | ![]() |
功率场效应晶体管 | Power Field-Effect Transistor, 2A I(D), 100V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MP-3, SC-63, 3 PIN | ![]() |
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2SJ128-Z | ![]() |
功率场效应晶体管 | 2A, 100V, 1ohm, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, MP-3, SC-63, 3 PIN | ![]() |
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2SJ128-Z-T1 | ![]() |
功率场效应晶体管 | Power Field-Effect Transistor, 2A I(D), 100V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MP-3, SC-63, 3 PIN | ![]() |
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2SJ130(L) | ![]() |
功率场效应晶体管 | 1A, 300V, P-CHANNEL, Si, POWER, MOSFET, DPAK-3 | ![]() |
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2SJ130(S) | ![]() |
功率场效应晶体管 | 1A, 300V, 8.5ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3 | ![]() |
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2SJ130(S)TR | ![]() |
功率场效应晶体管 | 1A, 300V, 8.5ohm, P-CHANNEL, Si, POWER, MOSFET | ![]() |
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2SJ130L | ![]() |
功率场效应晶体管 | Silicon P Channel MOS FET 硅P沟道MOS场效应晶体管 |
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2SJ130L-E | ![]() |
功率场效应晶体管 | Silicon P Channel MOS FET 硅P沟道MOS场效应晶体管 |
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2SJ130S | ![]() |
功率场效应晶体管 | Silicon P Channel MOS FET 硅P沟道MOS场效应晶体管 |
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功率场效应晶体管 热门型号
- 2SJ278MYTR
- 2SJ278MYTR
- 2SJ197-AZ
- 2SJ181(S)TR
- 2SJ527(L)
- 2SJ527(L)
- 2SJ484WYTL
- 2SJ484WYTL
- 2SJ451ZK-UR
- 2SJ451ZK-UR
- 2SJ399ZF-UR
- 2SJ244JYUL
- 2SJ451ZK-TR
- 2SJ244JYUL
- 2SJ244JY
- 2N6790TXV
- 2N6762TXV
- 2N6766TXV
- 2N6764TXV
- 2N60KL-TNS-T
- 2N60L-TF3T-T
- IRL3803VLTRRPBF
- FDS3890_NL
- TPIC1301DWR
- SFF60P05MUBTX
- 2SK1838(S)TR
- IRFY9130MEB
- IRFU110TU
- RFD14N05LSM_NL
- IRFR020TRLPBF
- APT30M85BNFR-BUTT
- ZXMP6A18DN8QTA
- APT8018L2VFRG
- NP80N055DLE-AZ
- IRHM4160U
- FDZ206P_NL
- ARF461C
- IXTA08N100D2HV
- IRF7NJZ44VPBF
- IRLU120NPBF
- PHB50N06T-T
- FQB17N08TM
- SHD2185S
- SIHF840LCSTR
- 2SK2995(F)
- IRF540FPBF
- EFC4612R-S-TR
- IRFS31N20DHR
- FDS7779Z_NL
- IRL610SU
- IPD60R450E6AT
- BUK565-60H-T
- UPA1707G-A
- APT94N60L2C3G
- IRFBC20STRRPBF
- IRF5M5210DPBF
- MTP7N20L
- NP40N055KLE-AZ
- IRHF7130PBF
- 2SK3353-Z-AZ
- MTP8N50EW
- FQA13N50CF_NL
- SIHF510STR
- IRHM54260PBF
- JANTXV2N7228D
- SPP06N60C3XK
- IRF7503TRPBF
- IRHM8130UPBF
- NTB4302T4G
- 2SK1838(L)
- IRFR420TRL
- IRFR420TRL
- IRFR9014TRRPBF
- IRFR9014TRRPBF
- 2SK2912S-E
- SFF240JRTXV
- APT6033BN-GULLWING
- SPP20N60C3XK
- 2SJ244JYTL
- 2SJ244JYTL
- IRFU9024NC
- APT1002R4BN-GULLWING
- IRHNA57264SESCS
- SFF450MUBS
- 2SK2957(S)TL
- 2SK2059(S)TL
- FQU4N50TU_WS
- IRFP9140NHR
- SFF40N30ZDBS
- FQP46N15-Q
- APT30M85BNFR-GULLWING
- APT30M85BNFR-GULLWING
- APT4018BN-GULLWING
- UPA1556AH-AZ
- HAT1024REL
- IRFR120ZTRRPBF
- BUK583-60ATRL
- SPU07N60S5XK
- IRFB3207HR
- IRFY9140MEPBF
什么是功率场效应晶体管
- 功率场效应晶体管(Power MOSFET)是一种广泛应用于功率放大和开关控制的半导体器件。它由金属氧化物半导体场效应晶体管(MOSFET)演变而来,具有高速度、低驱动电压、低输入电阻、低失真度等特点,因此在现代电子技术中得到了广泛的应用。
功率场效应晶体管的主要部分是由P型衬底、N型漂移层、P型沟道以及N型源和漏极组成。沟道区域上方有一层氧化物作为栅极绝缘层。当栅极施加正向电压时,在沟道区域形成一个近似恒定的P型沟道,使漏极和源极之间形成导通通道,从而控制功率场效应晶体管的导通和截止。功率场效应晶体管主要依靠栅源电压的变化来共同控制漏-源电路上的电流。