功率场效应晶体管
图片 型号 文档 类别 描述 品牌 供应商
2N7382 功率场效应晶体管 Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN
2N7389 功率场效应晶体管 Power Field-Effect Transistor, 6.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, MODIFIED TO-39, 3 PIN
2N7389U 功率场效应晶体管 Power Field-Effect Transistor, 6.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18
2N7394 功率场效应晶体管 Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN
2N7394U 功率场效应晶体管 Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AC, TO-267AB, SMD-1, U-PKG-
2N7580T1 功率场效应晶体管 Power Field-Effect Transistor, 45A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERA
2N7604U2 功率场效应晶体管 Power Field-Effect Transistor, 56A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2,
2N7607T3 功率场效应晶体管 Power Field-Effect Transistor, 20A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAM
2N7608T2 功率场效应晶体管 Power Field-Effect Transistor, 6A I(D), 100V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFI
2N7609U8 功率场效应晶体管 Power Field-Effect Transistor, 6.5A I(D), 100V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0
2N7610T2 功率场效应晶体管 Power Field-Effect Transistor, 3.3A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIE
2N7614M1 功率场效应晶体管 Power Field-Effect Transistor, 0.8A I(D), 250V, 1.1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED PACKAG
2N7622U2 功率场效应晶体管 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)
抗辐射的逻辑电平功率MOSFET表面贴装( SMD - 2 )
2N7624U3 功率场效应晶体管 Power Field-Effect Transistor, 22A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.
2SA2154CT 功率场效应晶体管 General-Purpose Amplifier Applications
通用运算放大器应用
2SJ115-O 功率场效应晶体管 TRANSISTOR 8 A, 160 V, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
2SJ115-Y 功率场效应晶体管 TRANSISTOR 8 A, 160 V, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
2SJ1151STR-E 功率场效应晶体管 Silicon N Channel MOS FET
硅N沟道MOS FET
2SJ116 功率场效应晶体管 SILICON P-CHANNEL MOS FET
硅P沟道MOS场效应管
2SJ123 功率场效应晶体管 TRANSISTOR 10 A, 70 V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
2SJ127 功率场效应晶体管 10A, 120V, 0.25ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SJ128-Z 功率场效应晶体管 Power Field-Effect Transistor, 2A I(D), 100V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MP-3, SC-63, 3 PIN
2SJ128-Z 功率场效应晶体管 2A, 100V, 1ohm, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, MP-3, SC-63, 3 PIN
2SJ128-Z-T1 功率场效应晶体管 Power Field-Effect Transistor, 2A I(D), 100V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MP-3, SC-63, 3 PIN
2SJ130(L) 功率场效应晶体管 1A, 300V, P-CHANNEL, Si, POWER, MOSFET, DPAK-3
2SJ130(S) 功率场效应晶体管 1A, 300V, 8.5ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3
2SJ130(S)TR 功率场效应晶体管 1A, 300V, 8.5ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ130L 功率场效应晶体管 Silicon P Channel MOS FET
硅P沟道MOS场效应晶体管
2SJ130L-E 功率场效应晶体管 Silicon P Channel MOS FET
硅P沟道MOS场效应晶体管
2SJ130S 功率场效应晶体管 Silicon P Channel MOS FET
硅P沟道MOS场效应晶体管
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什么是功率场效应晶体管

    功率场效应晶体管(Power MOSFET)是一种广泛应用于功率放大和开关控制的半导体器件。它由金属氧化物半导体场效应晶体管(MOSFET)演变而来,具有高速度、低驱动电压、低输入电阻、低失真度等特点,因此在现代电子技术中得到了广泛的应用。 功率场效应晶体管的主要部分是由P型衬底、N型漂移层、P型沟道以及N型源和漏极组成。沟道区域上方有一层氧化物作为栅极绝缘层。当栅极施加正向电压时,在沟道区域形成一个近似恒定的P型沟道,使漏极和源极之间形成导通通道,从而控制功率场效应晶体管的导通和截止。功率场效应晶体管主要依靠栅源电压的变化来共同控制漏-源电路上的电流。